Ganesh Shankar Samudra

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of strained Si channel and Si1-xGex source/drain structur...
- Patent number 7,892,905
- Issue date Feb 22, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form source and drain regions over doped de...
- Patent number 7,888,752
- Issue date Feb 15, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- King Jien Chui
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structure and method to form source and drain regions over doped de...
- Patent number 7,202,133
- Issue date Apr 10, 2007
- Chartered Semiconductor Manufacturing, Ltd.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for a performance enhanced MOSFET with self-aligned, r...
- Patent number 7,091,092
- Issue date Aug 15, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Sneedharan Pillai Sneelal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having enhanced breakdown voltage
- Patent number 6,853,033
- Issue date Feb 8, 2005
- National University of Singapore
- Yung Chii Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process flow for a performance enhanced MOSFET with self-aligned, r...
- Patent number 6,391,720
- Issue date May 21, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Sneedharan Pillai Sneelal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to achieve uniform groove depth in a silicon substrate
- Patent number 6,284,606
- Issue date Sep 4, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Ganesh S. Samudra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and method to form source and drain regions over doped de...
- Publication number 20070178652
- Publication date Aug 2, 2007
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of strained Si channel and Si1-xGex source/drain structur...
- Publication number 20070032026
- Publication date Feb 8, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device with a strained channel
- Publication number 20060030094
- Publication date Feb 9, 2006
- Chartered Semiconductor Manufacturing LTD.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to form source and drain regions over doped de...
- Publication number 20050156253
- Publication date Jul 21, 2005
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET having enhanced breakdown voltage
- Publication number 20030006453
- Publication date Jan 9, 2003
- Yung Chii Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process flow for a performance enhanced MOSFET with self-aligned, r...
- Publication number 20020094622
- Publication date Jul 18, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Sneedharan Pillai Sneelal
- H01 - BASIC ELECTRIC ELEMENTS

Ganesh Shankar Samudra

Person

Patents Grantslast 30 patents

Formation of strained Si channel and Si1-xGex source/drain structur...

Structure and method to form source and drain regions over doped de...

Structure and method to form source and drain regions over doped de...

Process flow for a performance enhanced MOSFET with self-aligned, r...

Power MOSFET having enhanced breakdown voltage

Process flow for a performance enhanced MOSFET with self-aligned, r...

Process to achieve uniform groove depth in a silicon substrate

Patents Applicationslast 30 patents

Structure and method to form source and drain regions over doped de...

Formation of strained Si channel and Si1-xGex source/drain structur...

Method of manufacturing a semiconductor device with a strained channel

Structure and method to form source and drain regions over doped de...

Power MOSFET having enhanced breakdown voltage

Process flow for a performance enhanced MOSFET with self-aligned, r...