Gaurav Thareja

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pillar capacitor and method of fabricating such
- Patent number 12,200,941
- Issue date Jan 14, 2025
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of ferroelectric memory devices having stacked electrod...
- Patent number 12,137,574
- Issue date Nov 5, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor integrated with logic
- Patent number 12,113,097
- Issue date Oct 8, 2024
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Majority gate based low power ferroelectric based adder with reset...
- Patent number 12,088,297
- Issue date Sep 10, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power non-linear polar material based threshold logic gate mult...
- Patent number 11,863,183
- Issue date Jan 2, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,848,386
- Issue date Dec 19, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,837,664
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ferroelectric memory devices with transistors
- Patent number 11,758,738
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,757,043
- Issue date Sep 12, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap formation processes
- Patent number 11,735,467
- Issue date Aug 22, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal high concentration boron doping of semiconductors
- Patent number 11,705,335
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a ferroelectric memory device with a transistor
- Patent number 11,641,747
- Issue date May 2, 2023
- Kepler Computing Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for metal silicide deposition
- Patent number 11,615,986
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor integrated with logic
- Patent number 11,522,044
- Issue date Dec 6, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for using and forming low power ferroelectric based majority...
- Patent number 11,502,691
- Issue date Nov 15, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Pillar capacitor and method of fabricating such
- Patent number 11,482,528
- Issue date Oct 25, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,469,327
- Issue date Oct 11, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact over active regions
- Patent number 11,462,411
- Issue date Oct 4, 2022
- Applied Materials, Inc.
- Gaurav Thareja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,444,203
- Issue date Sep 13, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor and method of patterning such
- Patent number 11,430,861
- Issue date Aug 30, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,417,768
- Issue date Aug 16, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,411,116
- Issue date Aug 9, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,398,570
- Issue date Jul 26, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power ferroelectric based majority logic gate multiplier
- Patent number 11,381,244
- Issue date Jul 5, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
PLANAR FERROELECTRIC MEMORY DEVICE
- Publication number 20250040146
- Publication date Jan 30, 2025
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MAJORITY GATE BASED LOW POWER FERROELECTRIC BAS...
- Publication number 20240380403
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC CAPACITOR INTEGRATED WITH A LOGIC DEVICE
- Publication number 20240379733
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON NITRIDE DAMAGE-FREE DRY ETCH METHOD FOR TUNGSTEN REMOVAL IN...
- Publication number 20240371654
- Publication date Nov 7, 2024
- Applied Materials, Inc.
- Qihao ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES CONTAINING BI-METALLIC SILICIDE WITH REDUCED...
- Publication number 20240313079
- Publication date Sep 19, 2024
- Applied Materials, Inc.
- Sefa Dag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION BY INTEGRATION OF MOLYBDENUM WITH TITA...
- Publication number 20240234209
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Avgerinos V. Gelatos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF FERROELECTRIC MEMORY DEVICES HAVING STACKED ELECTROD...
- Publication number 20240099018
- Publication date Mar 21, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PILLAR CAPACITOR AND METHOD OF FABRICATING SUCH
- Publication number 20230284455
- Publication date Sep 7, 2023
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE OXIDE SILICIDES FOR RELIABLE LOW CONTACT RESISTANCE
- Publication number 20230268415
- Publication date Aug 24, 2023
- Applied Materials, Inc.
- Michael Haverty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDES, ALLOYS AND INTERMETALLICS TO MINIMIZE RESISTANCE
- Publication number 20230268414
- Publication date Aug 24, 2023
- Applied Materials, Inc.
- Michael Haverty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...
- Publication number 20230231055
- Publication date Jul 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215952
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...
- Publication number 20230215953
- Publication date Jul 6, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230163216
- Publication date May 25, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155028
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230155029
- Publication date May 18, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230142605
- Publication date May 11, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230128526
- Publication date Apr 27, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230123515
- Publication date Apr 20, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR INTEGRATED WITH LOGIC
- Publication number 20230077581
- Publication date Mar 16, 2023
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20230057354
- Publication date Feb 23, 2023
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF FERROELECTRIC MEMORY DEVICES WITH TRANSISTORS
- Publication number 20220278116
- Publication date Sep 1, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Application
Conformal High Concentration Boron Doping Of Semiconductors
- Publication number 20220246432
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW POWER FERROELECTRIC BASED MAJORITY LOGIC GATE MULTIPLIER
- Publication number 20220200600
- Publication date Jun 23, 2022
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATION OF A FERROELECTRIC MEMORY DEVICE WITH A TRANSISTOR
- Publication number 20220199633
- Publication date Jun 23, 2022
- Kepler Computing Inc.
- Gaurav Thareja
- G11 - INFORMATION STORAGE
Information Patent Application
AIRGAP FORMATION PROCESSES
- Publication number 20220115263
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...
- Publication number 20220093749
- Publication date Mar 24, 2022
- Applied Materials, Inc.
- Gaurav THAREJA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20220077319
- Publication date Mar 10, 2022
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Gaurav Thareja

Person

Patents Grantslast 30 patents

Pillar capacitor and method of fabricating such

Integration of ferroelectric memory devices having stacked electrod...

Ferroelectric capacitor integrated with logic

Majority gate based low power ferroelectric based adder with reset...

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Manganese-doped perovskite layers and semiconductor device incorpor...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Low power non-linear polar material based threshold logic gate mult...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Integration of ferroelectric memory devices with transistors

Doped polar layers and semiconductor device incorporating same

Airgap formation processes

Conformal high concentration boron doping of semiconductors

Integration of a ferroelectric memory device with a transistor

Methods and apparatus for metal silicide deposition

Ferroelectric capacitor integrated with logic

Method for using and forming low power ferroelectric based majority...

Pillar capacitor and method of fabricating such

Doped polar layers and semiconductor device incorporating same

Gate contact over active regions

Doped polar layers and semiconductor device incorporating same

Ferroelectric capacitor and method of patterning such

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

Low power ferroelectric based majority logic gate multiplier

Patents Applicationslast 30 patents

PLANAR FERROELECTRIC MEMORY DEVICE

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

METHOD OF FORMING A MAJORITY GATE BASED LOW POWER FERROELECTRIC BAS...

FERROELECTRIC CAPACITOR INTEGRATED WITH A LOGIC DEVICE

SILICON NITRIDE DAMAGE-FREE DRY ETCH METHOD FOR TUNGSTEN REMOVAL IN...

SEMICONDUCTOR DEVICES CONTAINING BI-METALLIC SILICIDE WITH REDUCED...

CONTACT RESISTANCE REDUCTION BY INTEGRATION OF MOLYBDENUM WITH TITA...

INTEGRATION OF FERROELECTRIC MEMORY DEVICES HAVING STACKED ELECTROD...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

PILLAR CAPACITOR AND METHOD OF FABRICATING SUCH

CONDUCTIVE OXIDE SILICIDES FOR RELIABLE LOW CONTACT RESISTANCE

SILICIDES, ALLOYS AND INTERMETALLICS TO MINIMIZE RESISTANCE

MANGANESE-DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPOR...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

B-SITE DOPED PEROVSKITE LAYERS AND SEMICONDUCTOR DEVICE INCORPORATI...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

FERROELECTRIC CAPACITOR INTEGRATED WITH LOGIC

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

INTEGRATION OF FERROELECTRIC MEMORY DEVICES WITH TRANSISTORS

Conformal High Concentration Boron Doping Of Semiconductors

LOW POWER FERROELECTRIC BASED MAJORITY LOGIC GATE MULTIPLIER

INTEGRATION OF A FERROELECTRIC MEMORY DEVICE WITH A TRANSISTOR

AIRGAP FORMATION PROCESSES

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT...

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME