Frank Bin Yang

Person

Mahwah, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a transistor device having asymmetric embed...
- Patent number 8,293,609
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting gate stacks during fabrication of semiconduc...
- Patent number 8,217,463
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 8,193,592
- Issue date Jun 5, 2012
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Transistor device having asymmetric embedded strain elements and re...
- Patent number 8,148,750
- Issue date Apr 3, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded silicon germanium source drain structure with reduced sili...
- Patent number 8,120,120
- Issue date Feb 21, 2012
- GLOBALFOUNDRIES Inc.
- Frank (Bin) Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating MOS devices having highly stressed channels
- Patent number 8,076,209
- Issue date Dec 13, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor devices having doped silicon-compromising...
- Patent number 8,026,539
- Issue date Sep 27, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having faceted silicide contacts, and related...
- Patent number 7,994,014
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having V-shaped embedded stressor
- Patent number 7,989,298
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor transistor with reduced gate height, and...
- Patent number 7,960,229
- Issue date Jun 14, 2011
- GLOBALFOUNDRIES Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having asymmetric embedded strain elements and re...
- Patent number 7,939,852
- Issue date May 10, 2011
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting gate stacks during fabrication of semiconduc...
- Patent number 7,932,143
- Issue date Apr 26, 2011
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with asymmetrical extension implant
- Patent number 7,829,401
- Issue date Nov 9, 2010
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods for fabricating MOS devices having highly stressed channels
- Patent number 7,767,534
- Issue date Aug 3, 2010
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating MOS devices having epitaxially grown stress...
- Patent number 7,670,934
- Issue date Mar 2, 2010
- GlobalFoundries Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stepped recesses for embedded strain elements in...
- Patent number 7,632,727
- Issue date Dec 15, 2009
- GlobalFoundries Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a stress enhanced semiconductor device havi...
- Patent number 7,521,380
- Issue date Apr 21, 2009
- Advanced Micro Devices, Inc.
- Andrew M. Waite
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...
- Publication number 20120129311
- Publication date May 24, 2012
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...
- Publication number 20110204446
- Publication date Aug 25, 2011
- GLOBALFOUNDRIES INC.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR
- Publication number 20110183486
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...
- Publication number 20110169073
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110121397
- Publication date May 26, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110095341
- Publication date Apr 28, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SIL...
- Publication number 20110062498
- Publication date Mar 17, 2011
- Frank (Bin) Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20110024841
- Publication date Feb 3, 2011
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS
- Publication number 20100210084
- Publication date Aug 19, 2010
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide semiconductor devices having doped silicon-compromising...
- Publication number 20100207176
- Publication date Aug 19, 2010
- Advanced Micro Devices, Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING FACETED SILICIDE CONTACTS, AND RELATED...
- Publication number 20100090289
- Publication date Apr 15, 2010
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS
- Publication number 20100081245
- Publication date Apr 1, 2010
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...
- Publication number 20100012975
- Publication date Jan 21, 2010
- Advanced Micro Devices, Inc.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES HAVING IMPLANTED CARBON DIFFUSION...
- Publication number 20100012988
- Publication date Jan 21, 2010
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
- Publication number 20090283806
- Publication date Nov 19, 2009
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STEPPED RECESSES FOR EMBEDDED STRAIN ELEMENTS IN...
- Publication number 20090280627
- Publication date Nov 12, 2009
- Advanced Micro Devices, Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...
- Publication number 20090256201
- Publication date Oct 15, 2009
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS HAVING HIGH-K OFFSET SPACERS THAT REDUCE EXTERNAL R...
- Publication number 20080258225
- Publication date Oct 23, 2008
- Advanced Micro Devices, Inc.
- Frank (Bin) YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING A STRESS ENHANCED SEMICONDUCTOR DEVICE HAVI...
- Publication number 20080261408
- Publication date Oct 23, 2008
- Advanced Micro Devices, Inc.
- Andrew M. WAITE
- H01 - BASIC ELECTRIC ELEMENTS

Frank Bin Yang

Person

Patents Grantslast 30 patents

Method of manufacturing a transistor device having asymmetric embed...

Methods for protecting gate stacks during fabrication of semiconduc...

MOSFET with asymmetrical extension implant

Transistor device having asymmetric embedded strain elements and re...

Embedded silicon germanium source drain structure with reduced sili...

Methods for fabricating MOS devices having highly stressed channels

Metal oxide semiconductor devices having doped silicon-compromising...

Semiconductor devices having faceted silicide contacts, and related...

Transistor having V-shaped embedded stressor

Metal oxide semiconductor transistor with reduced gate height, and...

Transistor device having asymmetric embedded strain elements and re...

Methods for protecting gate stacks during fabrication of semiconduc...

MOSFET with asymmetrical extension implant

Methods for fabricating MOS devices having highly stressed channels

Methods for fabricating MOS devices having epitaxially grown stress...

Method of forming stepped recesses for embedded strain elements in...

Methods for fabricating a stress enhanced semiconductor device havi...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...

METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...

TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR

TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SIL...

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS

Metal oxide semiconductor devices having doped silicon-compromising...

SEMICONDUCTOR DEVICES HAVING FACETED SILICIDE CONTACTS, AND RELATED...

METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS

TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...

METAL OXIDE SEMICONDUCTOR DEVICES HAVING IMPLANTED CARBON DIFFUSION...

MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT

METHOD OF FORMING STEPPED RECESSES FOR EMBEDDED STRAIN ELEMENTS IN...

METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...

MOS TRANSISTORS HAVING HIGH-K OFFSET SPACERS THAT REDUCE EXTERNAL R...

METHODS FOR FABRICATING A STRESS ENHANCED SEMICONDUCTOR DEVICE HAVI...