Fengliang Xue

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for erasing a ReRAM memory cell
- Patent number 11,355,187
- Issue date Jun 7, 2022
- Microchip Technology Inc.
- Victor Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SEU stabilized memory cells
- Patent number 11,031,078
- Issue date Jun 8, 2021
- MICROSEMI SOC CORP.
- Fengliang Xue
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
ReRAM memory cell having dual word line control
- Patent number 10,910,050
- Issue date Feb 2, 2021
- Microchip Technology Inc.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
ReRAM programming method including low-current pre-programming for...
- Patent number 10,872,661
- Issue date Dec 22, 2020
- Microchip Technology Inc.
- Fengliang Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage device fabricated using low-voltage processes
- Patent number 9,755,072
- Issue date Sep 5, 2017
- Microsemi SoC Corporation
- Fengliang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device fabricated using low-voltage processes
- Patent number 9,368,623
- Issue date Jun 14, 2016
- Microsemi SoC Corporation
- Fengliang Xue
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ReRAM Memory Array
- Publication number 20220262434
- Publication date Aug 18, 2022
- Microchip Technology Inc.
- Victor Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM MEMORY CELL HAVING DUAL WORD LINE CONTROL AND METHOD FOR ERAS...
- Publication number 20210125666
- Publication date Apr 29, 2021
- Microchip Technology Inc.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
ReRAM MEMORY CELL HAVING DUAL WORD LINE CONTROL
- Publication number 20200327937
- Publication date Oct 15, 2020
- Microchip Technology Inc.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
RERAM PROGRAMMING METHOD INCLUDING LOW-CURRENT PRE-PROGRAMMING FOR...
- Publication number 20200327938
- Publication date Oct 15, 2020
- Microchip Technology Inc.
- Fengliang Xue
- G11 - INFORMATION STORAGE
Information Patent Application
SEU STABILIZED MEMORY CELLS
- Publication number 20200286559
- Publication date Sep 10, 2020
- Microsemi SoC Corp.
- Fengliang Xue
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH VOLTAGE DEVICE FABRICATED USING LOW-VOLTAGE PROCESSES
- Publication number 20160204223
- Publication date Jul 14, 2016
- Microsemi SoC Corporation
- Fengliang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE FABRICATED USING LOW-VOLTAGE PROCESSES
- Publication number 20150137233
- Publication date May 21, 2015
- Microsemi SoC Corporation
- Fengliang Xue
- H01 - BASIC ELECTRIC ELEMENTS

Fengliang Xue

Person

Patents Grantslast 30 patents

Method for erasing a ReRAM memory cell

SEU stabilized memory cells

ReRAM memory cell having dual word line control

ReRAM programming method including low-current pre-programming for...

High voltage device fabricated using low-voltage processes

High voltage device fabricated using low-voltage processes

Patents Applicationslast 30 patents

ReRAM Memory Array

ReRAM MEMORY CELL HAVING DUAL WORD LINE CONTROL AND METHOD FOR ERAS...

ReRAM MEMORY CELL HAVING DUAL WORD LINE CONTROL

RERAM PROGRAMMING METHOD INCLUDING LOW-CURRENT PRE-PROGRAMMING FOR...

SEU STABILIZED MEMORY CELLS

HIGH VOLTAGE DEVICE FABRICATED USING LOW-VOLTAGE PROCESSES

HIGH VOLTAGE DEVICE FABRICATED USING LOW-VOLTAGE PROCESSES