Ganesh Hegde

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic and atomic structure computation utilizing machine learning
- Patent number 11,586,982
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Generative structure-property inverse computational co-design of ma...
- Patent number 11,537,898
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Interconnects having long grains and methods of manufacturing the same
- Patent number 11,289,419
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of screening materials using forward conducting modes
- Patent number 11,087,055
- Issue date Aug 10, 2021
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low resistivity interconnects with doped barrier layer for integrat...
- Patent number 11,043,454
- Issue date Jun 22, 2021
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a reverse engineering resistant har...
- Patent number 10,916,513
- Issue date Feb 9, 2021
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Interconnects having long grains and methods of manufacturing the same
- Patent number 10,763,207
- Issue date Sep 1, 2020
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k dielectric pore sealant and metal-diffusion barrier formed by...
- Patent number 10,510,665
- Issue date Dec 17, 2019
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing reacted metal source-drain stressors for tensil...
- Patent number 10,510,886
- Issue date Dec 17, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a reverse-engineering resistant har...
- Patent number 10,381,315
- Issue date Aug 13, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Physical modeling of electronic devices/systems
- Patent number 10,311,179
- Issue date Jun 4, 2019
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming semiconductor devices including conductive conta...
- Patent number 10,297,673
- Issue date May 21, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to achieve large strain in NS without addition...
- Patent number 10,283,638
- Issue date May 7, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physical modeling of electronic devices/systems
- Patent number 10,061,877
- Issue date Aug 28, 2018
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Physical modeling of electronic devices/systems
- Patent number 9,858,365
- Issue date Jan 2, 2018
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structure and method to achieve compressively strained Si NS
- Patent number 9,831,323
- Issue date Nov 28, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxysilicate diffusion barriers for damascene metallization wi...
- Patent number 9,728,502
- Issue date Aug 8, 2017
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating metal source-drain stressor in a MOS device channel
- Patent number 9,634,140
- Issue date Apr 25, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity damascene interconnect
- Patent number 9,613,907
- Issue date Apr 4, 2017
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GENERATIVE STRUCTURE-PROPERTY INVERSE COMPUTATIONAL CO-DESIGN OF MA...
- Publication number 20210103822
- Publication date Apr 8, 2021
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC AND ATOMIC STRUCTURE COMPUTATION UTILIZING MACHINE LEARNING
- Publication number 20210081834
- Publication date Mar 18, 2021
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTERCONNECTS HAVING LONG GRAINS AND METHODS OF MANUFACTURING THE SAME
- Publication number 20200357740
- Publication date Nov 12, 2020
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY INTERCONNECTS FOR INTEGRATED CIRCUIT AND METHODS OF...
- Publication number 20200235055
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...
- Publication number 20190318998
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SCREENING MATERIALS USING FORWARD CONDUCTING MODES
- Publication number 20190155977
- Publication date May 23, 2019
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTERCONNECTS HAVING LONG GRAINS AND METHODS OF MANUFACTURING THE SAME
- Publication number 20190157200
- Publication date May 23, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...
- Publication number 20190148312
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD OF PROVIDING REACTED METAL SOURCE-DRAIN STRESSORS FOR TENSIL...
- Publication number 20190131451
- Publication date May 2, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS
- Publication number 20180373826
- Publication date Dec 27, 2018
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS
- Publication number 20180121583
- Publication date May 3, 2018
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO ACHIEVE COMPRESSIVELY STRAINED SI NS
- Publication number 20170263728
- Publication date Sep 14, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. KITTL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO ACHIEVE LARGE STRAIN IN NS WITHOUT ADDITION...
- Publication number 20170040455
- Publication date Feb 9, 2017
- Jorge A. KITTL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K DIELECTRIC PORE SEALANT AND METAL-DIFFUSION BARRIER FORMED BY...
- Publication number 20160148870
- Publication date May 26, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WI...
- Publication number 20160133513
- Publication date May 12, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING METAL SOURCE-DRAIN STRESSOR IN A MOS DEVICE CHANNEL
- Publication number 20160133745
- Publication date May 12, 2016
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE CONTA...
- Publication number 20160104787
- Publication date Apr 14, 2016
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY DAMASCENE INTERCONNECT
- Publication number 20160035675
- Publication date Feb 4, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS
- Publication number 20150120259
- Publication date Apr 30, 2015
- Purdue Research Foundation
- Gerhard Klimeck
- G06 - COMPUTING CALCULATING COUNTING

Ganesh Hegde

Person

Patents Grantslast 30 patents

Electronic and atomic structure computation utilizing machine learning

Generative structure-property inverse computational co-design of ma...

Interconnects having long grains and methods of manufacturing the same

Method of screening materials using forward conducting modes

Low resistivity interconnects with doped barrier layer for integrat...

Method and system for providing a reverse engineering resistant har...

Interconnects having long grains and methods of manufacturing the same

Low-k dielectric pore sealant and metal-diffusion barrier formed by...

Method of providing reacted metal source-drain stressors for tensil...

Method and system for providing a reverse-engineering resistant har...

Physical modeling of electronic devices/systems

Methods of forming semiconductor devices including conductive conta...

Structure and method to achieve large strain in NS without addition...

Physical modeling of electronic devices/systems

Physical modeling of electronic devices/systems

Structure and method to achieve compressively strained Si NS

Metal oxysilicate diffusion barriers for damascene metallization wi...

Fabricating metal source-drain stressor in a MOS device channel

Low resistivity damascene interconnect

Patents Applicationslast 30 patents

GENERATIVE STRUCTURE-PROPERTY INVERSE COMPUTATIONAL CO-DESIGN OF MA...

ELECTRONIC AND ATOMIC STRUCTURE COMPUTATION UTILIZING MACHINE LEARNING

INTERCONNECTS HAVING LONG GRAINS AND METHODS OF MANUFACTURING THE SAME

LOW RESISTIVITY INTERCONNECTS FOR INTEGRATED CIRCUIT AND METHODS OF...

METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...

METHOD OF SCREENING MATERIALS USING FORWARD CONDUCTING MODES

INTERCONNECTS HAVING LONG GRAINS AND METHODS OF MANUFACTURING THE SAME

METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...

METHOD OF PROVIDING REACTED METAL SOURCE-DRAIN STRESSORS FOR TENSIL...

PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS

PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS

STRUCTURE AND METHOD TO ACHIEVE COMPRESSIVELY STRAINED SI NS

STRUCTURE AND METHOD TO ACHIEVE LARGE STRAIN IN NS WITHOUT ADDITION...

LOW-K DIELECTRIC PORE SEALANT AND METAL-DIFFUSION BARRIER FORMED BY...

METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WI...

FABRICATING METAL SOURCE-DRAIN STRESSOR IN A MOS DEVICE CHANNEL

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE CONTA...

LOW RESISTIVITY DAMASCENE INTERCONNECT

PHYSICAL MODELING OF ELECTRONIC DEVICES/SYSTEMS