George L. Schnable

Person

Lansdale Borough, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of edge doping SOI islands
- Patent number 5,053,345
- Issue date Oct 1, 1991
- Harris Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of thin-film resistors on silicon substrates
- Patent number H546
- Issue date Nov 1, 1988
- The United States of America as represented by the Secretary of the Air Force
- George L. Schnable
- 419 - Powder metallurgy processes
Information Patent Grant
Semiconductor device and method of making the same
- Patent number 4,766,482
- Issue date Aug 23, 1988
- General Electric Company
- Ronald K. Smeltzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-sapphire integrated circuit and method of making the same
- Patent number 4,751,554
- Issue date Jun 14, 1988
- RCA Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of laser soldering
- Patent number 4,733,039
- Issue date Mar 22, 1988
- General Electric Company
- George L. Schnable
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of forming alignment marks in sapphire
- Patent number 4,732,867
- Issue date Mar 22, 1988
- General Electric Company
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device passivated with phosphosilicate glass over sil...
- Patent number 4,668,973
- Issue date May 26, 1987
- RCA Corporation
- Robert H. Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a passivating composite comprising a silico...
- Patent number RE32351
- Issue date Feb 17, 1987
- RCA Corporation
- Robert H. Dawson
- 029 - Metal working
Information Patent Grant
Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing...
- Patent number 4,584,026
- Issue date Apr 22, 1986
- RCA Corporation
- Chung P. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric layers in multilayer refractory metallization structure
- Patent number 4,582,745
- Issue date Apr 15, 1986
- RCA Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor contacts by implanting ions of neut...
- Patent number 4,502,206
- Issue date Mar 5, 1985
- RCA Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device to improve conductivity of...
- Patent number 4,472,210
- Issue date Sep 18, 1984
- RCA Corporation
- Chung P. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped-oxide diffusion of phosphorus using borophosphosilicate glass
- Patent number 4,433,008
- Issue date Feb 21, 1984
- RCA Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching of phosphosilicate glass
- Patent number 4,395,304
- Issue date Jul 26, 1983
- RCA Corporation
- Werner Kern
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method of forming tapered contact holes for integrated circuit devices
- Patent number 4,363,830
- Issue date Dec 14, 1982
- RCA Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of detecting a cathodic corrosion site on a metallized subst...
- Patent number 4,278,508
- Issue date Jul 14, 1981
- RCA Corporation
- Lawrence K. White
- G01 - MEASURING TESTING
Information Patent Grant
Passivating composite for a semiconductor device comprising a silic...
- Patent number 4,273,805
- Issue date Jun 16, 1981
- RCA Corporation
- Robert H. Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride and silicon oxide etchant
- Patent number 4,269,654
- Issue date May 26, 1981
- RCA Corporation
- Cheryl A. Deckert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser rounding a sharp semiconductor projection
- Patent number 4,249,960
- Issue date Feb 10, 1981
- RCA Corporation
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for inspecting electrical devices
- Patent number 4,237,379
- Issue date Dec 2, 1980
- RCA Corporation
- Cheryl A. Deckert
- G01 - MEASURING TESTING
Information Patent Grant
Method of chemically vapor-depositing a low-stress glass layer
- Patent number 4,196,232
- Issue date Apr 1, 1980
- RCA Corporation
- George L. Schnable
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

George L. Schnable

Person

Patents Grantslast 30 patents

Method of edge doping SOI islands

Formation of thin-film resistors on silicon substrates

Semiconductor device and method of making the same

Silicon-on-sapphire integrated circuit and method of making the same

Method of laser soldering

Method of forming alignment marks in sapphire

Semiconductor device passivated with phosphosilicate glass over sil...

Method of manufacturing a passivating composite comprising a silico...

Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing...

Dielectric layers in multilayer refractory metallization structure

Method of forming semiconductor contacts by implanting ions of neut...

Method of making a semiconductor device to improve conductivity of...

Doped-oxide diffusion of phosphorus using borophosphosilicate glass

Selective etching of phosphosilicate glass

Method of forming tapered contact holes for integrated circuit devices

Method of detecting a cathodic corrosion site on a metallized subst...

Passivating composite for a semiconductor device comprising a silic...

Silicon nitride and silicon oxide etchant

Laser rounding a sharp semiconductor projection

Method for inspecting electrical devices

Method of chemically vapor-depositing a low-stress glass layer