Fumikazu IMAI

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor substrate
- Patent number 11,158,503
- Issue date Oct 26, 2021
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor substrate and method of manufacturing...
- Patent number 10,615,031
- Issue date Apr 7, 2020
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,600,872
- Issue date Mar 24, 2020
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,600,921
- Issue date Mar 24, 2020
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 10,580,870
- Issue date Mar 3, 2020
- Fuji Electric Co., Ltd.
- Makoto Utsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method of si...
- Patent number 10,374,050
- Issue date Aug 6, 2019
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,103,220
- Issue date Oct 16, 2018
- Fuji Electric Co., Ltd.
- Tomonori Katano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,032,894
- Issue date Jul 24, 2018
- Fuji Electric Co., Ltd.
- Takuya Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprises two or more regions that have a same...
- Patent number 9,929,232
- Issue date Mar 27, 2018
- Fuji Electric Co., Ltd.
- Tomonori Katano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 9,887,270
- Issue date Feb 6, 2018
- Fuji Electric Co., Ltd.
- Masanobu Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide semiconductor device
- Patent number 9,685,333
- Issue date Jun 20, 2017
- Fuji Electric Co., Ltd.
- Tsunehiro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device and method for manufacturing the same
- Patent number 9,401,411
- Issue date Jul 26, 2016
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,269,579
- Issue date Feb 23, 2016
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 9,263,543
- Issue date Feb 16, 2016
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,240,451
- Issue date Jan 19, 2016
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device and method for manufacturing the same
- Patent number 9,159,792
- Issue date Oct 13, 2015
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device and method for manufacturing the same
- Patent number 9,129,939
- Issue date Sep 8, 2015
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20200219723
- Publication date Jul 9, 2020
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190245079
- Publication date Aug 8, 2019
- Fuji Electric Co., Ltd.
- Fumikazu Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20190157398
- Publication date May 23, 2019
- Fuji Electric Co., Ltd.
- Makoto UTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20180301536
- Publication date Oct 18, 2018
- Fuji Electric Co., Ltd.
- Makoto UTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180175141
- Publication date Jun 21, 2018
- Fuji Electric Co., Ltd.
- Tomonori KATANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...
- Publication number 20180040480
- Publication date Feb 8, 2018
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20170271439
- Publication date Sep 21, 2017
- Fuji Electric Co., Ltd.
- Tomonori KATANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20170271486
- Publication date Sep 21, 2017
- Fuji Electric Co., Ltd.
- Takuya KOMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20170271468
- Publication date Sep 21, 2017
- Fuji Electric Co., Ltd.
- Masanobu IWAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20160254393
- Publication date Sep 1, 2016
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160155640
- Publication date Jun 2, 2016
- Fuji Electric Co., Ltd.
- Tsunehiro NAKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SI...
- Publication number 20160087061
- Publication date Mar 24, 2016
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150325666
- Publication date Nov 12, 2015
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20150024581
- Publication date Jan 22, 2015
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150001554
- Publication date Jan 1, 2015
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140346531
- Publication date Nov 27, 2014
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140061674
- Publication date Mar 6, 2014
- Fuji Electric Co., Ltd.
- Fumikazu IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20140051241
- Publication date Feb 20, 2014
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS

Fumikazu IMAI

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor substrate

Silicon carbide semiconductor substrate and method of manufacturing...

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide semiconductor device and method of manufacturing si...

Method of manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device and manufacturing method of si...

Method of manufacturing semiconductor device

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device comprises two or more regions that have a same...

Silicon carbide semiconductor device and method of manufacturing si...

Manufacturing method of silicon carbide semiconductor device

SiC semiconductor device and method for manufacturing the same

Method for manufacturing silicon carbide semiconductor device

Method for manufacturing a semiconductor device

Silicon carbide semiconductor device

SiC semiconductor device and method for manufacturing the same

SiC semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SI...

SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE