Feng Huang

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Jiangsu, CN

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Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused metal oxide semiconductor field-effect transisto...
- Patent number 10,290,705
- Issue date May 14, 2019
- CSMC Technologies Fab2 Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing laterally insulated-gate bipolar transistor
- Patent number 9,865,702
- Issue date Jan 9, 2018
- CSMC Technologies Fab2 Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused metal oxide semiconductor field-effect tran...
- Patent number 9,716,169
- Issue date Jul 25, 2017
- CSMC Technologies Fabi Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTO...
- Publication number 20180130877
- Publication date May 10, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Feng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING LATERALLY INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20170358657
- Publication date Dec 14, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Feng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRAN...
- Publication number 20160372591
- Publication date Dec 22, 2016
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS