Fumihiko Jobe

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of monocrystalline gallium nitride localized s...
- Patent number 7,393,763
- Issue date Jul 1, 2008
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing apparatus for buried insulating layer-type semiconduc...
- Patent number 7,128,788
- Issue date Oct 31, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for buried insulating layer-type semiconductor...
- Patent number 7,084,049
- Issue date Aug 1, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing device for buried insulating layer type single crysta...
- Patent number 7,077,875
- Issue date Jul 18, 2006
- Osaka Prefecture
- Katsutoshi Izumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing buried insulating layer type single crysta...
- Patent number 6,927,144
- Issue date Aug 9, 2005
- Osaka Prefecture
- Katsutoshi Izumi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal silicon carbide thin film fabrication method and fab...
- Patent number 6,773,508
- Issue date Aug 10, 2004
- Osaka Prefecture
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Etching method and etching apparatus of carbon thin film
- Patent number 6,743,729
- Issue date Jun 1, 2004
- Osaka Prefecture
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Manufacturing method of monocrystalline gallium nitride localized s...
- Publication number 20050148108
- Publication date Jul 7, 2005
- OSAKA PREFECTURE
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing device for buried insulating layer type single crysta...
- Publication number 20050136611
- Publication date Jun 23, 2005
- Osaka Prefecture
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Manufacturing Buried Insulating Layer Type Single Crysta...
- Publication number 20040191966
- Publication date Sep 30, 2004
- OSAKA PREFECTURE,
- Katsutoshi IZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing apparatus for buried insulating layer-type semiconduc...
- Publication number 20040173154
- Publication date Sep 9, 2004
- OSAKA PREFECTURE
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monocrystalline gallium nitride localized substrate and manufacturi...
- Publication number 20040099871
- Publication date May 27, 2004
- OSAKA PREFECTURE
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for buried insulating layer-type semiconductor...
- Publication number 20030148586
- Publication date Aug 7, 2003
- OSAKA PREFECTURE
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single crystal silicon carbide thin film fabrication method and fab...
- Publication number 20020185058
- Publication date Dec 12, 2002
- Osaka Prefecture
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Etching method and etching apparatus of carbon thin film
- Publication number 20020130107
- Publication date Sep 19, 2002
- OSAKA PREFECTURE
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS

Fumihiko Jobe

Person

Patents Grantslast 30 patents

Manufacturing method of monocrystalline gallium nitride localized s...

Manufacturing apparatus for buried insulating layer-type semiconduc...

Manufacturing method for buried insulating layer-type semiconductor...

Manufacturing device for buried insulating layer type single crysta...

Method for manufacturing buried insulating layer type single crysta...

Single crystal silicon carbide thin film fabrication method and fab...

Etching method and etching apparatus of carbon thin film

Patents Applicationslast 30 patents

Manufacturing method of monocrystalline gallium nitride localized s...

Manufacturing device for buried insulating layer type single crysta...

Method for Manufacturing Buried Insulating Layer Type Single Crysta...

Manufacturing apparatus for buried insulating layer-type semiconduc...

Monocrystalline gallium nitride localized substrate and manufacturi...

Manufacturing method for buried insulating layer-type semiconductor...

Single crystal silicon carbide thin film fabrication method and fab...

Etching method and etching apparatus of carbon thin film