Gerhard Miller

Person

Penzing, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a doped semiconductor layer
- Patent number 10,325,996
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with charge carrier lifetime reduction means
- Patent number 9,362,349
- Issue date Jun 7, 2016
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor component
- Patent number 7,233,031
- Issue date Jun 19, 2007
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component arrangement with a reduced oscillation tend...
- Patent number 7,023,086
- Issue date Apr 4, 2006
- Infineon Technologies AG
- Bernd Gutsmann
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Bipolar transistor which can be controlled by field effect and meth...
- Patent number 6,309,920
- Issue date Oct 30, 2001
- Siemens Aktiengesellschaft
- Thomas Laska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor module with terminal pins
- Patent number 5,753,971
- Issue date May 19, 1998
- Siemens Aktiengesellschaft
- Gerhard Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect controlled semiconductor component with integrated res...
- Patent number 5,726,474
- Issue date Mar 10, 1998
- Siemens Aktiengesellschaft
- Gerhard Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor structural element with four layers
- Patent number 4,951,110
- Issue date Aug 21, 1990
- Siemens Aktiengesellschaft
- Gerhard Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor controllable by field effect
- Patent number 4,893,165
- Issue date Jan 9, 1990
- Siemens Aktiengesellschaft
- Gerhard Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bridge arm with transistors and recovery diodes
- Patent number 4,816,984
- Issue date Mar 28, 1989
- Siemens Aktiengesellschaft
- Alfred Porst
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
Method for Producing a Doped Semiconductor Layer
- Publication number 20180061962
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Charge Carrier Lifetime Reduction Means
- Publication number 20140015007
- Publication date Jan 16, 2014
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Producing a Doped Semiconductor...
- Publication number 20140001514
- Publication date Jan 2, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component circuit with a reduced oscillation tendency
- Publication number 20050054147
- Publication date Mar 10, 2005
- Bernd Gustmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power semiconductor component
- Publication number 20050035405
- Publication date Feb 17, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Gerhard Miller

Person

Patents Grantslast 30 patents

Method for producing a doped semiconductor layer

Semiconductor device with charge carrier lifetime reduction means

Vertical power semiconductor component

Semiconductor component arrangement with a reduced oscillation tend...

Bipolar transistor which can be controlled by field effect and meth...

Power semiconductor module with terminal pins

Field effect controlled semiconductor component with integrated res...

Power semiconductor structural element with four layers

Bipolar transistor controllable by field effect

Bridge arm with transistors and recovery diodes

Patents Applicationslast 30 patents

Method for Producing a Doped Semiconductor Layer

Semiconductor Device with Charge Carrier Lifetime Reduction Means

Semiconductor Device and Method for Producing a Doped Semiconductor...

Semiconductor component circuit with a reduced oscillation tendency

Vertical power semiconductor component