Gary Dolny

Person

Luzerne, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET transistors with hybrid contact
- Patent number 11,646,371
- Issue date May 9, 2023
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 11,522,053
- Issue date Dec 6, 2022
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for LDMOS and other MOS transistors with hybrid contact
- Patent number 11,322,611
- Issue date May 3, 2022
- Silicet, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for LDMOS and other MOS transistors with hybrid contact
- Patent number 10,892,362
- Issue date Jan 12, 2021
- Silicet, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for a power transistor having a Schottky or Sch...
- Patent number 10,510,869
- Issue date Dec 17, 2019
- SILICET, LLC
- Gary M. Dolny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for a power transistor having a schottky or sch...
- Patent number 9,947,787
- Issue date Apr 17, 2018
- SILICET, LLC
- Gary M. Dolny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor
- Patent number 8,884,365
- Issue date Nov 11, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate runner and field implant termination for trench dev...
- Patent number 8,872,278
- Issue date Oct 28, 2014
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate field effect transistors
- Patent number 8,803,207
- Issue date Aug 12, 2014
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming trench-gate field effect transisto...
- Patent number 8,441,069
- Issue date May 14, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having a top-side drain using a sinker t...
- Patent number 8,148,233
- Issue date Apr 3, 2012
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-shielded semiconductor device
- Patent number 8,148,749
- Issue date Apr 3, 2012
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming inter-poly dielectric (IPD) layers in power semi...
- Patent number 8,143,123
- Issue date Mar 27, 2012
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor devices and methods for making the same
- Patent number 8,129,778
- Issue date Mar 6, 2012
- Fairchild Semiconductor Corporation
- Suku Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged semiconductor device architecture
- Patent number 8,124,981
- Issue date Feb 28, 2012
- Fairchild Semiconductor Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lateral trench gate FET with direct source-drain...
- Patent number 8,097,510
- Issue date Jan 17, 2012
- Fairchild Semiconductor Corporation
- Chang-ki Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN junction and MOS capacitor hybrid resurf transistor
- Patent number 8,076,722
- Issue date Dec 13, 2011
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench-gate field effect transistors
- Patent number 8,043,913
- Issue date Oct 25, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET with substrate drain connection
- Patent number 8,039,897
- Issue date Oct 18, 2011
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having a top-side drain using a sinker t...
- Patent number 8,026,558
- Issue date Sep 27, 2011
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor with channel enhancement region...
- Patent number 7,923,776
- Issue date Apr 12, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench gate FET with direct source-drain current path
- Patent number 7,804,150
- Issue date Sep 28, 2010
- Fairchild Semiconductor Corporation
- Chang-ki Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN junction and MOS capacitor hybrid RESURF transistor
- Patent number 7,795,671
- Issue date Sep 14, 2010
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bandgap engineered MOS-gated power transistors
- Patent number 7,755,137
- Issue date Jul 13, 2010
- Fairchild Semiconductor Corporation
- Gary Dolny
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Power transistor with trench sinker for contacting the backside
- Patent number 7,732,876
- Issue date Jun 8, 2010
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistors and methods of forming the same
- Patent number 7,504,303
- Issue date Mar 17, 2009
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Patent number 7,436,021
- Issue date Oct 14, 2008
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with improved body to gate alignment
- Patent number 7,416,948
- Issue date Aug 26, 2008
- Fairchild Semiconductor Corporation
- Nathan L. Kraft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having a top-side drain using a sinker t...
- Patent number 7,352,036
- Issue date Apr 1, 2008
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20230054381
- Publication date Feb 23, 2023
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TRANSISTORS WITH HYBRID CONTACT
- Publication number 20220254914
- Publication date Aug 11, 2022
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20220181444
- Publication date Jun 9, 2022
- Silicet, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR LDMOS AND OTHER MOS TRANSISTORS WITH HYBRID CONTACT
- Publication number 20210134999
- Publication date May 6, 2021
- Silicet, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...
- Publication number 20180212041
- Publication date Jul 26, 2018
- Silicet, LLC
- Gary M. DOLNY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...
- Publication number 20170323970
- Publication date Nov 9, 2017
- Silicet, LLC
- Gary M. DOLNY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20130248991
- Publication date Sep 26, 2013
- Fairchild Semiconductor Corporation
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEV...
- Publication number 20130099311
- Publication date Apr 25, 2013
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor Power Device Having A Top-side Drain Using A Sinker T...
- Publication number 20120153384
- Publication date Jun 21, 2012
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20120104490
- Publication date May 3, 2012
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DRAIN MOSFET WITH SUBSTRATE DRAIN CONNECTION
- Publication number 20120018803
- Publication date Jan 26, 2012
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Power Device Having a Top-side Drain Using a Sinker T...
- Publication number 20110260241
- Publication date Oct 27, 2011
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistors
- Publication number 20110212586
- Publication date Sep 1, 2011
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trench-Gate Field Effect Transistors
- Publication number 20110177662
- Publication date Jul 21, 2011
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Making the Same
- Publication number 20110127601
- Publication date Jun 2, 2011
- Suku Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Lateral Trench Gate FET with Direct Source-Drain...
- Publication number 20110014760
- Publication date Jan 20, 2011
- Chang-ki Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR
- Publication number 20100323485
- Publication date Dec 23, 2010
- Fairchild Semiconductor Corporation
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...
- Publication number 20100258862
- Publication date Oct 14, 2010
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Power Device Having a Top-side Drain Using a Sinker T...
- Publication number 20100237415
- Publication date Sep 23, 2010
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures and Methods for Improving Trench-Shielded Semiconductor...
- Publication number 20100207205
- Publication date Aug 19, 2010
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL MOSFET WITH SUBSTRATE DRAIN CONNECTION
- Publication number 20100155839
- Publication date Jun 24, 2010
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE
- Publication number 20090302327
- Publication date Dec 10, 2009
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20090230465
- Publication date Sep 17, 2009
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistor Using Spacers
- Publication number 20090111231
- Publication date Apr 30, 2009
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semi...
- Publication number 20080199997
- Publication date Aug 21, 2008
- Thomas E. Grebs
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR
- Publication number 20080164506
- Publication date Jul 10, 2008
- Steven Leibiger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched Shield Gate Power Semiconductor Devices and Methods of Man...
- Publication number 20080150020
- Publication date Jun 26, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power Transistor with Trench Sinker for Contacting the Backside
- Publication number 20080142883
- Publication date Jun 19, 2008
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices Having Termination Structures and Metho...
- Publication number 20080135931
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Person

Patents Grantslast 30 patents

LDMOS with self-aligned body and hybrid source

MOSFET transistors with hybrid contact

LDMOS with self-aligned body and hybrid source

Methods for LDMOS and other MOS transistors with hybrid contact

Devices for LDMOS and other MOS transistors with hybrid contact

Devices and methods for a power transistor having a Schottky or Sch...

Devices and methods for a power transistor having a schottky or sch...

Trench-gate field effect transistor

Integrated gate runner and field implant termination for trench dev...

Shielded gate field effect transistors

Structure and method for forming trench-gate field effect transisto...

Semiconductor power device having a top-side drain using a sinker t...

Trench-shielded semiconductor device

Methods of forming inter-poly dielectric (IPD) layers in power semi...

Semiconductor devices and methods for making the same

Rugged semiconductor device architecture

Method of forming lateral trench gate FET with direct source-drain...

PN junction and MOS capacitor hybrid resurf transistor

Method of forming trench-gate field effect transistors

Lateral MOSFET with substrate drain connection

Semiconductor power device having a top-side drain using a sinker t...

Trench-gate field effect transistor with channel enhancement region...

Lateral trench gate FET with direct source-drain current path

PN junction and MOS capacitor hybrid RESURF transistor

Bandgap engineered MOS-gated power transistors

Power transistor with trench sinker for contacting the backside

Trench-gate field effect transistors and methods of forming the same

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Trench FET with improved body to gate alignment

Semiconductor power device having a top-side drain using a sinker t...

Patents Applicationslast 30 patents

LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE

MOSFET TRANSISTORS WITH HYBRID CONTACT

LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE

METHODS FOR LDMOS AND OTHER MOS TRANSISTORS WITH HYBRID CONTACT

DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...

DEVICES AND METHODS FOR A POWER TRANSISTOR HAVING A SCHOTTKY OR SCH...

STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR

INTEGRATED GATE RUNNER AND FIELD IMPLANT TERMINATION FOR TRENCH DEV...

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

Semiconductor Power Device Having A Top-side Drain Using A Sinker T...

Trench-Gate Field Effect Transistors and Methods of Forming the Same

LATERAL DRAIN MOSFET WITH SUBSTRATE DRAIN CONNECTION

Semiconductor Power Device Having a Top-side Drain Using a Sinker T...

Method for Forming Shielded Gate Field Effect Transistors

Method of Forming Trench-Gate Field Effect Transistors

Semiconductor Devices and Methods for Making the Same

Method of Forming Lateral Trench Gate FET with Direct Source-Drain...

PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR

TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...

Semiconductor Power Device Having a Top-side Drain Using a Sinker T...

Structures and Methods for Improving Trench-Shielded Semiconductor...

LATERAL MOSFET WITH SUBSTRATE DRAIN CONNECTION

RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE

Trench-Gate Field Effect Transistors and Methods of Forming the Same

Method for Forming Shielded Gate Field Effect Transistor Using Spacers

Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semi...

PN JUNCTION AND MOS CAPACITOR HYBRID RESURF TRANSISTOR

Trenched Shield Gate Power Semiconductor Devices and Methods of Man...

Power Transistor with Trench Sinker for Contacting the Backside

Power Semiconductor Devices Having Termination Structures and Metho...