Francois Neuilly

Person

Colomby-Sur-Thaon, FR

People

Patents Grantslast 30 patents

Information Patent Grant
SONOS memory device with reduced short-channel effects
- Patent number 8,525,250
- Issue date Sep 3, 2013
- NXP B.V.
- Robertus T. F. Van Schaijk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ultra high density capacity comprising pillar-shaped capacitors for...
- Patent number 8,227,847
- Issue date Jul 24, 2012
- NXP B.V.
- Francois Neuilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor
- Patent number 8,026,146
- Issue date Sep 27, 2011
- NXP B.V.
- Johannes J. T. M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having a second, base-comprising region consisti...
- Patent number 7,932,156
- Issue date Apr 26, 2011
- NXP B.V.
- Johannes J. T. M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method of fabricating the same
- Patent number 7,906,403
- Issue date Mar 15, 2011
- NXP B.V.
- Johannes JTM Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for making the same
- Patent number 7,786,014
- Issue date Aug 31, 2010
- IPDIA
- Francois Neuilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor
- Patent number 7,605,027
- Issue date Oct 20, 2009
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THERMO-MECHANICAL STRESS IN SEMICONDUCTOR WAFERS
- Publication number 20110101531
- Publication date May 5, 2011
- NXP B.V.
- Francois Neuilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FOR...
- Publication number 20110001217
- Publication date Jan 6, 2011
- NXP B.V.
- Francois Neuilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR
- Publication number 20100022056
- Publication date Jan 28, 2010
- NXP, B.V.
- Johannes J. T. M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20090269931
- Publication date Oct 29, 2009
- NXP, B.V.
- Francois Neuilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20090200577
- Publication date Aug 13, 2009
- NXP B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20090174034
- Publication date Jul 9, 2009
- NXP B.V.
- Johannes J., T., M. Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sonos Memory Device With Reduced Short-Channel Effects
- Publication number 20080272427
- Publication date Nov 6, 2008
- NXP B.V.
- Robertus T.F. Van Schaijk
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Fabricating a Bipolar Transistor
- Publication number 20080233688
- Publication date Sep 25, 2008
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS

Francois Neuilly

Person

Patents Grantslast 30 patents

SONOS memory device with reduced short-channel effects

Ultra high density capacity comprising pillar-shaped capacitors for...

Method of manufacturing a bipolar transistor

Bipolar transistor having a second, base-comprising region consisti...

Bipolar transistor and method of fabricating the same

Electronic device and method for making the same

Method of fabricating a bipolar transistor

Patents Applicationslast 30 patents

THERMO-MECHANICAL STRESS IN SEMICONDUCTOR WAFERS

ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FOR...

METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR

ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

Sonos Memory Device With Reduced Short-Channel Effects

Method of Fabricating a Bipolar Transistor