Geoffrey Duggan

Person

Deddington, GB

People

Patents Grantslast 30 patents

Information Patent Grant
III-Nitride optoelectronic semiconductor device containing lattice...
- Patent number 6,695,913
- Issue date Feb 24, 2004
- Sharp Kabushiki Kaisha
- Geoffrey Duggan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molecular beam epitaxy method
- Patent number 6,146,458
- Issue date Nov 14, 2000
- Sharp Kabushiki Kaisha
- Stewart Edward Hooper
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser devices including separate confinement heterostructure
- Patent number 6,084,898
- Issue date Jul 4, 2000
- Sharp Kabushiki Kaisha
- Jonathan Heffernan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-nitride optoelectronic semiconductor device containing Lattice...
- Patent number 6,072,189
- Issue date Jun 6, 2000
- Sharp Kabushiki Kaisha
- Geoffrey Duggan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a compound semiconductor film
- Patent number 6,001,173
- Issue date Dec 14, 1999
- Sharp Kabushiki Kaisha
- Timothy David Bestwick
- C30 - CRYSTAL GROWTH
Information Patent Grant
Separate confinement heterostructure laser device
- Patent number 5,991,321
- Issue date Nov 23, 1999
- Sharp Kabushiki Kaisha
- Geoffrey Duggan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and a method of growing a semiconductor...
- Patent number 5,828,685
- Issue date Oct 27, 1998
- Sharp Kabushiki Kaisha
- Geoffrey Duggan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface-emitting laser
- Patent number 5,812,577
- Issue date Sep 22, 1998
- Sharp Kabushiki Kaisha
- Martin David Dawson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic semiconductor device having a miniband
- Patent number 5,747,827
- Issue date May 5, 1998
- Sharp Kabushiki Kaisha
- Geoffrey Duggan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum device and method of making such a device
- Patent number 5,571,376
- Issue date Nov 5, 1996
- Sharp Kabushiki Kaisha
- Timothy D. Bestwick
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum well structure having differentially strained quantum well...
- Patent number 5,473,173
- Issue date Dec 5, 1995
- Sharp Kabushiki Kaisha
- Haruhisa Takiguchi
- B82 - NANO-TECHNOLOGY

Geoffrey Duggan

Person

Patents Grantslast 30 patents

III-Nitride optoelectronic semiconductor device containing lattice...

Molecular beam epitaxy method

Laser devices including separate confinement heterostructure

III-nitride optoelectronic semiconductor device containing Lattice...

Method of forming a compound semiconductor film

Separate confinement heterostructure laser device

Semiconductor laser device and a method of growing a semiconductor...

Surface-emitting laser

Optoelectronic semiconductor device having a miniband

Quantum device and method of making such a device

Quantum well structure having differentially strained quantum well...