Gen P. Lauer

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Enhanced coercivity in MTJ devices by contact depth control
- Patent number 11,011,698
- Issue date May 18, 2021
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced coercivity in MTJ devices by contact depth control
- Patent number 10,497,862
- Issue date Dec 3, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque MRAM fabrication using negative tone lithography and io...
- Patent number 10,388,857
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 10,256,397
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 10,243,138
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internal spacer formation from selective oxidation for fin-first wi...
- Patent number 10,170,608
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Szu-Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internal spacer formation from selective oxidation for Fin-first wi...
- Patent number 10,170,609
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Szu-Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque MRAM fabrication using negative tone lithography and io...
- Patent number 10,170,698
- Issue date Jan 1, 2019
- Anthony J. Annunziata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Enhanced coercivity in MTJ devices by contact depth control
- Patent number 10,084,127
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 9,960,347
- Issue date May 1, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,954,063
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,954,062
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting in STT-MRAM device
- Patent number 9,947,863
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,859,375
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced process degradation of spin torque magnetoresistive random...
- Patent number 9,853,210
- Issue date Dec 26, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...
- Patent number 9,812,370
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting in STT-MRAM device
- Patent number 9,748,310
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method to reduce shorting and process degradation in...
- Patent number 9,705,071
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque MRAM fabrication using negative tone lithography and io...
- Patent number 9,705,077
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature encapsulation for magnetic tunnel junction
- Patent number 9,691,972
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting in STT-MRAM device
- Patent number 9,673,386
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced coercivity in MTJ devices by contact depth control
- Patent number 9,660,179
- Issue date May 23, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive structures with stressed layer
- Patent number 9,653,679
- Issue date May 16, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive structures with stressed layer
- Patent number 9,601,686
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide silicon having silicon and silicon german...
- Patent number 9,543,388
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Gen P. Lauer
- G05 - CONTROLLING REGULATING
Information Patent Grant
Low degradation MRAM encapsulation process using silicon-rich silic...
- Patent number 9,515,252
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method to reduce shorting in STT-MRAM device
- Patent number 9,502,640
- Issue date Nov 22, 2016
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...
- Patent number 9,496,184
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide silicon having silicon and silicon german...
- Patent number 9,466,673
- Issue date Oct 11, 2016
- International Business Machines Corporation
- Gen P. Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce shorting in STT-MRAM device
- Patent number 9,450,180
- Issue date Sep 20, 2016
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL
- Publication number 20180309053
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20180190900
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20180190901
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...
- Publication number 20170244024
- Publication date Aug 24, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20170229641
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE
- Publication number 20170222134
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL
- Publication number 20170222136
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL
- Publication number 20170222130
- Publication date Aug 3, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCEMENT OF SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS...
- Publication number 20170186944
- Publication date Jun 29, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE ENCAPSULATION FOR MAGNETIC TUNNEL JUNCTION
- Publication number 20170179194
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...
- Publication number 20170148976
- Publication date May 25, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED PROCESS DEGRADATION OF SPIN TORQUE MAGNETORESISTIVE RANDOM...
- Publication number 20170141299
- Publication date May 18, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE
- Publication number 20170125667
- Publication date May 4, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE
- Publication number 20170125480
- Publication date May 4, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...
- Publication number 20170062707
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...
- Publication number 20170062708
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...
- Publication number 20170040219
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WI...
- Publication number 20170005180
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Szu-Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WI...
- Publication number 20170005188
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Szu-Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
- Publication number 20160233314
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
- Publication number 20160233304
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
- Publication number 20160233320
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE SILICON HAVING SILICON AND SILICON GERMAN...
- Publication number 20160211328
- Publication date Jul 21, 2016
- International Business Machines Corporation
- Gen P. Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE SILICON HAVING SILICON AND SILICON GERMAN...
- Publication number 20160211327
- Publication date Jul 21, 2016
- International Business Machines Corporation
- Gen P. Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR
- Publication number 20160099338
- Publication date Apr 7, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V, GE, OR SIGE FIN BASE LATERAL BIPOLAR TRANSISTOR STRUCTURE AN...
- Publication number 20150287650
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...
- Publication number 20150287642
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Temperature Salicide for Replacement Gate Nanowires
- Publication number 20150021715
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Rate Chemical Vapor Etch of Silicon Substrates
- Publication number 20140357082
- Publication date Dec 4, 2014
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROU...
- Publication number 20140322907
- Publication date Oct 30, 2014
- Matthew J. BrightSky
- H01 - BASIC ELECTRIC ELEMENTS

Gen P. Lauer

Person

Patents Grantslast 30 patents

Enhanced coercivity in MTJ devices by contact depth control

Enhanced coercivity in MTJ devices by contact depth control

Spin torque MRAM fabrication using negative tone lithography and io...

Structure and method to reduce shorting and process degradation in...

Structure and method to reduce shorting and process degradation in...

Internal spacer formation from selective oxidation for fin-first wi...

Internal spacer formation from selective oxidation for Fin-first wi...

Spin torque MRAM fabrication using negative tone lithography and io...

Enhanced coercivity in MTJ devices by contact depth control

Structure and method to reduce shorting and process degradation in...

Stacked planar double-gate lamellar field-effect transistor

Stacked planar double-gate lamellar field-effect transistor

Structure and method to reduce shorting in STT-MRAM device

Stacked planar double-gate lamellar field-effect transistor

Reduced process degradation of spin torque magnetoresistive random...

III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...

Structure and method to reduce shorting in STT-MRAM device

Structure and method to reduce shorting and process degradation in...

Spin torque MRAM fabrication using negative tone lithography and io...

Low temperature encapsulation for magnetic tunnel junction

Structure and method to reduce shorting in STT-MRAM device

Enhanced coercivity in MTJ devices by contact depth control

Magnetoresistive structures with stressed layer

Magnetoresistive structures with stressed layer

Complementary metal-oxide silicon having silicon and silicon german...

Low degradation MRAM encapsulation process using silicon-rich silic...

Structure and method to reduce shorting in STT-MRAM device

III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...

Complementary metal-oxide silicon having silicon and silicon german...

Structure and method to reduce shorting in STT-MRAM device

Patents Applicationslast 30 patents

ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE

ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL

ENHANCED COERCIVITY IN MTJ DEVICES BY CONTACT DEPTH CONTROL

ENHANCEMENT OF SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS...

LOW TEMPERATURE ENCAPSULATION FOR MAGNETIC TUNNEL JUNCTION

STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN...

REDUCED PROCESS DEGRADATION OF SPIN TORQUE MAGNETORESISTIVE RANDOM...

STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE

STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE

SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...

SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND IO...

III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...

INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WI...

INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WI...

STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR

STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR

STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR

COMPLEMENTARY METAL-OXIDE SILICON HAVING SILICON AND SILICON GERMAN...

COMPLEMENTARY METAL-OXIDE SILICON HAVING SILICON AND SILICON GERMAN...

STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR

III-V, GE, OR SIGE FIN BASE LATERAL BIPOLAR TRANSISTOR STRUCTURE AN...

III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...

Low Temperature Salicide for Replacement Gate Nanowires

High-Rate Chemical Vapor Etch of Silicon Substrates

SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROU...