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Shanghai, CN
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Patents Grants
last 30 patents
Information
Patent Grant
Method for manufacturing a semiconductor device having a fin locate...
Patent number
10,236,216
Issue date
Mar 19, 2019
Semiconductor Manufacturing International (Shanghai) Corp.
Hai Zhao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fin field-effect transistor and fabrication method thereof
Patent number
10,121,880
Issue date
Nov 6, 2018
Semiconductor Manufacturing International (Shanghai) Corporation
Gang Mao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods for high-k metal gate CMOS with SiC and SiGe source/drain r...
Patent number
9,595,585
Issue date
Mar 14, 2017
Semiconductor Manufacturing International (Beijing) Corporation
Gang Mao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to eliminate Cu dislocation for reliability and yield
Patent number
7,897,508
Issue date
Mar 1, 2011
Semiconductor Manufacturing International (Shanghai) Corporation
Wen Yue Zheng
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Publication number
20190164845
Publication date
May 30, 2019
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (Shangha i) CORPORATION
Hai Zhao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Publication number
20180108572
Publication date
Apr 19, 2018
Semiconductor Manufacturing International (Shanghai) Corporation
Hai Zhao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
Publication number
20170200810
Publication date
Jul 13, 2017
Semiconductor Manufacturing International (Shanghai) Corporation
GANG MAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHODS FOR HIGH-K METAL GATE CMOS WITH SiC AND SiGe SOURCE/DRAIN R...
Publication number
20160087040
Publication date
Mar 24, 2016
Semiconductor Manufacturing International (Beijing) Corporation
GANG MAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MULTI-WORKING VOLTAGES CMOS DEVICE WITH SINGLE GATE OXIDE LAYER THI...
Publication number
20130049119
Publication date
Feb 28, 2013
SHANGHAI HUALI MICROELECTRONICS CORPORATION
Xiaolu HUANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR SUPPRESSING SHORT CHANNEL EFFECT OF CMOS DEVICE
Publication number
20130020652
Publication date
Jan 24, 2013
SHANGHAI HUALI MICROELECTRONICS CORPORATION
Xiaolu HUANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method to eliminate Cu dislocation for reliability and yield
Publication number
20070134913
Publication date
Jun 14, 2007
Semiconductor Manufacturing International (Shanghai) Corporation
Wen Yue Zheng
H01 - BASIC ELECTRIC ELEMENTS