Gary Chen

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Shielded gate trench MOS with improved source pickup layout
- Patent number 9,252,265
- Issue date Feb 2, 2016
- Alpha and Omega Semiconductor Incorporated
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOS with improved source pickup layout
- Patent number 8,994,101
- Issue date Mar 31, 2015
- Alpha and Omega Semiconductor Incorporated
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split dual gate field effect transistor
- Patent number 8,614,487
- Issue date Dec 24, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surrounding stacked gate multi-gate FET structure nonvolatile memor...
- Patent number 8,513,727
- Issue date Aug 20, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D electrically programmable and erasable single-transistor non-vo...
- Patent number 8,471,323
- Issue date Jun 25, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- De Yuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shielded gate trench MOS with improved sou...
- Patent number 8,431,457
- Issue date Apr 30, 2013
- Alpha and Omega Semiconductor Incorporated
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making split dual gate field effect transistor
- Patent number 7,582,517
- Issue date Sep 1, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT
- Publication number 20150194522
- Publication date Jul 9, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT
- Publication number 20130228860
- Publication date Sep 5, 2013
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT
- Publication number 20110220990
- Publication date Sep 15, 2011
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURROUNDING STACKED GATE MULTI-GATE FET STRUCTURE NONVOLATILE MEMOR...
- Publication number 20110163369
- Publication date Jul 7, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D ELECTRICALLY PROGRAMMABLE AND ERASABLE SINGLE-TRANSISTOR NON-VO...
- Publication number 20110084327
- Publication date Apr 14, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- DE YUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split dual gate field effect transistor
- Publication number 20070181917
- Publication date Aug 9, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Shielded gate trench MOS with improved source pickup layout

Shielded gate trench MOS with improved source pickup layout

Split dual gate field effect transistor

Surrounding stacked gate multi-gate FET structure nonvolatile memor...

3-D electrically programmable and erasable single-transistor non-vo...

Method for fabricating a shielded gate trench MOS with improved sou...

Method for making split dual gate field effect transistor

Patents Applicationslast 30 patents

SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT

SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT

SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT

SURROUNDING STACKED GATE MULTI-GATE FET STRUCTURE NONVOLATILE MEMOR...

3-D ELECTRICALLY PROGRAMMABLE AND ERASABLE SINGLE-TRANSISTOR NON-VO...

Split dual gate field effect transistor