Fuh-Cheng Jong

Person

Tainan, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Temperature power generation device and temperature power generatio...
- Patent number 7,919,709
- Issue date Apr 5, 2011
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon barrier capacitor device structure
- Patent number 7,023,038
- Issue date Apr 4, 2006
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask ROM
- Patent number 6,831,851
- Issue date Dec 14, 2004
- Macronix International Co., Ltd.
- Fuh-Cheng Jong
- G11 - INFORMATION STORAGE
Information Patent Grant
Hexagonal gate structure for radiation resistant flash memory cell
- Patent number 6,777,742
- Issue date Aug 17, 2004
- Macronix International Co., Ltd.
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory cell for prevention of second bit effect
- Patent number 6,762,467
- Issue date Jul 13, 2004
- Macronix International Co., Ltd.
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin bit cell flash memory device
- Patent number 6,538,292
- Issue date Mar 25, 2003
- Macronix International Co. Ltd.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reading two-bit memories of NROM cell
- Patent number 6,487,114
- Issue date Nov 26, 2002
- Macronix International Co., Ltd.
- Fuh-Cheng Jong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a nonvolatile memory with optimum bias condition
- Patent number 6,348,381
- Issue date Feb 19, 2002
- Macronix International Co., Ltd.
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random access memory cell
- Patent number 6,324,092
- Issue date Nov 27, 2001
- Macronix International Co., Ltd.
- Fuh-cheng Jong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20240389320
- Publication date Nov 21, 2024
- Fuh-cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE POWER GENERATION DEVICE AND TEMPERATURE POWER GENERATIO...
- Publication number 20090056783
- Publication date Mar 5, 2009
- Fuh-cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pillar nonvolatile memory layout methodology
- Publication number 20060151841
- Publication date Jul 13, 2006
- Fuh-cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon barrier capacitor device structure
- Publication number 20050269598
- Publication date Dec 8, 2005
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hexagonal gate structure for radiation resistant flash memory cell
- Publication number 20040041197
- Publication date Mar 4, 2004
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mask ROM
- Publication number 20030198074
- Publication date Oct 23, 2003
- Fuh-Cheng Jong
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory cell for prevention from second bit effect
- Publication number 20030193062
- Publication date Oct 16, 2003
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EEPROM memory cell with high radiation resistance
- Publication number 20030155605
- Publication date Aug 21, 2003
- MACRONIX INTERNATIONAL CO., LTD
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating an ONO layer
- Publication number 20020168869
- Publication date Nov 14, 2002
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Twin bit cell flash memory device
- Publication number 20020149066
- Publication date Oct 17, 2002
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reading two-bit memories of NROM cell
- Publication number 20020118566
- Publication date Aug 29, 2002
- Fuh-Cheng Jong
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile flash memory cell with application of drain induced ba...
- Publication number 20020074591
- Publication date Jun 20, 2002
- MACRONIX INTERNATIONAL CO.,LTD.
- Fuh-Cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS

Fuh-Cheng Jong

Person

Patents Grantslast 30 patents

Temperature power generation device and temperature power generatio...

Silicon barrier capacitor device structure

Mask ROM

Hexagonal gate structure for radiation resistant flash memory cell

Nonvolatile memory cell for prevention of second bit effect

Twin bit cell flash memory device

Method of reading two-bit memories of NROM cell

Method for forming a nonvolatile memory with optimum bias condition

Random access memory cell

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY CELL

TEMPERATURE POWER GENERATION DEVICE AND TEMPERATURE POWER GENERATIO...

Pillar nonvolatile memory layout methodology

Silicon barrier capacitor device structure

Hexagonal gate structure for radiation resistant flash memory cell

Mask ROM

Nonvolatile memory cell for prevention from second bit effect

EEPROM memory cell with high radiation resistance

Method for fabricating an ONO layer

Twin bit cell flash memory device

Method of reading two-bit memories of NROM cell

Non-volatile flash memory cell with application of drain induced ba...