Gengming Tao

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-V compound semiconductor dies with stress-treated inactive surf...
- Patent number 11,545,404
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with field plates
- Patent number 11,515,406
- Issue date Nov 29, 2022
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed feedback (DFB) laser on silicon and integrated device c...
- Patent number 11,437,781
- Issue date Sep 6, 2022
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked multilayer high-density RRAM
- Patent number 11,201,193
- Issue date Dec 14, 2021
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power performance gallium nitride high electron mobility trans...
- Patent number 10,971,615
- Issue date Apr 6, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,896,981
- Issue date Jan 19, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,886,266
- Issue date Jan 5, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source/drain regions in III-V transistors
- Patent number 10,868,161
- Issue date Dec 15, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power compound semiconductor field effect transistor devices w...
- Patent number 10,756,206
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with field plates
- Patent number 10,749,017
- Issue date Aug 18, 2020
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically-integrated two-dimensional (2D) semiconductor slabs in c...
- Patent number 10,734,384
- Issue date Aug 4, 2020
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo detectors
- Patent number 10,672,807
- Issue date Jun 2, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor (HBT)
- Patent number 10,622,465
- Issue date Apr 14, 2020
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitor
- Patent number 10,615,294
- Issue date Apr 7, 2020
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact and reliable physical unclonable function devices and methods
- Patent number 10,615,988
- Issue date Apr 7, 2020
- QUALCOMM Incorporated
- Xia Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Rotated metal-oxide-metal (RTMOM) capacitor
- Patent number 10,615,113
- Issue date Apr 7, 2020
- QUALCOMM Incorporated
- Xia Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Variable thickness gate oxide transcap
- Patent number 10,580,908
- Issue date Mar 3, 2020
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering layer formation and substrate
- Patent number 10,522,367
- Issue date Dec 31, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low collector contact resistance heterojunction bipolar transistors
- Patent number 10,490,639
- Issue date Nov 26, 2019
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix...
- Patent number 10,482,929
- Issue date Nov 19, 2019
- QUALCOMM Incorporated
- Xia Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Double gate, flexible thin-film transistor (TFT) complementary meta...
- Patent number 10,483,287
- Issue date Nov 19, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride power amplifier integration with metal-oxide-semico...
- Patent number 10,475,889
- Issue date Nov 12, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor with self-aligned gate
- Patent number 10,461,164
- Issue date Oct 29, 2019
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide semiconductor (CMOS) integration with com...
- Patent number 10,431,581
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors and method of fabricating the same
- Patent number 10,396,188
- Issue date Aug 27, 2019
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor power amplifier with backside the...
- Patent number 10,319,830
- Issue date Jun 11, 2019
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-stable static random access memory (SRAM) bit cells that facilit...
- Patent number 10,312,244
- Issue date Jun 4, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator (SOI) transcap integration providing front and...
- Patent number 10,283,650
- Issue date May 7, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-switched magneto-resistive random access memory (MRAM) empl...
- Patent number 10,224,368
- Issue date Mar 5, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Planar double gate semiconductor device
- Patent number 10,205,018
- Issue date Feb 12, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-V COMPOUND SEMICONDUCTOR DIES WITH STRESS-TREATED INACTIVE SURF...
- Publication number 20210351095
- Publication date Nov 11, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED FEEDBACK (DFB) LASER ON SILICON AND INTEGRATED DEVICE C...
- Publication number 20210273409
- Publication date Sep 2, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED MULTILAYER HIGH-DENSITY RRAM
- Publication number 20210233959
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20210098533
- Publication date Apr 1, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND RESISTIVE RANDOM ACCESS MEMORY (RRAM)
- Publication number 20210036222
- Publication date Feb 4, 2021
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF VERTICAL GAN VARACTOR WITH HEMT
- Publication number 20210020790
- Publication date Jan 21, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISCONTINUOUS CHARGE TRAP LAYER MEMORY DEVICE
- Publication number 20200388628
- Publication date Dec 10, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH FIELD PLATES
- Publication number 20200328293
- Publication date Oct 15, 2020
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH FIELD PLATES
- Publication number 20200259004
- Publication date Aug 13, 2020
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) FIN FIELD-EFFECT TRANSISTO...
- Publication number 20200251582
- Publication date Aug 6, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-INTEGRATED TWO-DIMENSIONAL (2D) SEMICONDUCTOR SLABS IN C...
- Publication number 20200235098
- Publication date Jul 23, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTO DETECTORS
- Publication number 20200203399
- Publication date Jun 25, 2020
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE-ALL-AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) FOR...
- Publication number 20200185384
- Publication date Jun 11, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH LOW CONTACT RESISTANCE AND METHOD OF FABRICATING T...
- Publication number 20200152739
- Publication date May 14, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) CARBON NANOTUBE GATE METAL OXIDE (MOS) FIELD...
- Publication number 20200091448
- Publication date Mar 19, 2020
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SOURCE/DRAIN REGIONS IN III-V TRANSISTORS
- Publication number 20200075753
- Publication date Mar 5, 2020
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20200052078
- Publication date Feb 13, 2020
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER PERFORMANCE GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANS...
- Publication number 20200052103
- Publication date Feb 13, 2020
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROTATED METAL-OXIDE-METAL (RTMOM) CAPACITOR
- Publication number 20190385947
- Publication date Dec 19, 2019
- QUALCOMM Incorporated
- Xia LI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VARIABLE CAPACITOR
- Publication number 20190386154
- Publication date Dec 19, 2019
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER AMPLIFIER INTEGRATION WITH METAL-OXIDE-SEMICO...
- Publication number 20190371895
- Publication date Dec 5, 2019
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE-BASED TRANSCAPS FOR MILLIMETER WAVE APPLICATIONS
- Publication number 20190363198
- Publication date Nov 28, 2019
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE THICKNESS GATE OXIDE TRANSCAP
- Publication number 20190312153
- Publication date Oct 10, 2019
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20190305094
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE ACOUSTIC WAVE DEVICES AND METHOD OF FABRICATING THE SAME
- Publication number 20190288662
- Publication date Sep 19, 2019
- QUALCOMM Incorporated
- Bin YANG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THE...
- Publication number 20190245058
- Publication date Aug 8, 2019
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT AND RELIABLE PHYSICAL UNCLONABLE FUNCTION DEVICES AND METHODS
- Publication number 20190229933
- Publication date Jul 25, 2019
- QUALCOMM Incorporated
- Xia Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20190189787
- Publication date Jun 20, 2019
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-STABLE STATIC RANDOM ACCESS MEMORY (SRAM) BIT CELLS THAT FACILIT...
- Publication number 20190088660
- Publication date Mar 21, 2019
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
- Publication number 20190088765
- Publication date Mar 21, 2019
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS

Gengming Tao

Person

Patents Grantslast 30 patents

III-V compound semiconductor dies with stress-treated inactive surf...

Heterojunction bipolar transistor with field plates

Distributed feedback (DFB) laser on silicon and integrated device c...

Vertically stacked multilayer high-density RRAM

High power performance gallium nitride high electron mobility trans...

Integration of vertical GaN varactor with HEMT

Integration of vertical GaN varactor with HEMT

Low resistance source/drain regions in III-V transistors

High power compound semiconductor field effect transistor devices w...

Heterojunction bipolar transistors with field plates

Vertically-integrated two-dimensional (2D) semiconductor slabs in c...

Photo detectors

Heterojunction bipolar transistor (HBT)

Variable capacitor

Compact and reliable physical unclonable function devices and methods

Rotated metal-oxide-metal (RTMOM) capacitor

Variable thickness gate oxide transcap

Gettering layer formation and substrate

Low collector contact resistance heterojunction bipolar transistors

Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix...

Double gate, flexible thin-film transistor (TFT) complementary meta...

Gallium nitride power amplifier integration with metal-oxide-semico...

Compound semiconductor field effect transistor with self-aligned gate

Complementary metal-oxide semiconductor (CMOS) integration with com...

Heterojunction bipolar transistors and method of fabricating the same

Heterojunction bipolar transistor power amplifier with backside the...

Bi-stable static random access memory (SRAM) bit cells that facilit...

Silicon on insulator (SOI) transcap integration providing front and...

Voltage-switched magneto-resistive random access memory (MRAM) empl...

Planar double gate semiconductor device

Patents Applicationslast 30 patents

III-V COMPOUND SEMICONDUCTOR DIES WITH STRESS-TREATED INACTIVE SURF...

DISTRIBUTED FEEDBACK (DFB) LASER ON SILICON AND INTEGRATED DEVICE C...

VERTICALLY STACKED MULTILAYER HIGH-DENSITY RRAM

VERTICAL RESISTIVE RANDOM ACCESS MEMORY

GATE-ALL-AROUND RESISTIVE RANDOM ACCESS MEMORY (RRAM)

INTEGRATION OF VERTICAL GAN VARACTOR WITH HEMT

DISCONTINUOUS CHARGE TRAP LAYER MEMORY DEVICE

HETEROJUNCTION BIPOLAR TRANSISTOR WITH FIELD PLATES

HETEROJUNCTION BIPOLAR TRANSISTORS WITH FIELD PLATES

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) FIN FIELD-EFFECT TRANSISTO...

VERTICALLY-INTEGRATED TWO-DIMENSIONAL (2D) SEMICONDUCTOR SLABS IN C...

PHOTO DETECTORS

HORIZONTAL GATE-ALL-AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) FOR...

TRANSISTORS WITH LOW CONTACT RESISTANCE AND METHOD OF FABRICATING T...

THREE-DIMENSIONAL (3D) CARBON NANOTUBE GATE METAL OXIDE (MOS) FIELD...

LOW RESISTANCE SOURCE/DRAIN REGIONS IN III-V TRANSISTORS

LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS

HIGH POWER PERFORMANCE GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANS...

ROTATED METAL-OXIDE-METAL (RTMOM) CAPACITOR

VARIABLE CAPACITOR

GALLIUM NITRIDE POWER AMPLIFIER INTEGRATION WITH METAL-OXIDE-SEMICO...

GALLIUM-NITRIDE-BASED TRANSCAPS FOR MILLIMETER WAVE APPLICATIONS

VARIABLE THICKNESS GATE OXIDE TRANSCAP

LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS

SURFACE ACOUSTIC WAVE DEVICES AND METHOD OF FABRICATING THE SAME

HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THE...

COMPACT AND RELIABLE PHYSICAL UNCLONABLE FUNCTION DEVICES AND METHODS

HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

BI-STABLE STATIC RANDOM ACCESS MEMORY (SRAM) BIT CELLS THAT FACILIT...

COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE