Friedhelm Bauer

Person

Ittigen, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Gate turn-off thyristor for high blocking voltage and small compone...
- Patent number 5,710,445
- Issue date Jan 20, 1998
- Asea Brown Boveri AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Turn-off, MOS-controlled, power semiconductor component
- Patent number 5,698,867
- Issue date Dec 16, 1997
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component with transparent emitter and stop layer
- Patent number 5,668,385
- Issue date Sep 16, 1997
- Asea Brown Boveri AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable power semiconductor component
- Patent number 5,661,315
- Issue date Aug 26, 1997
- Asea Brown Boveri AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode in which electrons are injected into a reverse...
- Patent number 5,619,047
- Issue date Apr 8, 1997
- Asea Brown Boveri AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-controlled power semiconductor component for high voltages
- Patent number 5,616,938
- Issue date Apr 1, 1997
- Asea Brown Boveri AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor
- Patent number 5,491,351
- Issue date Feb 13, 1996
- ABB Management AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with self-aligning cathode pattern and method for producing it
- Patent number 5,414,290
- Issue date May 9, 1995
- ABB Management AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Turn-off power semiconductor device
- Patent number 5,349,213
- Issue date Sep 20, 1994
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-controlled thyristor MCT
- Patent number 5,243,201
- Issue date Sep 7, 1993
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with switch-off facility
- Patent number 5,144,400
- Issue date Sep 1, 1992
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off power semiconductor component
- Patent number 5,105,244
- Issue date Apr 14, 1992
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional semiconductor component that can be turned off
- Patent number 5,040,042
- Issue date Aug 13, 1991
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-controlled bipolar power semiconductor component
- Patent number 4,985,741
- Issue date Jan 15, 1991
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect controlled, bipolar power semiconductor component with...
- Patent number 4,975,782
- Issue date Dec 4, 1990
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable power semiconductor component
- Patent number 4,967,255
- Issue date Oct 30, 1990
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-controlled thyristor (MCT)
- Patent number 4,954,869
- Issue date Sep 4, 1990
- ASEA Brown Boveri Ltd.
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS

Friedhelm Bauer

Person

Patents Grantslast 30 patents

Gate turn-off thyristor for high blocking voltage and small compone...

Turn-off, MOS-controlled, power semiconductor component

Power semiconductor component with transparent emitter and stop layer

Controllable power semiconductor component

Semiconductor diode in which electrons are injected into a reverse...

MOS-controlled power semiconductor component for high voltages

Gate turn-off thyristor

IGBT with self-aligning cathode pattern and method for producing it

Turn-off power semiconductor device

MOS-controlled thyristor MCT

Power semiconductor device with switch-off facility

Gate turn-off power semiconductor component

Bidirectional semiconductor component that can be turned off

MOS-controlled bipolar power semiconductor component

Field effect controlled, bipolar power semiconductor component with...

Controllable power semiconductor component

MOS-controlled thyristor (MCT)