Gang Xue

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for fabricating memory cells having fin structures with sem...
- Patent number 8,987,092
- Issue date Mar 24, 2015
- Spansion LLC
- Inkuk Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar cell ONO cut using in-situ polymer deposition and etch
- Patent number 8,790,530
- Issue date Jul 29, 2014
- Spansion LLC
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sonos memory cells having non-uniform tunnel oxide and methods for...
- Patent number 8,742,496
- Issue date Jun 3, 2014
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device employing polysilicon scaling
- Patent number 8,637,918
- Issue date Jan 28, 2014
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned SI rich nitride charge trap layer isolation for charge...
- Patent number 8,551,858
- Issue date Oct 8, 2013
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory cells having non-uniform tunnel oxide and methods for...
- Patent number 8,487,373
- Issue date Jul 16, 2013
- Spanion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a memory cell having a top oxide spacer
- Patent number 8,384,146
- Issue date Feb 26, 2013
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a memory cell having a top oxide spacer
- Patent number 8,202,779
- Issue date Jun 19, 2012
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device employing polysilicon scaling
- Patent number 8,076,199
- Issue date Dec 13, 2011
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...
- Publication number 20140001537
- Publication date Jan 2, 2014
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...
- Publication number 20130277732
- Publication date Oct 24, 2013
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A MEMORY CELL HAVING A TOP OXIDE SPACER
- Publication number 20120181601
- Publication date Jul 19, 2012
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE EMPLOYING POLYSILICON SCALING
- Publication number 20120056260
- Publication date Mar 8, 2012
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A MEMORY CELL HAVING A TOP OXIDE SPACER
- Publication number 20110233647
- Publication date Sep 29, 2011
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR CELL ON CUT USING IN-SITU POLYMER DEPOSITION AND ETCH
- Publication number 20110195578
- Publication date Aug 11, 2011
- SPANSION LLC
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...
- Publication number 20100276746
- Publication date Nov 4, 2010
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE EMPLOYING POLYSILICON SCALING
- Publication number 20100207191
- Publication date Aug 19, 2010
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...
- Publication number 20100133646
- Publication date Jun 3, 2010
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...
- Publication number 20090269916
- Publication date Oct 29, 2009
- Inkuk KANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods for fabricating memory cells having fin structures with sem...

Planar cell ONO cut using in-situ polymer deposition and etch

Sonos memory cells having non-uniform tunnel oxide and methods for...

Method and device employing polysilicon scaling

Self-aligned SI rich nitride charge trap layer isolation for charge...

SONOS memory cells having non-uniform tunnel oxide and methods for...

Methods for forming a memory cell having a top oxide spacer

Methods for forming a memory cell having a top oxide spacer

Method and device employing polysilicon scaling

Patents Applicationslast 30 patents

SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...

SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...

METHODS FOR FORMING A MEMORY CELL HAVING A TOP OXIDE SPACER

METHOD AND DEVICE EMPLOYING POLYSILICON SCALING

METHODS FOR FORMING A MEMORY CELL HAVING A TOP OXIDE SPACER

PLANAR CELL ON CUT USING IN-SITU POLYMER DEPOSITION AND ETCH

SONOS MEMORY CELLS HAVING NON-UNIFORM TUNNEL OXIDE AND METHODS FOR...

METHOD AND DEVICE EMPLOYING POLYSILICON SCALING

SELF-ALIGNED SI RICH NITRIDE CHARGE TRAP LAYER ISOLATION FOR CHARGE...

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEM...