Frank Habel

Person

Freiberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,883,191
- Issue date Jan 5, 2021
- Freiberger Compound Materials GmbH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 10,662,549
- Issue date May 26, 2020
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processes for producing III-N single crystals, and III-N single cry...
- Patent number 10,584,427
- Issue date Mar 10, 2020
- Freiberger Compound Materials GmbH
- Marit Gründer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N templates and the reprocessing thereof a...
- Patent number 10,309,037
- Issue date Jun 4, 2019
- Freiberger Compound Materials GMBH
- Frank Lipski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing III-N single crystals, and III-N single crystal
- Patent number 9,896,779
- Issue date Feb 20, 2018
- Freiberger Compound Materials GmbH
- Marit Gründer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for manufacturing semiconductor compound material...
- Patent number 9,856,579
- Issue date Jan 2, 2018
- Freiberger Compound Materials GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the manufacture of a doped III-N bulk crystal and a fre...
- Patent number 9,461,121
- Issue date Oct 4, 2016
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 9,115,444
- Issue date Aug 25, 2015
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and device for manufacturing semiconductor compound material...
- Patent number 9,074,297
- Issue date Jul 7, 2015
- FREIBERGER COMPOUND MATERIALS GMBH
- Gunnar Leibiger
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for the manufacture of a doped III-N bulk crystal and a fre...
- Patent number 8,778,078
- Issue date Jul 15, 2014
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a III-N bulk crystal and a free-standing III-...
- Patent number 8,048,224
- Issue date Nov 1, 2011
- Freiberger Compound Materials GmbH
- Gunnar Leibiger
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing III-N layers, and III-N layers or III-N substr...
- Patent number 7,998,273
- Issue date Aug 16, 2011
- Freiberger Compound Materials GmbH
- Ferdinand Scholz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for selective masking of III-N layers and for the preparati...
- Patent number 7,727,332
- Issue date Jun 1, 2010
- Freiberger Compound Materials GmbH
- Frank Habel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE
- Publication number 20220325435
- Publication date Oct 13, 2022
- FREIBERGER COMPOUND MATERIALS GMBH
- Berndt WEINERT
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE
- Publication number 20200232117
- Publication date Jul 23, 2020
- FREIBERGER COMPOUND MATERIALS GMBH
- Berndt WEINERT
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...
- Publication number 20190276950
- Publication date Sep 12, 2019
- FREIBERGER COMPOUND MATERIALS GMBH
- Frank LIPSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRY...
- Publication number 20180237944
- Publication date Aug 23, 2018
- FREIBERGER COMPOUND MATERIALS GMBH
- Marit GRÜNDER
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE
- Publication number 20180080143
- Publication date Mar 22, 2018
- FREIBERGER COMPOUND MATERIALS GMBH
- Berndt WEINERT
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL
- Publication number 20150292111
- Publication date Oct 15, 2015
- FREIBERGER COMPOUND MATERIALS GMBH
- Marit GRÜNDER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...
- Publication number 20150050471
- Publication date Feb 19, 2015
- FREIBERGER COMPOUND MATERIALS GMBH
- Frank Lipski
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...
- Publication number 20140151716
- Publication date Jun 5, 2014
- FREIBERGER COMPOUND MATERIALS GMBH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR COMPOUND MATERIAL...
- Publication number 20120021163
- Publication date Jan 26, 2012
- FREIBERGER COMPOUND MATERIALS GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...
- Publication number 20110018106
- Publication date Jan 27, 2011
- FREIBERGER COMPOUND MATERIALS GmbH
- Ferdinand SCHOLZ
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and device for manufacturing semiconductor compound material...
- Publication number 20080213543
- Publication date Sep 4, 2008
- FREIBERGER COMPOUND MATERIALS GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS
- Publication number 20080203408
- Publication date Aug 28, 2008
- Freiberger Compound Materials GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS
- Publication number 20080203409
- Publication date Aug 28, 2008
- Freiberger Compound Materials GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing III-N Layers, and III-N Layers or III-N Substr...
- Publication number 20080166522
- Publication date Jul 10, 2008
- FREIBERGER COMPOUND MATERIALS GMBH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...
- Publication number 20080083910
- Publication date Apr 10, 2008
- FREIBERGER COMPOUND MATERIALS GmbH
- Ferdinand Scholz
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A III-N BULK CRYSTAL AND A FREE-STANDING III-...
- Publication number 20070257334
- Publication date Nov 8, 2007
- FREIBERGER COMPOUND MATERIALS GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATI...
- Publication number 20070163490
- Publication date Jul 19, 2007
- FREIBERGER COMPOUND MATERIALS GmbH
- Frank Habel
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDIN...
- Publication number 20070141814
- Publication date Jun 21, 2007
- FREIBERGER COMPOUND MATERIALS GmbH
- Gunnar Leibiger
- C30 - CRYSTAL GROWTH
Information Patent Application
Radiation-emitting optoelectronic component with a quantum well str...
- Publication number 20060060833
- Publication date Mar 23, 2006
- Osram Opto Semiconductors GmbH
- Peter Bruckner
- B82 - NANO-TECHNOLOGY

Frank Habel

Person

Patents Grantslast 30 patents

Growth of A-B crystals without crystal lattice curvature

Method for producing III-N templates and the reprocessing thereof a...

Growth of A-B crystals without crystal lattice curvature

Processes for producing III-N single crystals, and III-N single cry...

Method for producing III-N templates and the reprocessing thereof a...

Method for producing III-N single crystals, and III-N single crystal

Method and device for manufacturing semiconductor compound material...

Process for the manufacture of a doped III-N bulk crystal and a fre...

Method for producing III-N layers, and III-N layers or III-N substr...

Method and device for manufacturing semiconductor compound material...

Process for the manufacture of a doped III-N bulk crystal and a fre...

Process for producing a III-N bulk crystal and a free-standing III-...

Method for producing III-N layers, and III-N layers or III-N substr...

Process for selective masking of III-N layers and for the preparati...

Patents Applicationslast 30 patents

GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE

GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE

METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...

PROCESSES FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRY...

GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE

METHOD FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL

METHOD FOR PRODUCING III-N TEMPLATES AND THE REPROCESSING THEREOF A...

PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...

METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR COMPOUND MATERIAL...

METHOD FOR PRODUCING III-N LAYERS, AND III-N LAYERS OR III-N SUBSTR...

Method and device for manufacturing semiconductor compound material...

PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS

PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS

Method for Producing III-N Layers, and III-N Layers or III-N Substr...

PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FRE...

PROCESS FOR PRODUCING A III-N BULK CRYSTAL AND A FREE-STANDING III-...

PROCESS FOR SELECTIVE MASKING OF III-N LAYERS AND FOR THE PREPARATI...

PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDIN...

Radiation-emitting optoelectronic component with a quantum well str...