Fumitake Nakanishi

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium arsenide single crystal substrate and method for producing...
- Patent number 11,891,720
- Issue date Feb 6, 2024
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- G01 - MEASURING TESTING
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,312,340
- Issue date Apr 12, 2016
- Sumitomo Electric Industries, Ltd
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,136,337
- Issue date Sep 15, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and manufacturing method thereof
- Patent number 8,605,769
- Issue date Dec 10, 2013
- Sumitomo Electric Industries, Ltd.
- Susumu Yoshimoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing GaN substrate, method of manufacturing epit...
- Patent number 8,471,264
- Issue date Jun 25, 2013
- Sumitomo Electric Industries, Ltd.
- Fumitake Nakanishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor element and epitaxial wafer
- Patent number 8,391,327
- Issue date Mar 5, 2013
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface-emitting laser element, fabrication method thereof, surface...
- Patent number 8,274,088
- Issue date Sep 25, 2012
- Sumitomo Electric Industries, Ltd
- Hideki Matsubara
- B82 - NANO-TECHNOLOGY
Information Patent Grant
GaN substrate and light-emitting device
- Patent number 8,253,162
- Issue date Aug 28, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor substrate, semiconductor device, and process...
- Patent number 8,242,498
- Issue date Aug 14, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming quantum well structure and method for manufactur...
- Patent number 8,173,458
- Issue date May 8, 2012
- Sumitomo Electric Industries, Ltd
- Yohei Enya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming quantum well structure and method for manufactur...
- Patent number 8,124,430
- Issue date Feb 28, 2012
- Sumitomo Electric Industries, Ltd
- Yohei Enya
Information Patent Grant
Group III nitride semiconductor element and epitaxial wafer
- Patent number 8,107,507
- Issue date Jan 31, 2012
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing GaN substrate, method of manufacturing epit...
- Patent number 7,932,114
- Issue date Apr 26, 2011
- Sumitomo Electric Industries, Ltd.
- Fumitake Nakanishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor element and epitaxial wafer
- Patent number 7,873,088
- Issue date Jan 18, 2011
- Sumitomo Electric Industries, Ltd
- Yusuke Yoshizumi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compound semiconductor substrate, semiconductor device, and process...
- Patent number 7,863,609
- Issue date Jan 4, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...
- Publication number 20240426024
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Kazuki NODA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...
- Publication number 20230002931
- Publication date Jan 5, 2023
- Sumitomo Electric Industries, Ltd.
- Koji UEMATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20200176305
- Publication date Jun 4, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20180166325
- Publication date Jun 14, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150349063
- Publication date Dec 3, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140103353
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
- Publication number 20120305933
- Publication date Dec 6, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji NAKAHATA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER
- Publication number 20120104433
- Publication date May 3, 2012
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Nitride Semiconductor Substrate
- Publication number 20120034763
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20110236175
- Publication date Sep 29, 2011
- Sumitomo Electric Industries, Ltd.
- Kaoru Shibata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...
- Publication number 20110163325
- Publication date Jul 7, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Fumitake NAKANISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE AND LIGHT-EMITTING DEVICE
- Publication number 20110108852
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound Semiconductor Substrate, Semiconductor Device, and Process...
- Publication number 20110084363
- Publication date Apr 14, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER
- Publication number 20110079790
- Publication date Apr 7, 2011
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER
- Publication number 20100260224
- Publication date Oct 14, 2010
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESS...
- Publication number 20100224963
- Publication date Sep 9, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE...
- Publication number 20100172390
- Publication date Jul 8, 2010
- Sumitomo Electric Industries, Ltd.
- Hideki Matsubara
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Wafer and Semiconductor Wafer Inspection Method
- Publication number 20100013058
- Publication date Jan 21, 2010
- Sumitomo Electric Industries, Ltd.
- Kaoru Shibata
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR FORMING QUANTUM WELL STRUCTURE AND METHOD FOR MANUFACTUR...
- Publication number 20090258452
- Publication date Oct 15, 2009
- Sumitomo Electric Industries, Ltd.
- Yohei ENYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...
- Publication number 20090093077
- Publication date Apr 9, 2009
- Sumitomo Electric Industries, Ltd.
- Fumitake NAKANISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Laser Device and Manufacturing Method Thereof
- Publication number 20070280318
- Publication date Dec 6, 2007
- OSAKA WORKS OF SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Susumu Yoshimoto
- G02 - OPTICS

Fumitake Nakanishi

Person

Patents Grantslast 30 patents

Gallium arsenide single crystal substrate and method for producing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Semiconductor laser device and manufacturing method thereof

Method of manufacturing GaN substrate, method of manufacturing epit...

Group III nitride semiconductor element and epitaxial wafer

Surface-emitting laser element, fabrication method thereof, surface...

GaN substrate and light-emitting device

Compound semiconductor substrate, semiconductor device, and process...

Method for forming quantum well structure and method for manufactur...

Method for forming quantum well structure and method for manufactur...

Group III nitride semiconductor element and epitaxial wafer

Method of manufacturing GaN substrate, method of manufacturing epit...

Group III nitride semiconductor element and epitaxial wafer

Compound semiconductor substrate, semiconductor device, and process...

Patents Applicationslast 30 patents

GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRO...

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER

Method of Manufacturing Nitride Semiconductor Substrate

PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...

GaN SUBSTRATE AND LIGHT-EMITTING DEVICE

Compound Semiconductor Substrate, Semiconductor Device, and Process...

GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER

GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER

COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESS...

SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE...

Semiconductor Wafer and Semiconductor Wafer Inspection Method

METHOD FOR FORMING QUANTUM WELL STRUCTURE AND METHOD FOR MANUFACTUR...

METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPIT...

Semiconductor Laser Device and Manufacturing Method Thereof