Gerald Unegg

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Patents Grantslast 30 patents

Information Patent Grant
Forming a metal contact layer on silicon carbide and semiconductor...
- Patent number 10,256,097
- Issue date Apr 9, 2019
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 10,217,636
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 10,049,879
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 9,934,972
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon based contact structure for silicon carbide device technical...
- Patent number 9,917,170
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 9,666,482
- Issue date May 30, 2017
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20180204725
- Publication date Jul 19, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a Metal Contact Layer on Silicon Carbide and Semiconductor...
- Publication number 20180174840
- Publication date Jun 21, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self Aligned Silicon Carbide Contact Formation Using Protective Layer
- Publication number 20180076036
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Vacancy Defect Reduction Method for SiC
- Publication number 20170309484
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Mihai Draghici
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Based Contact Structure for Silicon Carbide Device Technical...
- Publication number 20170309720
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20170103894
- Publication date Apr 13, 2017
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS