Frank M. Cerio, JR.

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective deposition of metal-containing cap layers for semiconduct...
- Patent number 8,242,019
- Issue date Aug 14, 2012
- Tokyo Electron Limited
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid in-situ dry cleaning of oxidized surface layers
- Patent number 8,227,344
- Issue date Jul 24, 2012
- Tokyo Electron Limited
- Adam Selsley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface cleaning and selective deposition of metal-containing cap l...
- Patent number 8,178,439
- Issue date May 15, 2012
- Tokyo Electron Limited
- Kazuhito Tohnoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma enhanced atomic layer deposition system and method
- Patent number 8,163,087
- Issue date Apr 24, 2012
- Tokyo Electron Limited
- Jacques Faguet
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for multi-step copper plating on a continuous ruthenium fil...
- Patent number 8,076,241
- Issue date Dec 13, 2011
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ionized physical vapor deposition (iPVD) process
- Patent number 7,901,545
- Issue date Mar 8, 2011
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ionized physical vapor deposition (iPVD) process
- Patent number 7,892,406
- Issue date Feb 22, 2011
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming semiconductor devices containing metal cap layers
- Patent number 7,871,929
- Issue date Jan 18, 2011
- TEL Epion Inc.
- Noel Russell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a ruthenium metal cap layer
- Patent number 7,799,681
- Issue date Sep 21, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming semiconductor devices containing metal cap layers
- Patent number 7,776,743
- Issue date Aug 17, 2010
- TEL Epion Inc.
- Noel Russell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of light enhanced atomic layer deposition
- Patent number 7,727,912
- Issue date Jun 1, 2010
- Tokyo Electron Limited
- Tadahiro Ishizaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for a metallic dry-filling process
- Patent number 7,700,484
- Issue date Apr 20, 2010
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Barrier deposition using ionized physical vapor deposition (iPVD)
- Patent number 7,700,474
- Issue date Apr 20, 2010
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma enhanced atomic layer deposition system
- Patent number 7,651,568
- Issue date Jan 26, 2010
- Tokyo Electron Limited
- Tadahiro Ishizaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Sequential tantalum-nitride deposition
- Patent number 7,642,201
- Issue date Jan 5, 2010
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Temperature-controlled metallic dry-fill process
- Patent number 7,618,888
- Issue date Nov 17, 2009
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Depositing rhuthenium films using ionized physical vapor deposition...
- Patent number 7,588,667
- Issue date Sep 15, 2009
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for a metallic dry-filling process
- Patent number 7,348,266
- Issue date Mar 25, 2008
- Tokyo Electron Limited
- Frank M. Cerio, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP L...
- Publication number 20110244680
- Publication date Oct 6, 2011
- TOKYO ELECTRON LIMITED
- Kazuhito Tohnoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID IN-SITU DRY CLEANING OF OXIDIZED SURFACE LAYERS
- Publication number 20110212274
- Publication date Sep 1, 2011
- TOKYO ELECTRON LIMITED
- Adam Selsley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FIL...
- Publication number 20110076390
- Publication date Mar 31, 2011
- TOKYO ELECTRON LIMITED
- Frank M. Cerio, JR.
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCT...
- Publication number 20100248473
- Publication date Sep 30, 2010
- TOKYO ELECTRON LIMITED
- Tadahiro Ishizaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING RUTHENIUM METAL CAP LAYERS
- Publication number 20100081274
- Publication date Apr 1, 2010
- TOKYO ELECTRON LIMITED
- Tadahiro Ishizaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS
- Publication number 20100029071
- Publication date Feb 4, 2010
- TEL Epion Inc.
- Noel Russell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS
- Publication number 20100029078
- Publication date Feb 4, 2010
- TEL Epion Inc.
- Noel Russell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER
- Publication number 20100015798
- Publication date Jan 21, 2010
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
- Publication number 20090321247
- Publication date Dec 31, 2009
- TOKYO ELECTRON LIMITED
- Frank M. Cerio, JR.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF DEPOSITING METAL-CONTAINING FILMS BY INDUCTIVELY COUPLED...
- Publication number 20090242385
- Publication date Oct 1, 2009
- TOKYO ELECTRON LIMITED
- Rodney L. Robison
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEQUENTIAL TANTALUM-NITRIDE DEPOSITION
- Publication number 20090191721
- Publication date Jul 30, 2009
- TOKYO ELECTRON LIMITED
- Frank M. Cerio, JR.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Frank M. Cerio, JR.

Person

Patents Grantslast 30 patents

Selective deposition of metal-containing cap layers for semiconduct...

Hybrid in-situ dry cleaning of oxidized surface layers

Surface cleaning and selective deposition of metal-containing cap l...

Plasma enhanced atomic layer deposition system and method

Methods for multi-step copper plating on a continuous ruthenium fil...

Ionized physical vapor deposition (iPVD) process

Ionized physical vapor deposition (iPVD) process

Method of forming semiconductor devices containing metal cap layers

Method for forming a ruthenium metal cap layer

Method of forming semiconductor devices containing metal cap layers

Method of light enhanced atomic layer deposition

Method and apparatus for a metallic dry-filling process

Barrier deposition using ionized physical vapor deposition (iPVD)

Plasma enhanced atomic layer deposition system

Sequential tantalum-nitride deposition

Temperature-controlled metallic dry-fill process

Depositing rhuthenium films using ionized physical vapor deposition...

Method and apparatus for a metallic dry-filling process

Patents Applicationslast 30 patents

SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP L...

HYBRID IN-SITU DRY CLEANING OF OXIDIZED SURFACE LAYERS

METHODS FOR MULTI-STEP COPPER PLATING ON A CONTINUOUS RUTHENIUM FIL...

SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCT...

METHOD FOR FORMING RUTHENIUM METAL CAP LAYERS

METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS

METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS

METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER

IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS

METHOD OF DEPOSITING METAL-CONTAINING FILMS BY INDUCTIVELY COUPLED...

SEQUENTIAL TANTALUM-NITRIDE DEPOSITION