Gabriel Padron WELLS

Person

Saratoga Springs, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned gate contact formation
- Patent number 9,640,625
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts and methods of fabrication
- Patent number 9,460,963
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES Inc.
- Gabriel Padron Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating stacked nanowire, field-effect transistors
- Patent number 9,443,931
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contacts and methods of fabrication
- Patent number 9,305,785
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating stacked nanowire, field-effect transistors
- Patent number 9,276,064
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with coplanar recessed gate layers and fab...
- Patent number 9,252,238
- Issue date Feb 2, 2016
- Lam Research Corporation
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having replacement metal gates with improved th...
- Patent number 9,147,680
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES, INC.
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATING STACKED NANOWIRE, FIELD-EFFECT TRANSISTORS
- Publication number 20160155800
- Publication date Jun 2, 2016
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...
- Publication number 20160049495
- Publication date Feb 18, 2016
- LAM RESEARCH CORPORATION
- Kristina TREVINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CONTACTS AND METHODS OF FABRICATION
- Publication number 20150380250
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT FORMATION
- Publication number 20150311082
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT OPENINGS OVER FINS OF A SEMICONDUCTOR DEVICE
- Publication number 20150303295
- Publication date Oct 22, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACTS AND METHODS OF FABRICATION
- Publication number 20150279738
- Publication date Oct 1, 2015
- GLOBALFOUNDRIES INC.
- Gabriel Padron Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED TH...
- Publication number 20150021694
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES, INC.
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING INTEGRATED CIRCUITS WITH REDUCED REPLACEMENT ME...
- Publication number 20150024584
- Publication date Jan 22, 2015
- GLOBAL FOUNDRIES, INC.
- Gabriel Padron Wells
- H01 - BASIC ELECTRIC ELEMENTS

Gabriel Padron WELLS

Person

Patents Grantslast 30 patents

Self-aligned gate contact formation

Self-aligned contacts and methods of fabrication

Fabricating stacked nanowire, field-effect transistors

Semiconductor contacts and methods of fabrication

Fabricating stacked nanowire, field-effect transistors

Semiconductor structures with coplanar recessed gate layers and fab...

Integrated circuits having replacement metal gates with improved th...

Patents Applicationslast 30 patents

FABRICATING STACKED NANOWIRE, FIELD-EFFECT TRANSISTORS

SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...

SEMICONDUCTOR CONTACTS AND METHODS OF FABRICATION

SELF-ALIGNED GATE CONTACT FORMATION

SELF-ALIGNED CONTACT OPENINGS OVER FINS OF A SEMICONDUCTOR DEVICE

SELF-ALIGNED CONTACTS AND METHODS OF FABRICATION

INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED TH...

METHODS FOR FORMING INTEGRATED CIRCUITS WITH REDUCED REPLACEMENT ME...