Gen Tsutsui

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-step nanosheet structure for stacked field-effect transistors
- Patent number 12,119,264
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain for fin field effect transistors
- Patent number 11,830,946
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field effect transistor with bottom source/drain
- Patent number 11,616,140
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment from oxygen vacancy by scavenge metal...
- Patent number 11,282,962
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain for fin field effect transistors
- Patent number 11,276,781
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differing device characteristics on a single wafer by selective etch
- Patent number 11,183,427
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field effect transistor with bottom source/drain
- Patent number 11,056,588
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of stacked vertical transport field effect transistors
- Patent number 11,037,905
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface charge reduction for SiGe surface
- Patent number 10,971,626
- Issue date Apr 6, 2021
- International Business Machines Corporation
- Devendra Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid BEOL metallization utilizing selective reflection mask
- Patent number 10,957,646
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack designs for analog and logic devices in dual channel Si/...
- Patent number 10,937,648
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with mitigated local layout effects
- Patent number 10,892,181
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin isolation to mitigate local layout effects
- Patent number 10,685,866
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differing device characteristics on a single wafer by selective etch
- Patent number 10,679,901
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment from oxygen vacancy by scavenge metal...
- Patent number 10,672,910
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fin oxidation by flowable oxide fill and steam anneal to...
- Patent number 10,658,224
- Issue date May 19, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid BEOL metallization utilizing selective reflection mask
- Patent number 10,586,767
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack designs for analog and logic devices in dual channel Si/...
- Patent number 10,535,517
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with sigma recessed source/drain and un-doped buffer layer e...
- Patent number 10,535,773
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface charge reduction for SiGe surface
- Patent number 10,381,479
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Devendra Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including fin having condensed channel region
- Patent number 10,319,811
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser spike annealing for solid phase epitaxy and low contact resis...
- Patent number 10,312,245
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with sigma recessed source/drain and un-doped buffer layer e...
- Patent number 10,249,758
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned doping in source/drain regions for low contact resistance
- Patent number 10,249,542
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling low resistance gates and contacts integrated with bilayer...
- Patent number 10,204,828
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming MOSFET structures with work function modification
- Patent number 10,170,477
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming MOSFET structures with work function modification
- Patent number 10,147,725
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser spike annealing for solid phase epitaxy and low contact resis...
- Patent number 10,115,728
- Issue date Oct 30, 2018
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with sigma recessed source/drain and un-doped buffer layer e...
- Patent number 10,096,713
- Issue date Oct 9, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned doping in source/drain regions for low contact resistance
- Patent number 10,032,679
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW EXTERNAL RESISTANCE LAST NANOSHEET
- Publication number 20250089327
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH D...
- Publication number 20240203991
- Publication date Jun 20, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-FET SRAM CELL WITH BOTTOM pFET
- Publication number 20240121933
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Gen Tsutsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
- Publication number 20240113192
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
- Publication number 20240088252
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER
- Publication number 20240088277
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SUBSTRATE CONTACT
- Publication number 20240071811
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20240006244
- Publication date Jan 4, 2024
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
- Publication number 20230420457
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTORS WITH REDUCED GATE-TO-DRAIN PARASIT...
- Publication number 20230317793
- Publication date Oct 5, 2023
- International Business Machines Corporation
- SHOGO MOCHIZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT WITH SELF-ALIGNED SPACER FOR STACKED SEMICONDUCTOR D...
- Publication number 20230307447
- Publication date Sep 28, 2023
- International Business Machines Corporation
- GEN TSUTSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIPOLAR-FET IMPLEMENTATION IN STACKED-FET CMOS
- Publication number 20230178624
- Publication date Jun 8, 2023
- International Business Machines Corporation
- GEN TSUTSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE/DRAIN FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20220173240
- Publication date Jun 2, 2022
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE/DRAIN FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20210328051
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE/DRAIN
- Publication number 20210226055
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE/DRAIN
- Publication number 20210104627
- Publication date Apr 8, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS
- Publication number 20200343222
- Publication date Oct 29, 2020
- International Business Machines Corporation
- Heng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL...
- Publication number 20200287048
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERING DEVICE CHARACTERISTICS ON A SINGLE WAFER BY SELECTIVE ETCH
- Publication number 20200227322
- Publication date Jul 16, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO...
- Publication number 20200203214
- Publication date Jun 25, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BEOL METALLIZATION UTILIZING SELECTIVE REFLECTION MASK
- Publication number 20200176388
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Benjamin D. BRIGGS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/...
- Publication number 20200144057
- Publication date May 7, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION TO MITIGATE LOCAL LAYOUT EFFECTS
- Publication number 20200083088
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE L...
- Publication number 20200083089
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERING DEVICE CHARACTERISTICS ON A SINGLE WAFER BY SELECTIVE ETCH
- Publication number 20200058555
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL...
- Publication number 20200052125
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BEOL METALLIZATION UTILIZING SELECTIVE REFLECTION MASK
- Publication number 20200027840
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Benjamin D. BRIGGS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interface Charge Reduction for SiGe Surface
- Publication number 20190326429
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Devendra Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/...
- Publication number 20190295844
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Gen Tsutsui

Person

Patents Grantslast 30 patents

Non-step nanosheet structure for stacked field-effect transistors

Bottom source/drain for fin field effect transistors

Vertical transport field effect transistor with bottom source/drain

Threshold voltage adjustment from oxygen vacancy by scavenge metal...

Bottom source/drain for fin field effect transistors

Differing device characteristics on a single wafer by selective etch

Vertical transport field effect transistor with bottom source/drain

Formation of stacked vertical transport field effect transistors

Interface charge reduction for SiGe surface

Hybrid BEOL metallization utilizing selective reflection mask

Gate stack designs for analog and logic devices in dual channel Si/...

Semiconductor device with mitigated local layout effects

Fin isolation to mitigate local layout effects

Differing device characteristics on a single wafer by selective etch

Threshold voltage adjustment from oxygen vacancy by scavenge metal...

Method of fin oxidation by flowable oxide fill and steam anneal to...

Hybrid BEOL metallization utilizing selective reflection mask

Gate stack designs for analog and logic devices in dual channel Si/...

FinFET with sigma recessed source/drain and un-doped buffer layer e...

Interface charge reduction for SiGe surface

Semiconductor device including fin having condensed channel region

Laser spike annealing for solid phase epitaxy and low contact resis...

FinFET with sigma recessed source/drain and un-doped buffer layer e...

Self-aligned doping in source/drain regions for low contact resistance

Enabling low resistance gates and contacts integrated with bilayer...

Forming MOSFET structures with work function modification

Forming MOSFET structures with work function modification

Laser spike annealing for solid phase epitaxy and low contact resis...

FinFET with sigma recessed source/drain and un-doped buffer layer e...

Self-aligned doping in source/drain regions for low contact resistance

Patents Applicationslast 30 patents

LOW EXTERNAL RESISTANCE LAST NANOSHEET

STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH D...

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

STACKED-FET SRAM CELL WITH BOTTOM pFET

FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL

GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS

FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER

STACKED FET SUBSTRATE CONTACT

NON-STEP NANOSHEET STRUCTURE FOR STACKED FIELD-EFFECT TRANSISTORS

SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...

STACKED FIELD EFFECT TRANSISTORS WITH REDUCED GATE-TO-DRAIN PARASIT...

BOTTOM CONTACT WITH SELF-ALIGNED SPACER FOR STACKED SEMICONDUCTOR D...

UNIPOLAR-FET IMPLEMENTATION IN STACKED-FET CMOS

BOTTOM SOURCE/DRAIN FOR FIN FIELD EFFECT TRANSISTORS

BOTTOM SOURCE/DRAIN FOR FIN FIELD EFFECT TRANSISTORS

VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE/DRAIN

VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE/DRAIN

FORMATION OF STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS

THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL...

DIFFERING DEVICE CHARACTERISTICS ON A SINGLE WAFER BY SELECTIVE ETCH

METHOD OF FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO...

HYBRID BEOL METALLIZATION UTILIZING SELECTIVE REFLECTION MASK

Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/...

FIN ISOLATION TO MITIGATE LOCAL LAYOUT EFFECTS

FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE L...

DIFFERING DEVICE CHARACTERISTICS ON A SINGLE WAFER BY SELECTIVE ETCH

THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL...

HYBRID BEOL METALLIZATION UTILIZING SELECTIVE REFLECTION MASK

Interface Charge Reduction for SiGe Surface

Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/...