Gabriel Cueva

Person

Bedford, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Atomic layer deposition of barrier metal layer for electrode of gal...
- Patent number 12,112,983
- Issue date Oct 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN-on-silicon devices
- Patent number 11,158,575
- Issue date Oct 26, 2021
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with hole barrier layer
- Patent number 9,876,082
- Issue date Jan 23, 2018
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrodes having Ni and Ti meta...
- Patent number 9,136,111
- Issue date Sep 15, 2015
- BAE Systems Information and Electronic Systems Integration Inc.
- Kanin Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reproducible, high yield method for fabricating ultra-short T-gates...
- Patent number 7,943,286
- Issue date May 17, 2011
- BAE Systems Information and Electronic Systems Integration Inc.
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20240178220
- Publication date May 30, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES
- Publication number 20230216471
- Publication date Jul 6, 2023
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...
- Publication number 20220068708
- Publication date Mar 3, 2022
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20220005764
- Publication date Jan 6, 2022
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GaN-ON-SILICON DEVICES
- Publication number 20190371729
- Publication date Dec 5, 2019
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH HOLE BARRIER LAYER
- Publication number 20160322457
- Publication date Nov 3, 2016
- M/A-COM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reproducible, high yield method for fabricating ultra-short T-gates...
- Publication number 20080241757
- Publication date Oct 2, 2008
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS

Gabriel Cueva

Person

Patents Grantslast 30 patents

Atomic layer deposition of barrier metal layer for electrode of gal...

Parasitic capacitance reduction in GaN devices

Parasitic capacitance reduction in GaN-on-silicon devices

Transistor with hole barrier layer

Field effect transistors with gate electrodes having Ni and Ti meta...

Reproducible, high yield method for fabricating ultra-short T-gates...

Patents Applicationslast 30 patents

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES

ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

PARASITIC CAPACITANCE REDUCTION IN GaN-ON-SILICON DEVICES

TRANSISTOR WITH HOLE BARRIER LAYER

Reproducible, high yield method for fabricating ultra-short T-gates...