Gerhard Prechtl

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People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,159,918
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 11,929,430
- Issue date Mar 12, 2024
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a bidirectional switch and discharge ci...
- Patent number 11,862,630
- Issue date Jan 2, 2024
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode transistor device
- Patent number 11,721,754
- Issue date Aug 8, 2023
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode Group III nitride-based transistor device
- Patent number 11,417,758
- Issue date Aug 16, 2022
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device and method of fabricating...
- Patent number 11,349,012
- Issue date May 31, 2022
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with doped semiconductor region i...
- Patent number 11,257,941
- Issue date Feb 22, 2022
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor having a buried field plate
- Patent number 11,114,554
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,600,710
- Issue date Mar 24, 2020
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an integrated heterojunction semiconductor device
- Patent number 10,573,568
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for depletion mode and enhancement mode transistors
- Patent number 10,411,008
- Issue date Sep 10, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming substrate structures and semiconductor components
- Patent number 10,388,736
- Issue date Aug 20, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active gate-source capacitance clamp for normally-off HEMT
- Patent number 10,326,441
- Issue date Jun 18, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical potential short in a periphery region...
- Patent number 10,304,923
- Issue date May 28, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped field plate and contact structures for semiconductor devices...
- Patent number 10,276,669
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Jens Ulrich Heinle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method
- Patent number 10,199,216
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 10,177,061
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor probe test card with integrated hall measurement feat...
- Patent number 10,126,355
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- G01 - MEASURING TESTING
Information Patent Grant
Non-planar normally off compound semiconductor device
- Patent number 10,090,406
- Issue date Oct 2, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interdigit device on leadframe for evenly distributed current flow
- Patent number 10,074,597
- Issue date Sep 11, 2018
- Infineon Technologies Austria AG
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lead frame connected with heterojunction semiconductor body
- Patent number 10,068,780
- Issue date Sep 4, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water and ion barrier for the periphery of III-V semiconductor dies
- Patent number 10,062,630
- Issue date Aug 28, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical potential short in the periphery region of a III-nitride s...
- Patent number 10,038,051
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with carrier injection mitigation...
- Patent number 10,038,085
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional normally-off III-V high electron mobility transistor...
- Patent number 9,960,157
- Issue date May 1, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Active gate-source capacitance clamp for normally-off HEMT
- Patent number 9,917,578
- Issue date Mar 13, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated heterojunction semiconductor device and method for produ...
- Patent number 9,887,139
- Issue date Feb 6, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,847,394
- Issue date Dec 19, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor having a multi-...
- Patent number 9,837,520
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride bidirectional device
- Patent number 9,837,522
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED SEMICONDUCTOR REGION I...
- Publication number 20240222488
- Publication date Jul 4, 2024
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...
- Publication number 20240072785
- Publication date Feb 29, 2024
- Infineon Technologies Austria AG
- Adrian Finney
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240030217
- Publication date Jan 25, 2024
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION
- Publication number 20230253486
- Publication date Aug 10, 2023
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WATER AND ION BARRIER FOR III-V SEMICONDUCTOR DEVICES
- Publication number 20230163209
- Publication date May 25, 2023
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE TRANSISTOR DEVICE
- Publication number 20220344501
- Publication date Oct 27, 2022
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device
- Publication number 20220271147
- Publication date Aug 25, 2022
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Doped Semiconductor Region i...
- Publication number 20220123138
- Publication date Apr 21, 2022
- Infineon Technologies Austria AG
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Doped Semiconductor Region i...
- Publication number 20210234028
- Publication date Jul 29, 2021
- Thomas Detzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode Group III Nitride-Based Transistor Device
- Publication number 20210050439
- Publication date Feb 18, 2021
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit and Bipolar Transistor
- Publication number 20210050434
- Publication date Feb 18, 2021
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device and Method of Fabricating...
- Publication number 20200321447
- Publication date Oct 8, 2020
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Bidirectional Switch and Discharge Ci...
- Publication number 20190326280
- Publication date Oct 24, 2019
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20190096779
- Publication date Mar 28, 2019
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Probe Test Card with Integrated Hall Measurement Feat...
- Publication number 20180328981
- Publication date Nov 15, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- G01 - MEASURING TESTING
Information Patent Application
Method of Forming a Vertical Potential Short in a Periphery Region...
- Publication number 20180331175
- Publication date Nov 15, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bidirectional Normally-Off III-V Devices and Circuits
- Publication number 20180219008
- Publication date Aug 2, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERDIGIT DEVICE ON LEADFRAME FOR EVENLY DISTRIBUTED CURRENT FLOW
- Publication number 20180211904
- Publication date Jul 26, 2018
- Infineon Technologies Americas Corp.
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sloped Field Plate and Contact Structures for Semiconductor Devices...
- Publication number 20180204915
- Publication date Jul 19, 2018
- Infineon Technologies Austria AG
- Jens Ulrich Heinle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active Gate-Source Capacitance Clamp for Normally-Off HEMT
- Publication number 20180159528
- Publication date Jun 7, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Substrate Structures and Semiconductor Components
- Publication number 20180047813
- Publication date Feb 15, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Electron-Mobility Transistor Having a Buried Field Plate
- Publication number 20170365702
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing an Integrated Heterojunction Semiconductor Device
- Publication number 20170365520
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD
- Publication number 20170271454
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active Gate-Source Capacitance Clamp for Normally-Off HEMT
- Publication number 20170244407
- Publication date Aug 24, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Potential Short in the Periphery Region of a III-Nitride S...
- Publication number 20170243936
- Publication date Aug 24, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Carrier Injection Mitigation...
- Publication number 20170200817
- Publication date Jul 13, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Water and Ion Barrier for the Periphery of III-V Semiconductor Dies
- Publication number 20170194230
- Publication date Jul 6, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and method
- Publication number 20170186600
- Publication date Jun 29, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Bidirectional Device
- Publication number 20170125562
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS

Gerhard Prechtl

Person

Patents Grantslast 30 patents

Group III nitride-based transistor device

High electron mobility transistor with doped semiconductor region i...

Semiconductor device having a bidirectional switch and discharge ci...

Enhancement mode transistor device

Enhancement mode Group III nitride-based transistor device

Group III nitride-based transistor device and method of fabricating...

High electron mobility transistor with doped semiconductor region i...

High-electron-mobility transistor having a buried field plate

Semiconductor device

Method for producing an integrated heterojunction semiconductor device

System and method for depletion mode and enhancement mode transistors

Methods of forming substrate structures and semiconductor components

Active gate-source capacitance clamp for normally-off HEMT

Method of forming a vertical potential short in a periphery region...

Sloped field plate and contact structures for semiconductor devices...

Semiconductor wafer and method

Semiconductor device

Semiconductor probe test card with integrated hall measurement feat...

Non-planar normally off compound semiconductor device

Interdigit device on leadframe for evenly distributed current flow

Lead frame connected with heterojunction semiconductor body

Water and ion barrier for the periphery of III-V semiconductor dies

Vertical potential short in the periphery region of a III-nitride s...

High electron mobility transistor with carrier injection mitigation...

Bidirectional normally-off III-V high electron mobility transistor...

Active gate-source capacitance clamp for normally-off HEMT

Integrated heterojunction semiconductor device and method for produ...

Semiconductor device

Group III-nitride-based enhancement mode transistor having a multi-...

III-nitride bidirectional device

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED SEMICONDUCTOR REGION I...

ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE AND A CLAMP CIRCUIT AND...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION

WATER AND ION BARRIER FOR III-V SEMICONDUCTOR DEVICES

ENHANCEMENT MODE TRANSISTOR DEVICE

Group III Nitride-Based Transistor Device

High Electron Mobility Transistor with Doped Semiconductor Region i...

High Electron Mobility Transistor with Doped Semiconductor Region i...

Enhancement Mode Group III Nitride-Based Transistor Device

Integrated Circuit and Bipolar Transistor

Group III Nitride-Based Transistor Device and Method of Fabricating...

Semiconductor Device Having a Bidirectional Switch and Discharge Ci...

Semiconductor Device

Semiconductor Probe Test Card with Integrated Hall Measurement Feat...

Method of Forming a Vertical Potential Short in a Periphery Region...

Bidirectional Normally-Off III-V Devices and Circuits

INTERDIGIT DEVICE ON LEADFRAME FOR EVENLY DISTRIBUTED CURRENT FLOW

Sloped Field Plate and Contact Structures for Semiconductor Devices...

Active Gate-Source Capacitance Clamp for Normally-Off HEMT

Methods of Forming Substrate Structures and Semiconductor Components

High-Electron-Mobility Transistor Having a Buried Field Plate

Method for Producing an Integrated Heterojunction Semiconductor Device

SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD

Active Gate-Source Capacitance Clamp for Normally-Off HEMT

Vertical Potential Short in the Periphery Region of a III-Nitride S...

High Electron Mobility Transistor with Carrier Injection Mitigation...

Water and Ion Barrier for the Periphery of III-V Semiconductor Dies

Semiconductor wafer and method

III-Nitride Bidirectional Device