Francesco Bonoli

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Novara, IT

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Patents Grantslast 30 patents

Information Patent Grant
Process for preparing single crystal silicon having improved gate o...
- Patent number 7,431,765
- Issue date Oct 7, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal silicon having improved gate oxide integrity
- Patent number 6,986,925
- Issue date Jan 17, 2006
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY
- Publication number 20090022930
- Publication date Jan 22, 2009
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for preparing single crystal silicon having improved gate o...
- Publication number 20050160967
- Publication date Jul 28, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH