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Fumihiro Matsukura
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Sendai City, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Magnetic tunnel junction element and magnetic memory
Patent number
11,563,169
Issue date
Jan 24, 2023
Tohoku University
Hideo Sato
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistive element and magnetic memory
Patent number
10,804,457
Issue date
Oct 13, 2020
Tohoku University
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
10,658,572
Issue date
May 19, 2020
Tohoku University
Hideo Sato
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistive element and magnetic memory
Patent number
10,651,369
Issue date
May 12, 2020
Tohoku University
Hideo Ohno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
10,263,180
Issue date
Apr 16, 2019
Tohoku University
Hideo Sato
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
10,164,174
Issue date
Dec 25, 2018
Tohoku University
Hideo Sato
G11 - INFORMATION STORAGE
Information
Patent Grant
Control method for magnetoresistance effect element and control dev...
Patent number
10,127,957
Issue date
Nov 13, 2018
Tohoku University
Shun Kanai
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
9,577,182
Issue date
Feb 21, 2017
Tohoku University
Shoji Ikeda
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
9,564,152
Issue date
Feb 7, 2017
Tohoku University
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistive element and magnetic memory
Patent number
9,450,177
Issue date
Sep 20, 2016
Tohoku University
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
9,202,545
Issue date
Dec 1, 2015
Tohoku University
Hideo Sato
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
9,135,973
Issue date
Sep 15, 2015
TOHOKU UNIVERSITY
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistance effect element and magnetic memory
Patent number
8,917,541
Issue date
Dec 23, 2014
Hitachi, Ltd.
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Current injection magnetic domain wall moving element
Patent number
8,331,140
Issue date
Dec 11, 2012
Japan Science and Technology Agency
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Nonvolatile solid state magnetic memory and recording method thereof
Patent number
8,310,867
Issue date
Nov 13, 2012
Japan Science and Technology Agency
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Grant
Zinc blende type CrSb compound, method for fabricating the same, an...
Patent number
6,861,342
Issue date
Mar 1, 2005
Tohoku University
Hideo Ohno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of generating spin-polarized conduction electron and semicon...
Patent number
6,482,729
Issue date
Nov 19, 2002
Tohoku University
Hideo Ohno
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20190074433
Publication date
Mar 7, 2019
TOHOKU UNIVERSITY
Hideo SATO
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
Publication number
20190019944
Publication date
Jan 17, 2019
TOHOKU UNIVERSITY
Hideo Sato
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20180175286
Publication date
Jun 21, 2018
TOHOKU UNIVERSITY
Hideo SATO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20170324030
Publication date
Nov 9, 2017
TOHOKU UNIVERSITY
Hideo SATO
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
Publication number
20170110654
Publication date
Apr 20, 2017
TOHOKU UNIVERSITY
Hideo OHNO
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
Publication number
20170025600
Publication date
Jan 26, 2017
TOHOKU UNIVERSITY
Hideo OHNO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CONTROL METHOD FOR MAGNETORESISTANCE EFFECT ELEMENT AND CONTROL DEV...
Publication number
20160329086
Publication date
Nov 10, 2016
TOHOKU UNIVERSITY
Shun KANAI
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20160233416
Publication date
Aug 11, 2016
TOHOKU UNIVERSITY
Shoji IKEDA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20150109853
Publication date
Apr 23, 2015
TOHOKU UNIVERSITY
Hideo Sato
G11 - INFORMATION STORAGE
Information
Patent Application
Magnetoresistance Effect Element and Magnetic Memory
Publication number
20140205862
Publication date
Jul 24, 2014
Tohoku University
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20130141966
Publication date
Jun 6, 2013
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
Publication number
20130094284
Publication date
Apr 18, 2013
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
Magnetoresistive Element and Magnetic Memory
Publication number
20120320666
Publication date
Dec 20, 2012
TOHOKU UNIVERSITY
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
NONVOLATILE SOLID STATE MAGNETIC MEMORY AND RECORDING METHOD THEREOF
Publication number
20100246252
Publication date
Sep 30, 2010
TOHOKU UNIVERSITY
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
Current Injection Magnetic Domain Wall Moving Element
Publication number
20080137405
Publication date
Jun 12, 2008
Japan Science and Technology Agency
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
Nonvolatile solid-state magnetic memory, method for controlling coe...
Publication number
20040085827
Publication date
May 6, 2004
TOHOKU UNIVERSITY
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
Method for recording in a nonvolatile solid-state magnetic memory
Publication number
20040085811
Publication date
May 6, 2004
TOHOKU UNIVERSITY
Hideo Ohno
G11 - INFORMATION STORAGE
Information
Patent Application
Zinc blende type CrSb compound, method for fabricating the same, an...
Publication number
20030003704
Publication date
Jan 2, 2003
TOHOKU UNIVERSITY
Hideo Ohno
B82 - NANO-TECHNOLOGY
Information
Patent Application
Method of generating spin-polarized conduction electron and semicon...
Publication number
20010031547
Publication date
Oct 18, 2001
TOHOKU UNIVERSITY
Hideo Ohno
B82 - NANO-TECHNOLOGY