Feng Dai

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San Jose, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Trench-based capacitor for integrated circuits
- Patent number 7,166,902
- Issue date Jan 23, 2007
- Cypress Semiconductor Corporation
- Fuad Badrieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-filled via structure with barrier layer
- Patent number 6,977,217
- Issue date Dec 20, 2005
- Cypress Semiconductor Corporation
- Mira Ben-Tzur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve STI planarization
- Patent number 6,869,857
- Issue date Mar 22, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Feng Dai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Novel method to achieve STI planarization
- Publication number 20030104676
- Publication date Jun 5, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Feng Dai
- H01 - BASIC ELECTRIC ELEMENTS