Frank Jakubowski

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device structure and semiconducto...
- Patent number 10,535,674
- Issue date Jan 14, 2020
- GLOBALFOUNDRIES Inc.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MEMS capacitive pressure sensors in fully depleted semiconductor on...
- Patent number 10,466,126
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Juergen Faul
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device including buried capacitive structures and a m...
- Patent number 10,056,369
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including buried capacitive structures and a m...
- Patent number 9,929,148
- Issue date Mar 27, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure and semiconducto...
- Patent number 9,748,259
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact elements and a...
- Patent number 9,324,854
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with separate workfunction material layers and...
- Patent number 9,299,616
- Issue date Mar 29, 2016
- GLOBALFOUNDRIES, INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer edge protection
- Patent number 9,236,240
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Qiaoming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for a semiconductor device and methods of making...
- Patent number 9,064,733
- Issue date Jun 23, 2015
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bulk FinFET devices so as to reduce punch throug...
- Patent number 9,023,715
- Issue date May 5, 2015
- GLOBALFOUNDRIES Inc.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced spacer thickness in semiconductor device fabrication
- Patent number 8,962,414
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES Inc.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for a semiconductor device and methods of making...
- Patent number 8,956,928
- Issue date Feb 17, 2015
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact landing pads for a semiconductor device and methods of maki...
- Patent number 8,951,920
- Issue date Feb 10, 2015
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of recessing an active region and STI structures in a commo...
- Patent number 8,853,051
- Issue date Oct 7, 2014
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact elements
- Patent number 8,835,245
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact landing pads for a semiconductor device and methods of maki...
- Patent number 8,823,149
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact elements and a...
- Patent number 8,722,523
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming isolation structures for semiconductor devices b...
- Patent number 8,716,102
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate compatible eDRAM transistor with recessed channel
- Patent number 8,716,077
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing gate cap materials while protecting active area
- Patent number 8,697,557
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices with isolation region...
- Patent number 8,679,940
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES, INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI semiconductor device comprising a substrate diode with reduced...
- Patent number 8,673,696
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with DRAM bit lines made from same material as...
- Patent number 8,609,457
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming isolation structures for semiconductor devices b...
- Patent number 8,603,895
- Issue date Dec 10, 2013
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance HKMG stack for gate first integration
- Patent number 8,455,960
- Issue date Jun 4, 2013
- GLOBALFOUNDRIES Inc.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI silicon nitride cap for flat FEOL topology
- Patent number 8,415,214
- Issue date Apr 9, 2013
- GLOBALFOUNDRIES, INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a doped portion of a semiconductor and method of...
- Patent number 7,618,867
- Issue date Nov 17, 2009
- Infineon Technologies AG
- Tobias Mono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array and method of forming the same
- Patent number 7,274,060
- Issue date Sep 25, 2007
- Infineon Technologies, AG
- Martin Popp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer gate stack structure comprising a metal layer for a FET...
- Patent number 7,078,748
- Issue date Jul 18, 2006
- Infineon Technologies AG
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor structure
- Patent number 6,967,133
- Issue date Nov 22, 2005
- Infineon Technologies AG
- Jürgen Amon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PRESSURE SENSORS
- Publication number 20190265117
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES INC.
- Juergen FAUL
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BURIED CAPACITIVE STRUCTURES AND A M...
- Publication number 20180240796
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING ONE OR MORE NONVOLATILE MEMORY CE...
- Publication number 20180175209
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...
- Publication number 20170317097
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...
- Publication number 20170250191
- Publication date Aug 31, 2017
- GLOBALFOUNDRIES INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL
- Publication number 20150228656
- Publication date Aug 13, 2015
- GLOBAL FOUNDRIES Inc.
- Till SCHLOESSER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF M...
- Publication number 20150145061
- Publication date May 28, 2015
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SPACER THICKNESS IN SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20150035063
- Publication date Feb 5, 2015
- GLOBAL FOUNDRIES Inc.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LANDING PADS FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKI...
- Publication number 20140335668
- Publication date Nov 13, 2014
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER EDGE PROTECTION
- Publication number 20140239454
- Publication date Aug 28, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Qiaoming CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS AND A...
- Publication number 20140203339
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT LANDING PADS FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKI...
- Publication number 20140159125
- Publication date Jun 12, 2014
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF M...
- Publication number 20140151816
- Publication date Jun 5, 2014
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES B...
- Publication number 20140051227
- Publication date Feb 20, 2014
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BULK FINFET DEVICES SO AS TO REDUCE PUNCH THROUG...
- Publication number 20130280883
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Juergen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF RECESSING AN ACTIVE REGION AND STI STRUCTURES IN A COMMO...
- Publication number 20130273709
- Publication date Oct 17, 2013
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES WITH ISOLATION REGION...
- Publication number 20130217205
- Publication date Aug 22, 2013
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL
- Publication number 20130049103
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE HKMG STACK FOR GATE FIRST INTEGRATION
- Publication number 20130020656
- Publication date Jan 24, 2013
- GLOBALFOUNDRIES INC.
- Frank Jakubowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Removing Gate Cap Materials While Protecting Active Area
- Publication number 20120313187
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with DRAM Bit Lines Made From Same Material as...
- Publication number 20120280296
- Publication date Nov 8, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI Semiconductor Device Comprising a Substrate Diode with Reduced...
- Publication number 20120217582
- Publication date Aug 30, 2012
- GLOBALFOUNDRIES INC.
- Peter BAARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS
- Publication number 20120211837
- Publication date Aug 23, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Self-Aligned Contact Elements and a...
- Publication number 20120211844
- Publication date Aug 23, 2012
- GLOBALFOUNDRIES INC.
- Till Schloesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI SILICON NITRIDE CAP FOR FLAT FEOL TOPOLOGY
- Publication number 20120187450
- Publication date Jul 26, 2012
- GLOBALFOUNDRIES INC.
- Frank JAKUBOWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method for an integrated circuit structure
- Publication number 20080124920
- Publication date May 29, 2008
- Clemens Fitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a doped portion of a semiconductor and method of...
- Publication number 20080026530
- Publication date Jan 31, 2008
- Tobias Mono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Including a Memory Cell Array
- Publication number 20070290249
- Publication date Dec 20, 2007
- INFINEON TECHNOLOGIES AG
- Martin Popp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell array and method of forming the same
- Publication number 20060284225
- Publication date Dec 21, 2006
- Martin Popp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20060228876
- Publication date Oct 12, 2006
- Infineon Technologies AG
- Olaf Storbeck
- H01 - BASIC ELECTRIC ELEMENTS

Frank Jakubowski

Person

Patents Grantslast 30 patents

Method of forming a semiconductor device structure and semiconducto...

MEMS capacitive pressure sensors in fully depleted semiconductor on...

Semiconductor device including buried capacitive structures and a m...

Semiconductor device including buried capacitive structures and a m...

Method of forming a semiconductor device structure and semiconducto...

Semiconductor device comprising self-aligned contact elements and a...

Integrated circuits with separate workfunction material layers and...

Wafer edge protection

Contact structure for a semiconductor device and methods of making...

Methods of forming bulk FinFET devices so as to reduce punch throug...

Reduced spacer thickness in semiconductor device fabrication

Contact structure for a semiconductor device and methods of making...

Contact landing pads for a semiconductor device and methods of maki...

Methods of recessing an active region and STI structures in a commo...

Semiconductor device comprising self-aligned contact elements

Contact landing pads for a semiconductor device and methods of maki...

Semiconductor device comprising self-aligned contact elements and a...

Methods of forming isolation structures for semiconductor devices b...

Replacement gate compatible eDRAM transistor with recessed channel

Method of removing gate cap materials while protecting active area

Methods for fabricating semiconductor devices with isolation region...

SOI semiconductor device comprising a substrate diode with reduced...

Semiconductor device with DRAM bit lines made from same material as...

Methods of forming isolation structures for semiconductor devices b...

High performance HKMG stack for gate first integration

STI silicon nitride cap for flat FEOL topology

Method of forming a doped portion of a semiconductor and method of...

Memory cell array and method of forming the same

Multi-layer gate stack structure comprising a metal layer for a FET...

Method for fabricating a semiconductor structure

Patents Applicationslast 30 patents

PRESSURE SENSORS

SEMICONDUCTOR DEVICE INCLUDING BURIED CAPACITIVE STRUCTURES AND A M...

SEMICONDUCTOR STRUCTURE INCLUDING ONE OR MORE NONVOLATILE MEMORY CE...

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...

REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL

NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF M...

REDUCED SPACER THICKNESS IN SEMICONDUCTOR DEVICE FABRICATION

CONTACT LANDING PADS FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKI...

WAFER EDGE PROTECTION

SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS AND A...

CONTACT LANDING PADS FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKI...

NOVEL CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND METHODS OF M...

METHODS OF FORMING ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES B...

METHODS OF FORMING BULK FINFET DEVICES SO AS TO REDUCE PUNCH THROUG...

METHODS OF RECESSING AN ACTIVE REGION AND STI STRUCTURES IN A COMMO...

METHODS FOR FABRICATING SEMICONDUCTOR DEVICES WITH ISOLATION REGION...

REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL

HIGH PERFORMANCE HKMG STACK FOR GATE FIRST INTEGRATION

Method of Removing Gate Cap Materials While Protecting Active Area

Semiconductor Device with DRAM Bit Lines Made From Same Material as...

SOI Semiconductor Device Comprising a Substrate Diode with Reduced...

SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS

Semiconductor Device Comprising Self-Aligned Contact Elements and a...

STI SILICON NITRIDE CAP FOR FLAT FEOL TOPOLOGY

Fabrication method for an integrated circuit structure

Method of forming a doped portion of a semiconductor and method of...

Integrated Circuit Including a Memory Cell Array

Memory cell array and method of forming the same

Method of manufacturing a semiconductor device