Frédéric Milesi

Person

Sassenage, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate polishing method
- Patent number 12,327,719
- Issue date Jun 10, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a transistor channel structure with uniaxial...
- Patent number 9,935,019
- Issue date Apr 3, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation process characterization method
- Patent number 7,943,402
- Issue date May 17, 2011
- Commissariat a l'Energie Atomique
- Frédéric Milesi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CREATION OF A TRANSISTOR WITH CLOSE SILICIDE SOURCE AND DRAIN FROM...
- Publication number 20240249945
- Publication date Jul 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING DOPED TRANSISTOR SOURCE AND DRAIN
- Publication number 20240203735
- Publication date Jun 20, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DONOR SUBSTRATE FOR THE TRANSFER OF A THIN LAYER AND ASSOCIATED TRA...
- Publication number 20240030061
- Publication date Jan 25, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Larry Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO...
- Publication number 20230193511
- Publication date Jun 22, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Cédric MASANTE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE POLISHING METHOD
- Publication number 20220157612
- Publication date May 19, 2022
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A TRANSISTOR CHANNEL STRUCTURE WITH UNIAXIAL...
- Publication number 20170076997
- Publication date Mar 16, 2017
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION PROCESS CHARACTERIZATION METHOD
- Publication number 20100197052
- Publication date Aug 5, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Frédéric Milesi
- H01 - BASIC ELECTRIC ELEMENTS

Frédéric Milesi

Person

Patents Grantslast 30 patents

Semiconductor substrate polishing method

Method of fabricating a transistor channel structure with uniaxial...

Ion implantation process characterization method

Patents Applicationslast 30 patents

CREATION OF A TRANSISTOR WITH CLOSE SILICIDE SOURCE AND DRAIN FROM...

METHOD FOR PRODUCING DOPED TRANSISTOR SOURCE AND DRAIN

DONOR SUBSTRATE FOR THE TRANSFER OF A THIN LAYER AND ASSOCIATED TRA...

METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO...

SEMICONDUCTOR SUBSTRATE POLISHING METHOD

METHOD OF FABRICATING A TRANSISTOR CHANNEL STRUCTURE WITH UNIAXIAL...

ION IMPLANTATION PROCESS CHARACTERIZATION METHOD