Fengqin ZHANG

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Readout circuit structure
- Patent number 12,119,047
- Issue date Oct 15, 2024
- CHANXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Control circuit, method for reading and writing and memory
- Patent number 12,080,340
- Issue date Sep 3, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Column select signal cell circuit, bit line sense circuit and memory
- Patent number 12,027,201
- Issue date Jul 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit for memory
- Patent number 11,900,991
- Issue date Feb 13, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Weibing Shang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line sense circuit and memory
- Patent number 11,862,239
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory for implementing at least one of reading or writing command
- Patent number 11,676,642
- Issue date Jun 13, 2023
- Changxin Memory Technologies, Inc.
- Weibing Shang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DATA STORAGE CIRCUIT AND CONTROL METHOD THEREOF, AND STORAGE APPARATUS
- Publication number 20230178119
- Publication date Jun 8, 2023
- Changxin Memory Technologies, Inc.
- Weibing SHANG
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DRIVER, WORD LINE DRIVER ARRAY, AND SEMICONDUCTOR STRUCTURE
- Publication number 20230143797
- Publication date May 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MEMORY
- Publication number 20230015073
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Minghao LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PROCESSOR
- Publication number 20230013413
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Minghao LI
- G11 - INFORMATION STORAGE
Information Patent Application
READOUT CIRCUIT STRUCTURE
- Publication number 20230005522
- Publication date Jan 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL CIRCUIT, METHOD FOR READING AND WRITING AND MEMORY
- Publication number 20230005523
- Publication date Jan 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
COLUMN SELECT SIGNAL CELL CIRCUIT, BIT LINE SENSE CIRCUIT AND MEMORY
- Publication number 20220277785
- Publication date Sep 1, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20220139447
- Publication date May 5, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Weibing SHANG
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE SENSE CIRCUIT AND MEMORY
- Publication number 20220093164
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY
- Publication number 20220059137
- Publication date Feb 24, 2022
- Changxin Memory Technologies, Inc.
- Weibing SHANG
- G11 - INFORMATION STORAGE

Fengqin ZHANG

Person

Patents Grantslast 30 patents

Readout circuit structure

Control circuit, method for reading and writing and memory

Column select signal cell circuit, bit line sense circuit and memory

Integrated circuit for memory

Bit line sense circuit and memory

Memory for implementing at least one of reading or writing command

Patents Applicationslast 30 patents

DATA STORAGE CIRCUIT AND CONTROL METHOD THEREOF, AND STORAGE APPARATUS

WORD LINE DRIVER, WORD LINE DRIVER ARRAY, AND SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND MEMORY

SEMICONDUCTOR STRUCTURE AND PROCESSOR

READOUT CIRCUIT STRUCTURE

CONTROL CIRCUIT, METHOD FOR READING AND WRITING AND MEMORY

COLUMN SELECT SIGNAL CELL CIRCUIT, BIT LINE SENSE CIRCUIT AND MEMORY

INTEGRATED CIRCUIT

BIT LINE SENSE CIRCUIT AND MEMORY

MEMORY