Fung Ka HING

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate structure having lightly doped region
- Patent number 8,952,459
- Issue date Feb 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka Hing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having a composite strain structure, integrated circuit...
- Patent number 8,558,289
- Issue date Oct 15, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,535,998
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka Hing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-strained source/drain structures
- Patent number 8,405,160
- Issue date Mar 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a MOS device with reduced transient enhanced dif...
- Patent number 7,759,210
- Issue date Jul 20, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE STRUCTURE HAVING LIGHTLY DOPED REGION
- Publication number 20130334617
- Publication date Dec 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka HING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND MANUFACTURING METHODS THEREOF
- Publication number 20130130456
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Cheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20110291201
- Publication date Dec 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20110223752
- Publication date Sep 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka HING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING A COMPOSITE STRAIN STRUCTURE, INTEGRATED CIRCUIT...
- Publication number 20110024801
- Publication date Feb 3, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a most device with reduced transient enhanced di...
- Publication number 20080153238
- Publication date Jun 26, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huan-Tsung Huang
- H01 - BASIC ELECTRIC ELEMENTS

Fung Ka HING

Person

Patents Grantslast 30 patents

Gate structure having lightly doped region

Transistors having a composite strain structure, integrated circuit...

Method for fabricating a gate structure

Multi-strained source/drain structures

Method for forming a MOS device with reduced transient enhanced dif...

Patents Applicationslast 30 patents

GATE STRUCTURE HAVING LIGHTLY DOPED REGION

INTEGRATED CIRCUITS AND MANUFACTURING METHODS THEREOF

MULTI-STRAINED SOURCE/DRAIN STRUCTURES

METHOD FOR FABRICATING A GATE STRUCTURE

TRANSISTORS HAVING A COMPOSITE STRAIN STRUCTURE, INTEGRATED CIRCUIT...

Method for forming a most device with reduced transient enhanced di...