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Gabriella Borionetti
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Novara, IT
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last 30 patents
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Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
Patent number
8,026,145
Issue date
Sep 27, 2011
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Arsenic and phosphorus doped silicon wafer substrates having intrin...
Patent number
7,485,928
Issue date
Feb 3, 2009
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for detecting sources of contamination in silicon using a co...
Patent number
5,418,172
Issue date
May 23, 1995
MEMC Electronic Materials S.p.A.
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRIN...
Publication number
20090130824
Publication date
May 21, 2009
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Application
Arsenic and phosphorus doped silicon wafer substrates having intrin...
Publication number
20070105279
Publication date
May 10, 2007
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH