Gangfeng Ye

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
GaN lateral vertical HJFET with source-P block contact
- Patent number 11,239,321
- Issue date Feb 1, 2022
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,971,587
- Issue date Apr 6, 2021
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,566,439
- Issue date Feb 18, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical HJFET with source-P block contact
- Patent number 10,535,740
- Issue date Jan 14, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN lateral vertical JFET with regrown channel and dielectric gate
- Patent number 10,535,741
- Issue date Jan 14, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,347,736
- Issue date Jul 9, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 9,368,582
- Issue date Jun 14, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20200273965
- Publication date Aug 27, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical HJFET with Source-P Block Contact
- Publication number 20200119148
- Publication date Apr 16, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
- Publication number 20200111878
- Publication date Apr 9, 2020
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20190348522
- Publication date Nov 14, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical HJFET with Source-P Block Contact
- Publication number 20180219071
- Publication date Aug 2, 2018
- Hua Su Dian Li (Su Zhou) Co. Ltd.
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate
- Publication number 20180219072
- Publication date Aug 2, 2018
- Hua Su Dian Li (Su Zhou) Co. Ltd.
- Gangfeng Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20180166556
- Publication date Jun 14, 2018
- Nexgen Power Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20170133481
- Publication date May 11, 2017
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20150123138
- Publication date May 7, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Gangfeng Ye

Person

Patents Grantslast 30 patents

GaN lateral vertical HJFET with source-P block contact

GaN lateral vertical JFET with regrown channel and dielectric gate

High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

GaN lateral vertical HJFET with source-P block contact

GaN lateral vertical JFET with regrown channel and dielectric gate

High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

Patents Applicationslast 30 patents

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

GaN Lateral Vertical HJFET with Source-P Block Contact

GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

GaN Lateral Vertical HJFET with Source-P Block Contact

GaN Lateral Vertical JFET with Regrown Channel and Dielectric Gate

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES