Geert ENEMAN

Person

Leuven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor fin structure and method of fabricating the same
- Patent number 11,387,350
- Issue date Jul 12, 2022
- Imec VZW
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistor device
- Patent number 11,088,263
- Issue date Aug 10, 2021
- Imec VZW
- Anabela Veloso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor structure and a semiconductor st...
- Patent number 10,636,882
- Issue date Apr 28, 2020
- Imec VZW
- Hu Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained group IV channels
- Patent number 9,876,080
- Issue date Jan 23, 2018
- Imec VZW
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field-effect semiconductor device
- Patent number 9,698,262
- Issue date Jul 4, 2017
- Imec VZW
- Bartlomiej Pawlak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor structure comprising a fin-shaped c...
- Patent number 9,633,891
- Issue date Apr 25, 2017
- Imec VZW
- Nadine Collaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel FinFET CMOS device with common strain-relaxed buffer a...
- Patent number 9,437,681
- Issue date Sep 6, 2016
- Imec VZW
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a transistor device
- Patent number 9,406,777
- Issue date Aug 2, 2016
- Imec VZW
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with dual-strained channels and method for manufactur...
- Patent number 9,368,498
- Issue date Jun 14, 2016
- IMEC
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing transistor and associated device
- Patent number 9,257,539
- Issue date Feb 9, 2016
- Imec VZW
- Rita Rooyackers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with dual-strained channels and method for manufactur...
- Patent number 9,171,904
- Issue date Oct 27, 2015
- IMEC
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing semiconductor devices
- Patent number 9,117,777
- Issue date Aug 25, 2015
- IMEC
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices
- Patent number 9,064,702
- Issue date Jun 23, 2015
- IMEC
- David Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with strained layer for quantum well confinement and method...
- Patent number 9,006,705
- Issue date Apr 14, 2015
- IMEC
- Geert Eneman
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Implant free quantum well transistor, method for making such an imp...
- Patent number 8,698,129
- Issue date Apr 15, 2014
- IMEC
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable quantum well device and method for manufacturing the same
- Patent number 8,119,488
- Issue date Feb 21, 2012
- IMEC
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable quantum well device and method for manufacturing the same
- Patent number 7,915,608
- Issue date Mar 29, 2011
- IMEC
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Forming a Semiconductor Device
- Publication number 20240178051
- Publication date May 30, 2024
- IMEC vzw
- Anabela Veloso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR MONOCRYSTALLINE NANOSTRUCTURE
- Publication number 20210336002
- Publication date Oct 28, 2021
- IMEC vzw
- Roger Loo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR MONOCRYSTALLINE NANOSTRUCTURE
- Publication number 20210336057
- Publication date Oct 28, 2021
- IMEC vzw
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20200388698
- Publication date Dec 10, 2020
- IMEC vzw
- Anabela Veloso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20200212205
- Publication date Jul 2, 2020
- IMEC vzw
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate, Contact, and Fin Cut Method
- Publication number 20200083116
- Publication date Mar 12, 2020
- IMEC vzw
- Steven Demuynck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Structure and a Semiconductor St...
- Publication number 20190172913
- Publication date Jun 6, 2019
- IMEC vzw
- Hu Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Vertical Channel Device, and a Vertical Channe...
- Publication number 20190081156
- Publication date Mar 14, 2019
- IMEC vzw
- Anabela Veloso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Group IV Channels
- Publication number 20170033183
- Publication date Feb 2, 2017
- IMEC vzw
- Bernardette Kunert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD-EFFECT SEMICONDUCTOR DEVICE
- Publication number 20160276478
- Publication date Sep 22, 2016
- IMEC vzw
- Bartlomiej PAWLAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Transistor Structure Comprising a Fin-Shaped C...
- Publication number 20160126131
- Publication date May 5, 2016
- IMEC vzw
- Nadine Collaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTUR...
- Publication number 20160027777
- Publication date Jan 28, 2016
- IMEC vzw
- Geert ENEMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Channel FinFET CMOS Device with Common Strain-Relaxed Buffer a...
- Publication number 20160027876
- Publication date Jan 28, 2016
- Samsung Electronics Co. Ltd.
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Transistor Device
- Publication number 20150287807
- Publication date Oct 8, 2015
- Samsung Electronics Co. Ltd.
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRANSISTOR AND ASSOCIATED DEVICE
- Publication number 20150179755
- Publication date Jun 25, 2015
- IMEC vzw
- Rita Rooyackers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing Semiconductor Devices
- Publication number 20140170837
- Publication date Jun 19, 2014
- IMEC
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTUR...
- Publication number 20140151766
- Publication date Jun 5, 2014
- IMEC
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH STRAINED LAYER FOR QUANTUM WELL CONFINEMENT AND METHOD...
- Publication number 20140054547
- Publication date Feb 27, 2014
- Geert Eneman
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20140038426
- Publication date Feb 6, 2014
- GLOBALFOUNDRIES INC.
- David Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant Free Quantum Well Transistor, Method for Making Such an Imp...
- Publication number 20130161588
- Publication date Jun 27, 2013
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Isolation Trenches in Micro-Bump Interconnect St...
- Publication number 20130154112
- Publication date Jun 20, 2013
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Wenqi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE QUANTUM WELL DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110140087
- Publication date Jun 16, 2011
- IMEC
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE QUANTUM WELL DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20090283756
- Publication date Nov 19, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Geert Hellings
- H01 - BASIC ELECTRIC ELEMENTS

Geert ENEMAN

Person

Patents Grantslast 30 patents

Semiconductor fin structure and method of fabricating the same

Method of forming vertical field effect transistor device

Method for forming a semiconductor structure and a semiconductor st...

Strained group IV channels

Vertical fin field-effect semiconductor device

Method for forming a transistor structure comprising a fin-shaped c...

Dual channel FinFET CMOS device with common strain-relaxed buffer a...

Method for manufacturing a transistor device

FinFET device with dual-strained channels and method for manufactur...

Method for manufacturing transistor and associated device

FinFET device with dual-strained channels and method for manufactur...

Methods for manufacturing semiconductor devices

Method for manufacturing semiconductor devices

Device with strained layer for quantum well confinement and method...

Implant free quantum well transistor, method for making such an imp...

Scalable quantum well device and method for manufacturing the same

Scalable quantum well device and method for manufacturing the same

Patents Applicationslast 30 patents

Method for Forming a Semiconductor Device

TENSILE STRAINED SEMICONDUCTOR MONOCRYSTALLINE NANOSTRUCTURE

STRAINED SEMICONDUCTOR MONOCRYSTALLINE NANOSTRUCTURE

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME

Gate, Contact, and Fin Cut Method

Method for Forming a Semiconductor Structure and a Semiconductor St...

Method for Forming a Vertical Channel Device, and a Vertical Channe...

Strained Group IV Channels

VERTICAL FIN FIELD-EFFECT SEMICONDUCTOR DEVICE

Method for Forming a Transistor Structure Comprising a Fin-Shaped C...

FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTUR...

Dual Channel FinFET CMOS Device with Common Strain-Relaxed Buffer a...

Method for Manufacturing a Transistor Device

METHOD FOR MANUFACTURING TRANSISTOR AND ASSOCIATED DEVICE

Methods for Manufacturing Semiconductor Devices

FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTUR...

DEVICE WITH STRAINED LAYER FOR QUANTUM WELL CONFINEMENT AND METHOD...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

Implant Free Quantum Well Transistor, Method for Making Such an Imp...

Method for Forming Isolation Trenches in Micro-Bump Interconnect St...

SCALABLE QUANTUM WELL DEVICE AND METHOD FOR MANUFACTURING THE SAME

SCALABLE QUANTUM WELL DEVICE AND METHOD FOR MANUFACTURING THE SAME