Francois H. Fabreguette

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic devices comprising adjoining oxide materials and related...
- Patent number 11,672,118
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having charge-trapping material arranged in v...
- Patent number 11,672,120
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Byeung Chui Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies having vertically-extending channel material...
- Patent number 11,631,697
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Shyam Surthi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 11,557,608
- Issue date Jan 17, 2023
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-extending channel material...
- Patent number 11,289,501
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with multidielectric spacers on conductive regions of sta...
- Patent number 11,127,830
- Issue date Sep 21, 2021
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 11,107,830
- Issue date Aug 31, 2021
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having charge-trapping material arranged in v...
- Patent number 11,037,956
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of an atomic layer of germanium in an opening of a substr...
- Patent number 10,964,536
- Issue date Mar 30, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping a silicon-containing material and methods of form...
- Patent number 10,937,654
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having charge-trapping material arranged in v...
- Patent number 10,777,576
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Byeung Chul Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...
- Publication number 20240130124
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Shyam Surthi
Information Patent Application
Integrated Assemblies Having Charge-Trapping Material Arranged in V...
- Publication number 20230262981
- Publication date Aug 17, 2023
- Micron Technology, Inc.
- Byeung Chul Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Having Vertically-Extending Channel Material...
- Publication number 20220173123
- Publication date Jun 2, 2022
- Micron Technology, Inc.
- Shyam Surthi
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...
- Publication number 20220077176
- Publication date Mar 10, 2022
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED MEM...
- Publication number 20220051980
- Publication date Feb 17, 2022
- Micro Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...
- Publication number 20220005930
- Publication date Jan 6, 2022
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Vertically-Spaced Channel Material Seg...
- Publication number 20210366927
- Publication date Nov 25, 2021
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Charge-Trapping Material Arranged in V...
- Publication number 20210327898
- Publication date Oct 21, 2021
- Micron Technology, Inc.
- Byeung Chul Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Having Vertically-Spaced Channel Material Seg...
- Publication number 20210057436
- Publication date Feb 25, 2021
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Vertically-Extending Channel Material...
- Publication number 20200373322
- Publication date Nov 26, 2020
- Micron Technology, Inc.
- Shyam Surthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Charge-Trapping Material Arranged in V...
- Publication number 20200373325
- Publication date Nov 26, 2020
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Charge-Trapping Material Arranged in V...
- Publication number 20200321351
- Publication date Oct 8, 2020
- Micron Technology, Inc.
- Byeung Chul Kim
- G11 - INFORMATION STORAGE
Information Patent Application
FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL
- Publication number 20200251334
- Publication date Aug 6, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...
- Publication number 20200243339
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...
- Publication number 20200235005
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS

Francois H. Fabreguette

Person

Patents Grantslast 30 patents

Electronic devices comprising adjoining oxide materials and related...

Integrated assemblies having charge-trapping material arranged in v...

Integrated assemblies having vertically-extending channel material...

Integrated assemblies having vertically-spaced channel material seg...

Integrated assemblies having vertically-extending channel material...

Apparatus with multidielectric spacers on conductive regions of sta...

Integrated assemblies having vertically-spaced channel material seg...

Integrated assemblies having charge-trapping material arranged in v...

Formation of an atomic layer of germanium in an opening of a substr...

Methods of doping a silicon-containing material and methods of form...

Integrated assemblies having charge-trapping material arranged in v...

Patents Applicationslast 30 patents

ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...

Integrated Assemblies Having Charge-Trapping Material Arranged in V...

Integrated Assemblies Having Vertically-Extending Channel Material...

ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED...

MICROELECTRONIC DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED MEM...

APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...

Integrated Assemblies Having Vertically-Spaced Channel Material Seg...

Integrated Assemblies Having Charge-Trapping Material Arranged in V...

Integrated Assemblies Having Vertically-Spaced Channel Material Seg...

Integrated Assemblies Having Vertically-Extending Channel Material...

Integrated Assemblies Having Charge-Trapping Material Arranged in V...

Integrated Assemblies Having Charge-Trapping Material Arranged in V...

FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL

METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...

APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...