Ganming Qin

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with integrated short circuit protection
- Patent number 12,170,254
- Issue date Dec 17, 2024
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,631,763
- Issue date Apr 18, 2023
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mirror device structure for power MOSFET and method of manufacture
- Patent number 11,489,072
- Issue date Nov 1, 2022
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,329,150
- Issue date May 10, 2022
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mirror device structure for power MOSFET and method of manufacture
- Patent number 11,004,970
- Issue date May 11, 2021
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of super-junction power semiconductor device
- Patent number 10,811,502
- Issue date Oct 20, 2020
- NXP USA, INC.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power MOSFET structure with a cathode short structure
- Patent number 10,672,902
- Issue date Jun 2, 2020
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bi-directional switches and method for making same
- Patent number 10,644,146
- Issue date May 5, 2020
- NXP USA, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,431,678
- Issue date Oct 1, 2019
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power MOSFET structure with a cathode short structure
- Patent number 10,297,684
- Issue date May 21, 2019
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor device and method for forming
- Patent number 10,153,357
- Issue date Dec 11, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,103,257
- Issue date Oct 16, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 10,074,743
- Issue date Sep 11, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 9,680,003
- Issue date Jun 13, 2017
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for trench gate FET
- Patent number 9,553,184
- Issue date Jan 24, 2017
- NXP USA, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded trench semiconductor devices and related fabrication methods
- Patent number 9,515,178
- Issue date Dec 6, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,419,128
- Issue date Aug 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,397,213
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,368,620
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device termination structures and methods
- Patent number 9,362,394
- Issue date Jun 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bidirectional MOSFET with suppressed bipolar snapback and method of...
- Patent number 9,324,800
- Issue date Apr 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Pon Sung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET current sense structure and method
- Patent number 9,293,535
- Issue date Mar 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,178,027
- Issue date Nov 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with source recess etch
- Patent number 8,895,394
- Issue date Nov 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a vertical MOS transistor
- Patent number 8,143,126
- Issue date Mar 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage TMOS semiconductor device with low gate charge structu...
- Patent number 8,030,153
- Issue date Oct 4, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power MOSFET
- Patent number 7,602,014
- Issue date Oct 13, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power MOSFET
- Patent number 7,378,317
- Issue date May 27, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field emission device having an improved ballast resistor
- Patent number 6,424,083
- Issue date Jul 23, 2002
- Motorola, Inc.
- Gordon Tam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION
- Publication number 20240113045
- Publication date Apr 4, 2024
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...
- Publication number 20220393004
- Publication date Dec 8, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20220231161
- Publication date Jul 21, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20210320200
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20210226054
- Publication date Jul 22, 2021
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20200373426
- Publication date Nov 26, 2020
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BI-DIRECTIONAL SWITCHES AND METHOD FOR MAKING SAME
- Publication number 20200152786
- Publication date May 14, 2020
- NXP USA, Inc.
- Moaniss ZITOUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE
- Publication number 20190237571
- Publication date Aug 1, 2019
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination Design For Trench Superjunction Power MOSFET
- Publication number 20190148541
- Publication date May 16, 2019
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE
- Publication number 20190103484
- Publication date Apr 4, 2019
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20170288051
- Publication date Oct 5, 2017
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20160284838
- Publication date Sep 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- GANMING QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT
- Publication number 20160064556
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR TRENCH GATE FET
- Publication number 20160064546
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF
- Publication number 20160049508
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE TERMINATION STRUCTURES AND METHODS
- Publication number 20150372130
- Publication date Dec 24, 2015
- Freescale Semiconductor Inc.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD
- Publication number 20140070313
- Publication date Mar 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET with Source Recess Etch
- Publication number 20130344667
- Publication date Dec 26, 2013
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A VERTICAL MOS TRANSISTOR
- Publication number 20110275187
- Publication date Nov 10, 2011
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TMOS SEMICONDUCTOR DEVICE WITH LOW GATE CHARGE STRUCTU...
- Publication number 20090108339
- Publication date Apr 30, 2009
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION POWER MOSFET
- Publication number 20080197409
- Publication date Aug 21, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction power MOSFET
- Publication number 20070132020
- Publication date Jun 14, 2007
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS

Ganming Qin

Person

Patents Grantslast 30 patents

Transistor with integrated short circuit protection

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Method of manufacture of super-junction power semiconductor device

Bidirectional power MOSFET structure with a cathode short structure

Vertical bi-directional switches and method for making same

Termination design for trench superjunction power MOSFET

Bidirectional power MOSFET structure with a cathode short structure

Superjunction power semiconductor device and method for forming

Termination design for trench superjunction power MOSFET

Trench MOSFET shield poly contact

Trench MOSFET shield poly contact

Edge termination for trench gate FET

Shielded trench semiconductor devices and related fabrication methods

Bidirectional trench FET with gate-based resurf

Trench gate FET with self-aligned source contact

Trench gate FET with self-aligned source contact

Power device termination structures and methods

Bidirectional MOSFET with suppressed bipolar snapback and method of...

Power MOSFET current sense structure and method

Bidirectional trench FET with gate-based resurf

Trench FET with source recess etch

Method for forming a vertical MOS transistor

High voltage TMOS semiconductor device with low gate charge structu...

Superjunction power MOSFET

Superjunction power MOSFET

Field emission device having an improved ballast resistor

Patents Applicationslast 30 patents

TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION

TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE

MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE

VERTICAL BI-DIRECTIONAL SWITCHES AND METHOD FOR MAKING SAME

BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE

Termination Design For Trench Superjunction Power MOSFET

BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE

TRENCH MOSFET SHIELD POLY CONTACT

TRENCH MOSFET SHIELD POLY CONTACT

TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT

EDGE TERMINATION FOR TRENCH GATE FET

BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF

POWER DEVICE TERMINATION STRUCTURES AND METHODS

POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD

Trench FET with Source Recess Etch

METHOD FOR FORMING A VERTICAL MOS TRANSISTOR

HIGH VOLTAGE TMOS SEMICONDUCTOR DEVICE WITH LOW GATE CHARGE STRUCTU...

SUPERJUNCTION POWER MOSFET

Superjunction power MOSFET