Fu-Cheng Wang

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of field-effect transistor with vertical body-material...
- Patent number 8,129,262
- Issue date Mar 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor with reduced junction capaci...
- Patent number 7,879,669
- Issue date Feb 1, 2011
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of complementary field-effect transistors with vertical...
- Patent number 7,785,971
- Issue date Aug 31, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor for alleviatin...
- Patent number 7,700,980
- Issue date Apr 20, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure in which like-polarity insulated-gate field...
- Patent number 7,701,005
- Issue date Apr 20, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of like-polarity insulated-gate field-effect transistor...
- Patent number 7,595,244
- Issue date Sep 29, 2009
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel field-effect transistor with reduced junction capacitance
- Patent number 7,145,191
- Issue date Dec 5, 2006
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of p-channel field-effect transistor for reducing junct...
- Patent number 6,797,576
- Issue date Sep 28, 2004
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor for alleviating short-channe...
- Patent number 6,599,804
- Issue date Jul 29, 2003
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of mask shadowing and angled implantation in fabricating asymme...
- Patent number 6,566,204
- Issue date May 20, 2003
- National Semiconductor Corporation
- Fu-Cheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor for alleviating short-channel effects
- Patent number 6,548,842
- Issue date Apr 15, 2003
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench isolation process that utilizes smoothening layer
- Patent number 6,461,932
- Issue date Oct 8, 2002
- National Semiconductor Corporation
- Fu-Cheng Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120273880
- Publication date Nov 1, 2012
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181614
- Publication date Jul 19, 2012
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181620
- Publication date Jul 19, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of field-effect transistor for alleviating short-channe...
- Publication number 20020074612
- Publication date Jun 20, 2002
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS

Fu-Cheng Wang

Person

Patents Grantslast 30 patents

Fabrication of field-effect transistor with vertical body-material...

Fabrication of field-effect transistor with reduced junction capaci...

Fabrication of complementary field-effect transistors with vertical...

Structure and fabrication of field-effect transistor for alleviatin...

Semiconductor structure in which like-polarity insulated-gate field...

Fabrication of like-polarity insulated-gate field-effect transistor...

P-channel field-effect transistor with reduced junction capacitance

Fabrication of p-channel field-effect transistor for reducing junct...

Fabrication of field-effect transistor for alleviating short-channe...

Use of mask shadowing and angled implantation in fabricating asymme...

Field-effect transistor for alleviating short-channel effects

Semiconductor trench isolation process that utilizes smoothening layer

Patents Applicationslast 30 patents

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Fabrication of field-effect transistor for alleviating short-channe...