Ferdinand Scholz

Person

Stuttgart, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,883,191
- Issue date Jan 5, 2021
- Freiberger Compound Materials GmbH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,309,037
- Issue date Jun 4, 2019
- Freiberger Compound Materials GMBH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the manufacture of a doped III-N bulk crystal and a fre...
- Patent number 9,461,121
- Issue date Oct 4, 2016
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 9,115,444
- Issue date Aug 25, 2015
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for the manufacture of a doped III-N bulk crystal and a fre...
- Patent number 8,778,078
- Issue date Jul 15, 2014
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semipolar semiconductor crystal and method for manufacturing the same
- Patent number 8,536,030
- Issue date Sep 17, 2013
- Freiberger Compund Materials GmbH
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 7,998,273
- Issue date Aug 16, 2011
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for selective masking of III-N layers and for the preparati...
- Patent number 7,727,332
- Issue date Jun 1, 2010
- Freiberger Compound Materials GmbH
- Frank Habel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation-emitting semiconductor component and method for making same
- Patent number 7,005,681
- Issue date Feb 28, 2006
- Osram Opto Semiconductors GmbH
- Stefan Bader
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...
- Publication number 20190276950
- Publication date Sep 12, 2019
- FREIBERGER COMPOUND MATERIALS GMBH
- Frank LIPSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...
- Publication number 20150050471
- Publication date Feb 19, 2015
- FREIBERGER COMPOUND MATERIALS GMBH
- Frank Lipski
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...
- Publication number 20140151716
- Publication date Jun 5, 2014
- FREIBERGER COMPOUND MATERIALS GMBH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMIPOLAR SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110227198
- Publication date Sep 22, 2011
- FREIBERGER COMPOUND MATERIALS GMBH
- Thomas WUNDERER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...
- Publication number 20110018106
- Publication date Jan 27, 2011
- FREIBERGER COMPOUND MATERIALS GmbH
- Ferdinand SCHOLZ
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS
- Publication number 20080203409
- Publication date Aug 28, 2008
- Freiberger Compound Materials GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing III-N Layers, and III-N Layers or III-N Substr...
- Publication number 20080166522
- Publication date Jul 10, 2008
- FREIBERGER COMPOUND MATERIALS GMBH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...
- Publication number 20080083910
- Publication date Apr 10, 2008
- FREIBERGER COMPOUND MATERIALS GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATI...
- Publication number 20070163490
- Publication date Jul 19, 2007
- FREIBERGER COMPOUND MATERIALS GmbH
- Frank Habel
- C30 - CRYSTAL GROWTH
Information Patent Application
Radiation-emitting optoelectronic component with a quantum well str...
- Publication number 20060060833
- Publication date Mar 23, 2006
- Osram Opto Semiconductors GmbH
- Peter Bruckner
- B82 - NANO-TECHNOLOGY
Information Patent Application
Radiation-emitting semiconductor component and method for making same
- Publication number 20040259299
- Publication date Dec 23, 2004
- Stefan Bader
- H01 - BASIC ELECTRIC ELEMENTS

Ferdinand Scholz

Person

Patents Grantslast 30 patents

Method for producing III-N templates and the reprocessing thereof a...

Method for producing III-N templates and the reprocessing thereof a...

Process for the manufacture of a doped III-N bulk crystal and a fre...

Method for producing III-N layers, and III-N layers or III-N substr...

Process for the manufacture of a doped III-N bulk crystal and a fre...

Semipolar semiconductor crystal and method for manufacturing the same

Method for producing III-N layers, and III-N layers or III-N substr...

Process for selective masking of III-N layers and for the preparati...

Radiation-emitting semiconductor component and method for making same

Patents Applicationslast 30 patents

METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...

METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...

PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...

SEMIPOLAR SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...

PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS

Method for Producing III-N Layers, and III-N Layers or III-N Substr...

PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...

PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATI...

Radiation-emitting optoelectronic component with a quantum well str...

Radiation-emitting semiconductor component and method for making same