Fumiaki Okazaki

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing insulated gate field effect transistor
- Patent number 11,289,581
- Issue date Mar 29, 2022
- Sony Corporation
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate field effect transistor
- Patent number 10,505,008
- Issue date Dec 10, 2019
- Sony Corporation
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate field effect transistor
- Patent number 10,014,384
- Issue date Jul 3, 2018
- Sony Corporation
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-State imaging device and imaging apparatus having offset opti...
- Patent number 8,817,164
- Issue date Aug 26, 2014
- Sony Corporation
- Hiroshi Tayanaka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for manufacturing insulated gate field effect transistor
- Patent number 8,486,789
- Issue date Jul 16, 2013
- Sony Corporation
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device with pixels having first and second opti...
- Patent number 8,390,726
- Issue date Mar 5, 2013
- Sony Corporation
- Hiroshi Tayanaka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR
- Publication number 20200066863
- Publication date Feb 27, 2020
- SONY CORPORATION
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR
- Publication number 20180269300
- Publication date Sep 20, 2018
- SONY CORPORATION
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR
- Publication number 20150084105
- Publication date Mar 26, 2015
- SONY CORPORATION
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR
- Publication number 20130292748
- Publication date Nov 7, 2013
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
- Publication number 20130234220
- Publication date Sep 12, 2013
- SONY CORPORATION
- Hiroshi Tayanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
- Publication number 20100245648
- Publication date Sep 30, 2010
- SONY CORPORATION
- Hiroshi Tayanaka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR
- Publication number 20080197426
- Publication date Aug 21, 2008
- SONY CORPORATION
- Fumiaki Okazaki
- H01 - BASIC ELECTRIC ELEMENTS

Fumiaki Okazaki

Person

Patents Grantslast 30 patents

Method for manufacturing insulated gate field effect transistor

Method for manufacturing insulated gate field effect transistor

Method for manufacturing insulated gate field effect transistor

Solid-State imaging device and imaging apparatus having offset opti...

Method for manufacturing insulated gate field effect transistor

Solid-state imaging device with pixels having first and second opti...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR

METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR

METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR

METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR

SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

METHOD FOR MANUFACTURING INSULATED GATE FIELD EFFECT TRANSISTOR