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Nagano, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
Patent number
7,687,385
Issue date
Mar 30, 2010
Fuji Electric Holdings Co., Ltd.
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
Patent number
7,195,980
Issue date
Mar 27, 2007
Fuji Electric Co., Ltd.
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
Patent number
6,853,034
Issue date
Feb 8, 2005
Fuji Electric Co., Ltd.
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral high breakdown voltage MOSFET and device provided therewith
Patent number
6,844,598
Issue date
Jan 18, 2005
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral high breakdown voltage MOSFET and device provided therewith
Patent number
6,818,954
Issue date
Nov 16, 2004
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High withstand voltage semiconductor device
Patent number
6,740,952
Issue date
May 25, 2004
Fuji Electric Co., Ltd.
Naoto Fujishima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor apparatus and method for manufacturing the same
Patent number
6,558,983
Issue date
May 6, 2003
Fuji Electric Co., Ltd.
Masaru Saitou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MIS semiconductor device with low on resistance and high breakdown...
Patent number
6,525,390
Issue date
Feb 25, 2003
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral high voltage semiconductor device with protective silicon n...
Patent number
6,316,794
Issue date
Nov 13, 2001
Fuji Electric Co., Ltd.
Masaru Saitou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High voltage integrated circuit
Patent number
5,973,366
Issue date
Oct 26, 1999
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with limiter diode
Patent number
5,612,564
Issue date
Mar 18, 1997
Fuji Electric Co., Ltd.
Naoto Fujishima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing a semiconductor device having two MIS transisto...
Patent number
5,545,577
Issue date
Aug 13, 1996
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
CMOS structure with varying gate oxide thickness and with both diff...
Patent number
5,497,021
Issue date
Mar 5, 1996
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Insulated-gate semiconductor field effect transistor which operates...
Patent number
5,495,122
Issue date
Feb 27, 1996
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High voltage MIS transistor and semiconductor device
Patent number
5,436,486
Issue date
Jul 25, 1995
Fuji Electric Co., Ltd.
Naoto Fujishima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High withstand voltage M I S field effect transistor and semiconduc...
Patent number
5,432,370
Issue date
Jul 11, 1995
Fuji Electric Co., Ltd.
Akio Kitamura
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
SEMICONDUCTOR DEVICE EXHIBITING A HIGH BREAKDOWN VOLTAGE AND THE ME...
Publication number
20070155144
Publication date
Jul 5, 2007
FUJI ELECTRIC HOLDING CO., LTD.
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device exhibiting a high breakdown voltage and the me...
Publication number
20050127439
Publication date
Jun 16, 2005
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Lateral high breakdown voltage MOSFET and device provided therewith
Publication number
20040159856
Publication date
Aug 19, 2004
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Lateral high breakdown voltage MOSFET and device provided therewith
Publication number
20030122195
Publication date
Jul 3, 2003
Fuji Electric Co., Ltd.
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
High withstand voltage semiconductor device
Publication number
20020145172
Publication date
Oct 10, 2002
Naoto Fujishima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor apparatus and method for manufacturing the same
Publication number
20020003288
Publication date
Jan 10, 2002
Fuji Electric, Co., Ltd.
Masaru Saitou
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device
Publication number
20010048122
Publication date
Dec 6, 2001
Gen Tada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device exhibiting a high breakdown voltage and the me...
Publication number
20010038122
Publication date
Nov 8, 2001
Kazuo Matsuzaki
H01 - BASIC ELECTRIC ELEMENTS