Feng-Sheng Chu

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epitaxial structures in fin-like field effect tr...
- Patent number 12,068,204
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device active region profile and method of forming th...
- Patent number 12,027,626
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with backsid...
- Patent number 12,015,060
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,937,426
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
Information Patent Grant
Method for forming different types of devices
- Patent number 11,917,803
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming the same
- Patent number 11,908,748
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with gate-all-around devices and stacked Fi...
- Patent number 11,901,236
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of semiconductor device fabrication including growing epita...
- Patent number 11,862,712
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,854,688
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming epitaxial structures in fin-like field effect tr...
- Patent number 11,810,825
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a FinFET by forming a hollow area in the e...
- Patent number 11,769,820
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain feature with enlarged lower section interfac...
- Patent number 11,631,736
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device active region profile and method of forming th...
- Patent number 11,575,047
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with cap layer
- Patent number 11,569,386
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut EPI process and structures
- Patent number 11,515,211
- Issue date Nov 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming different types of devices
- Patent number 11,508,736
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming the same
- Patent number 11,502,005
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with gate-all-around devices and stacked Fi...
- Patent number 11,328,960
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with an etch stop layer
- Patent number 11,217,490
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epitaxial structures in fin-like field effect tr...
- Patent number 11,107,735
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with source/drain barrier
- Patent number 11,088,245
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,991,630
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with cap layer
- Patent number 10,879,395
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 10,867,861
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with source/drain barrier
- Patent number 10,756,171
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with an etch stop layer
- Patent number 10,748,820
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with an etch stop layer
- Patent number 10,522,420
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet semiconductor device structure with capped source drain stru...
- Patent number 10,522,680
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epitaxial structures in fin-like field effect tr...
- Patent number 10,497,628
- Issue date Dec 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387028
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Epitaxial Features
- Publication number 20240387739
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20240363754
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TR...
- Publication number 20240363438
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT
- Publication number 20240339510
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...
- Publication number 20240339541
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DIFFERENT TYPES OF DEVICES
- Publication number 20240251539
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240194537
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...
- Publication number 20240186187
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER
- Publication number 20240178271
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230389320
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
Information Patent Application
METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TR...
- Publication number 20230377987
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source/Drain for Backside Source Contact
- Publication number 20230378290
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE/DRAIN FEATURE WITH ENLARGED LOWER SECTION INTERFAC...
- Publication number 20230253450
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Active Region Profile and Method of Forming th...
- Publication number 20230117516
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20230119318
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Forming the Same
- Publication number 20230084821
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND RELATED METHODS
- Publication number 20230063984
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230024339
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH BACKSID...
- Publication number 20220416035
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES
- Publication number 20220384654
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...
- Publication number 20220367720
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT EPI PROCESS AND STRUCTURES
- Publication number 20220367277
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source/Drain for Backside Source Contact
- Publication number 20220359676
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220359066
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES
- Publication number 20220352353
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DIFFERENT TYPES OF DEVICES
- Publication number 20220344352
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...
- Publication number 20220262683
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223618
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...
- Publication number 20220093591
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS

Feng-Sheng Chu

Person

Patents Grantslast 30 patents

Semiconductor device structure with cap layer

Methods of forming epitaxial structures in fin-like field effect tr...

Semiconductor device active region profile and method of forming th...

Structure and formation method of semiconductor device with backsid...

Memory device and manufacturing method thereof

Method for forming different types of devices

Semiconductor devices and methods of forming the same

Semiconductor structure with gate-all-around devices and stacked Fi...

Methods of semiconductor device fabrication including growing epita...

Semiconductor device and method

Methods of forming epitaxial structures in fin-like field effect tr...

Methods of manufacturing a FinFET by forming a hollow area in the e...

Epitaxial source/drain feature with enlarged lower section interfac...

Semiconductor device active region profile and method of forming th...

Method for forming semiconductor device structure with cap layer

Cut EPI process and structures

Method for forming different types of devices

Semiconductor devices and methods of forming the same

Semiconductor structure with gate-all-around devices and stacked Fi...

Source/drain features with an etch stop layer

Methods of forming epitaxial structures in fin-like field effect tr...

Integrated circuit device with source/drain barrier

Semiconductor device and method

Method for forming semiconductor device structure with cap layer

Fin field-effect transistor device and method of forming the same

Integrated circuit device with source/drain barrier

Source/drain features with an etch stop layer

Source/drain features with an etch stop layer

Finfet semiconductor device structure with capped source drain stru...

Methods of forming epitaxial structures in fin-like field effect tr...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD

Epitaxial Features

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TR...

SEMICONDUCTOR DEVICE STRUCTURE WITH BACKSIDE CONTACT

SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...

METHOD FOR FORMING DIFFERENT TYPES OF DEVICES

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...

INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING EPITAXIAL STRUCTURES IN FIN-LIKE FIELD EFFECT TR...

Asymmetric Source/Drain for Backside Source Contact

EPITAXIAL SOURCE/DRAIN FEATURE WITH ENLARGED LOWER SECTION INTERFAC...

Semiconductor Device Active Region Profile and Method of Forming th...

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

Semiconductor Devices and Methods of Forming the Same

SEMICONDUCTOR STRUCTURE AND RELATED METHODS

SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH BACKSID...

EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...

CUT EPI PROCESS AND STRUCTURES

Asymmetric Source/Drain for Backside Source Contact

Semiconductor Device and Method

EPITAXIAL FEATURES OF SEMICONDUCTOR DEVICES

METHOD FOR FORMING DIFFERENT TYPES OF DEVICES

SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE WITH GATE-ALL-AROUND DEVICES AND STACKED FI...