Genta Mizuno

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device including dielectric rails for warp...
- Patent number 11,923,321
- Issue date Mar 5, 2024
- SanDisk Technologies LLC
- Shin Sakiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing amorphous and crystallin...
- Patent number 11,894,298
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing bridges for enhanced str...
- Patent number 11,532,570
- Issue date Dec 20, 2022
- SanDisk Technologies LLC
- Genta Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing word lines formed by sel...
- Patent number 11,437,270
- Issue date Sep 6, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing amorphous and crystallin...
- Patent number 11,289,416
- Issue date Mar 29, 2022
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having a slimmed aluminum oxide blo...
- Patent number 10,861,869
- Issue date Dec 8, 2020
- SanDisk Technologies LLC
- Ryo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing replacement contact via...
- Patent number 10,608,010
- Issue date Mar 31, 2020
- SanDisk Technologies LLC
- Yujin Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing word lines formed by sel...
- Patent number 10,529,620
- Issue date Jan 7, 2020
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective tungsten growth for word lines of a three-dimensional mem...
- Patent number 10,381,372
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Fumitaka Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt-containing conductive layers for control gate electrodes in...
- Patent number 10,128,261
- Issue date Nov 13, 2018
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-charge region memory cells for a vertical NAND device
- Patent number 9,666,594
- Issue date May 30, 2017
- SanDisk Technologies LLC
- Genta Mizuno
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiheight contact via structures for a multilevel interconnect st...
- Patent number 9,401,309
- Issue date Jul 26, 2016
- SanDisk Technologies LLC
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate ultrahigh density vertical NAND flash memory
- Patent number 9,159,739
- Issue date Oct 13, 2015
- SanDisk Technologies Inc.
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIELECTRIC RAILS FOR WARP...
- Publication number 20230223356
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Shin SAKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BRIDGES FOR ENHANCED STR...
- Publication number 20220254733
- Publication date Aug 11, 2022
- SANDISK TECHNOLOGIES LLC
- Genta MIZUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...
- Publication number 20220216145
- Publication date Jul 7, 2022
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...
- Publication number 20210159167
- Publication date May 27, 2021
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SEL...
- Publication number 20200105595
- Publication date Apr 2, 2020
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING A SLIMMED ALUMINUM OXIDE BLO...
- Publication number 20200020715
- Publication date Jan 16, 2020
- SANDISK TECHNOLOGIES LLC
- Ryo NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA...
- Publication number 20190280001
- Publication date Sep 12, 2019
- SANDISK TECHNOLOGIES LLC
- Yujin TERASAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SEL...
- Publication number 20180090373
- Publication date Mar 29, 2018
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN GROWTH FOR WORD LINES OF A THREE-DIMENSIONAL MEM...
- Publication number 20180019256
- Publication date Jan 18, 2018
- SanDisk Technologies LLC
- Fumitaka AMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20170287925
- Publication date Oct 5, 2017
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHARGE REGION MEMORY CELLS FOR A VERTICAL NAND DEVICE
- Publication number 20160071876
- Publication date Mar 10, 2016
- SanDisk Technologies, Inc.
- Genta MIZUNO
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...
- Publication number 20160064281
- Publication date Mar 3, 2016
- SANDISK TECHNOLOGIES INC.
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...
- Publication number 20150179662
- Publication date Jun 25, 2015
- SANDISK TECHNOLOGIES INC.
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE ULTRAHIGH DENSITY VERTICAL NAND FLASH MEMORY AND METH...
- Publication number 20140353738
- Publication date Dec 4, 2014
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS

Genta Mizuno

Person

Patents Grantslast 30 patents

Three-dimensional memory device including dielectric rails for warp...

Three-dimensional memory device containing amorphous and crystallin...

Three-dimensional memory device containing bridges for enhanced str...

Three-dimensional memory device containing word lines formed by sel...

Three-dimensional memory device containing amorphous and crystallin...

Three-dimensional memory device having a slimmed aluminum oxide blo...

Three-dimensional memory device containing replacement contact via...

Three-dimensional memory device containing word lines formed by sel...

Selective tungsten growth for word lines of a three-dimensional mem...

Cobalt-containing conductive layers for control gate electrodes in...

Multi-charge region memory cells for a vertical NAND device

Multiheight contact via structures for a multilevel interconnect st...

Floating gate ultrahigh density vertical NAND flash memory

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIELECTRIC RAILS FOR WARP...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BRIDGES FOR ENHANCED STR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SEL...

THREE-DIMENSIONAL MEMORY DEVICE HAVING A SLIMMED ALUMINUM OXIDE BLO...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SEL...

SELECTIVE TUNGSTEN GROWTH FOR WORD LINES OF A THREE-DIMENSIONAL MEM...

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...

MULTI-CHARGE REGION MEMORY CELLS FOR A VERTICAL NAND DEVICE

MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...

COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN...

FLOATING GATE ULTRAHIGH DENSITY VERTICAL NAND FLASH MEMORY AND METH...