Feng Miao

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-reliability high-speed memristor
- Patent number 9,478,738
- Issue date Oct 25, 2016
- Hewlett Packard Enterprise Development LP
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristor with channel region in thermal equilibrium with containin...
- Patent number 9,276,204
- Issue date Mar 1, 2016
- Hewlett Packard Enterprise Development LP
- Feng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristors having mixed oxide phases
- Patent number 9,257,645
- Issue date Feb 9, 2016
- Hewlett Packard Enterprise Development LP
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
High-reliability high-speed memristor
- Patent number 9,165,645
- Issue date Oct 20, 2015
- Hewlett-Packard Development Company, L.P.
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory cell with continuously tunable switching
- Patent number 8,923,034
- Issue date Dec 30, 2014
- Hewlett-Packard Development Company, L.P.
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory cell with continuously tunable switching
- Patent number 8,830,727
- Issue date Sep 9, 2014
- Hewlett-Packard Development Company, L.P.
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memristive device
- Patent number 8,546,785
- Issue date Oct 1, 2013
- Hewlett-Packard Development Company, L.P.
- Jianhua Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Changing a memristor state
- Patent number 8,331,131
- Issue date Dec 11, 2012
- Hewlett-Packard Development Company, L.P.
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Grant
Graphene memristor having modulated graphene interlayer conduction
- Patent number 8,294,132
- Issue date Oct 23, 2012
- Hewlett-Packard Development Company, L.P.
- Feng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defective graphene-based memristor
- Patent number 8,203,171
- Issue date Jun 19, 2012
- Hewlett-Packard Development Company, L.P.
- Joshua Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
- Publication number 20150380643
- Publication date Dec 31, 2015
- Hewlett-Packard Development Company, L.P.
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMORY CELL WITH CONTINUOUSLY TUNABLE SWITCHING
- Publication number 20140355331
- Publication date Dec 4, 2014
- Hewlett-Packard Development Company, L.P.
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Application
Memristor with Channel Region in Thermal Equilibrium with Containin...
- Publication number 20140346426
- Publication date Nov 27, 2014
- Feng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTORS HAVING MIXED OXIDE PHASES
- Publication number 20140167042
- Publication date Jun 19, 2014
- Jianhua Yang
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
- Publication number 20140112059
- Publication date Apr 24, 2014
- Feng Miao
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MEMORY CELL WITH CONTINUOUSLY TUNABLE SWITCHING
- Publication number 20130100726
- Publication date Apr 25, 2013
- Wei Yi
- G11 - INFORMATION STORAGE
Information Patent Application
CHANGING A MEMRISTOR STATE
- Publication number 20120195099
- Publication date Aug 2, 2012
- Feng MIAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMRISTIVE DEVICE
- Publication number 20110240951
- Publication date Oct 6, 2011
- Jianhua Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Graphene Memristor Having Modulated Graphene Interlayer Conduction
- Publication number 20110240946
- Publication date Oct 6, 2011
- Feng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defective Graphene-Based Memristor
- Publication number 20110240947
- Publication date Oct 6, 2011
- Joshua Yang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High-reliability high-speed memristor

Memristor with channel region in thermal equilibrium with containin...

Memristors having mixed oxide phases

High-reliability high-speed memristor

Multi-level memory cell with continuously tunable switching

Multi-level memory cell with continuously tunable switching

Memristive device

Changing a memristor state

Graphene memristor having modulated graphene interlayer conduction

Defective graphene-based memristor

Patents Applicationslast 30 patents

HIGH-RELIABILITY HIGH-SPEED MEMRISTOR

MULTI-LEVEL MEMORY CELL WITH CONTINUOUSLY TUNABLE SWITCHING

Memristor with Channel Region in Thermal Equilibrium with Containin...

MEMRISTORS HAVING MIXED OXIDE PHASES

HIGH-RELIABILITY HIGH-SPEED MEMRISTOR

MULTI-LEVEL MEMORY CELL WITH CONTINUOUSLY TUNABLE SWITCHING

CHANGING A MEMRISTOR STATE

MEMRISTIVE DEVICE

Graphene Memristor Having Modulated Graphene Interlayer Conduction

Defective Graphene-Based Memristor