Gerrit Jan Hemink

Person

San Ramon, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semi-circle drain side select gate maintenance by selective semi-ci...
- Patent number 11,894,062
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Quick pass write programming techniques in a memory device
- Patent number 11,887,677
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Program dependent biasing of unselected sub-blocks
- Patent number 11,798,625
- Issue date Oct 24, 2023
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with sub-block based self-boosting scheme
- Patent number 11,688,469
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Reliability compensation for uneven NAND block degradation
- Patent number 11,646,081
- Issue date May 9, 2023
- SanDisk Technologies LLC
- Xiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming memory cells with concurrent redundant storage of data...
- Patent number 11,625,172
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Programming memory cells with concurrent storage of multi-level dat...
- Patent number 11,551,781
- Issue date Jan 10, 2023
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 11,545,221
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Vector matrix multiplication with 3D NAND
- Patent number 11,397,790
- Issue date Jul 26, 2022
- SanDisk Technologies LLC
- Federico Nardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 11,342,028
- Issue date May 24, 2022
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Realization of binary neural networks in NAND memory arrays
- Patent number 11,328,204
- Issue date May 10, 2022
- SanDisk Technologies LLC
- Won Ho Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,101,326
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,088,206
- Issue date Aug 10, 2021
- SanDisk Tehnologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with countermeasure for over programming
- Patent number 11,081,198
- Issue date Aug 3, 2021
- SanDisk Technologies LLC
- Xiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit line voltage control for damping memory programming
- Patent number 11,011,242
- Issue date May 18, 2021
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming to minimize cross-temperature threshold voltage widening
- Patent number 10,978,145
- Issue date Apr 13, 2021
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Concurrent programming of multiple cells for non-volatile memory de...
- Patent number 10,978,156
- Issue date Apr 13, 2021
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Leaky memory hole repair at fabrication joint
- Patent number 10,910,083
- Issue date Feb 2, 2021
- Western Digital Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with countermeasure for over programming
- Patent number 10,839,928
- Issue date Nov 17, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
State adaptive predictive programming
- Patent number 10,748,622
- Issue date Aug 18, 2020
- SanDisk Technologies LLC
- Lei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit line voltage control for damping memory programming
- Patent number 10,643,720
- Issue date May 5, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Source voltage modulated reads in non-volatile memories
- Patent number 10,573,395
- Issue date Feb 25, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Single pulse verification of memory cells
- Patent number 10,535,412
- Issue date Jan 14, 2020
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state phase change memory device with vertical cross-point st...
- Patent number 10,374,014
- Issue date Aug 6, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase speed based word line control
- Patent number 10,304,551
- Issue date May 28, 2019
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state and confined phase change memory with vertical cross-po...
- Patent number 10,262,730
- Issue date Apr 16, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell current based bit line voltage
- Patent number 10,008,273
- Issue date Jun 26, 2018
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
State-dependent read compensation
- Patent number 9,805,809
- Issue date Oct 31, 2017
- SanDisk Technologies LLC
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Smart verify for programming non-volatile memory
- Patent number 9,564,226
- Issue date Feb 7, 2017
- SanDisk Technologies LLC
- Mohan Dunga
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line dependent programming in a memory device
- Patent number 9,548,124
- Issue date Jan 17, 2017
- SanDisk Technologies LLC
- Arash Hazeghi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
QUICK PASS WRITE PROGRAMMING TECHNIQUES IN A MEMORY DEVICE
- Publication number 20230307072
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM DEPENDENT BIASING OF UNSELECTED SUB-BLOCKS
- Publication number 20230076245
- Publication date Mar 9, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SUB-BLOCK BASED SELF-BOOSTING SCHEME
- Publication number 20230050955
- Publication date Feb 16, 2023
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CI...
- Publication number 20230046677
- Publication date Feb 16, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
RELIABILITY COMPENSATION FOR UNEVEN NAND BLOCK DEGRADATION
- Publication number 20230041476
- Publication date Feb 9, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING MEMORY CELLS WITH CONCURRENT REDUNDANT STORAGE OF DATA...
- Publication number 20220404989
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING MEMORY CELLS WITH CONCURRENT STORAGE OF MULTI-LEVEL DAT...
- Publication number 20220406398
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20210358553
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20210233589
- Publication date Jul 29, 2021
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TO MINIMIZE CROSS-TEMPERATURE THRESHOLD VOLTAGE WIDENING
- Publication number 20210050054
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
VECTOR MATRIX MULTIPLICATION WITH 3D NAND
- Publication number 20200410037
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR OVER PROGRAMMING
- Publication number 20200365221
- Publication date Nov 19, 2020
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR OVER PROGRAMMING
- Publication number 20200365220
- Publication date Nov 19, 2020
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS
- Publication number 20200311512
- Publication date Oct 1, 2020
- SANDISK TECHNOLOGIES LLC
- Won Ho Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20200303459
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKY MEMORY HOLE REPAIR AT FABRICATION JOINT
- Publication number 20200294615
- Publication date Sep 17, 2020
- Western Digital Technologies, Inc.
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
STATE ADAPTIVE PREDICTIVE PROGRAMMING
- Publication number 20200234768
- Publication date Jul 23, 2020
- SANDISK TECHNOLOGIES LLC
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE VOLTAGE CONTROL FOR DAMPING MEMORY PROGRAMMING
- Publication number 20200227125
- Publication date Jul 16, 2020
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS
- Publication number 20200034697
- Publication date Jan 30, 2020
- SANDISK TECHNOLOGIES LLC
- Won Ho Choi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...
- Publication number 20200005871
- Publication date Jan 2, 2020
- SanDisk Technologies LLC
- Xiang YANG
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE VOLTAGE CONTROL FOR DAMPING MEMORY PROGRAMMING
- Publication number 20190362799
- Publication date Nov 28, 2019
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE PULSE VERIFICATION OF MEMORY CELLS
- Publication number 20190252030
- Publication date Aug 15, 2019
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE AND CONFINED PHASE CHANGE MEMORY WITH VERTICAL CROSS-PO...
- Publication number 20190115071
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE PHASE CHANGE MEMORY DEVICE WITH VERTICAL CROSS-POINT ST...
- Publication number 20190115072
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20190115391
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERASE SPEED BASED WORD LINE CONTROL
- Publication number 20170372789
- Publication date Dec 28, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
CELL CURRENT BASED BIT LINE VOLTAGE
- Publication number 20170358365
- Publication date Dec 14, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE DEPENDENT TWO STROBE SENSING MODE FOR NONVOLATILE STORAGE...
- Publication number 20160118134
- Publication date Apr 28, 2016
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-STROBE SENSING FOR NONVOLATILE STORAGE
- Publication number 20160118135
- Publication date Apr 28, 2016
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods for Lower Page Writes
- Publication number 20150332759
- Publication date Nov 19, 2015
- SANDISK TECHNOLOGIES INC.
- Jianmin Huang
- G11 - INFORMATION STORAGE

Gerrit Jan Hemink

Person

Patents Grantslast 30 patents

Semi-circle drain side select gate maintenance by selective semi-ci...

Quick pass write programming techniques in a memory device

Program dependent biasing of unselected sub-blocks

Non-volatile memory with sub-block based self-boosting scheme

Reliability compensation for uneven NAND block degradation

Programming memory cells with concurrent redundant storage of data...

Programming memory cells with concurrent storage of multi-level dat...

Concurrent programming of multiple cells for non-volatile memory de...

Vector matrix multiplication with 3D NAND

Concurrent programming of multiple cells for non-volatile memory de...

Realization of binary neural networks in NAND memory arrays

Methods of forming a phase change memory with vertical cross-point...

Methods of forming a phase change memory with vertical cross-point...

Non-volatile memory with countermeasure for over programming

Bit line voltage control for damping memory programming

Programming to minimize cross-temperature threshold voltage widening

Concurrent programming of multiple cells for non-volatile memory de...

Leaky memory hole repair at fabrication joint

Non-volatile memory with countermeasure for over programming

State adaptive predictive programming

Bit line voltage control for damping memory programming

Source voltage modulated reads in non-volatile memories

Single pulse verification of memory cells

Multi-state phase change memory device with vertical cross-point st...

Erase speed based word line control

Multi-state and confined phase change memory with vertical cross-po...

Cell current based bit line voltage

State-dependent read compensation

Smart verify for programming non-volatile memory

Word line dependent programming in a memory device

Patents Applicationslast 30 patents

QUICK PASS WRITE PROGRAMMING TECHNIQUES IN A MEMORY DEVICE

PROGRAM DEPENDENT BIASING OF UNSELECTED SUB-BLOCKS

NON-VOLATILE MEMORY WITH SUB-BLOCK BASED SELF-BOOSTING SCHEME

SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CI...

RELIABILITY COMPENSATION FOR UNEVEN NAND BLOCK DEGRADATION

PROGRAMMING MEMORY CELLS WITH CONCURRENT REDUNDANT STORAGE OF DATA...

PROGRAMMING MEMORY CELLS WITH CONCURRENT STORAGE OF MULTI-LEVEL DAT...

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

PROGRAMMING TO MINIMIZE CROSS-TEMPERATURE THRESHOLD VOLTAGE WIDENING

VECTOR MATRIX MULTIPLICATION WITH 3D NAND

NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR OVER PROGRAMMING

NON-VOLATILE MEMORY WITH COUNTERMEASURE FOR OVER PROGRAMMING

REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

LEAKY MEMORY HOLE REPAIR AT FABRICATION JOINT

STATE ADAPTIVE PREDICTIVE PROGRAMMING

BIT LINE VOLTAGE CONTROL FOR DAMPING MEMORY PROGRAMMING

REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS

CONCURRENT PROGRAMMING OF MULTIPLE CELLS FOR NON-VOLATILE MEMORY DE...

BIT LINE VOLTAGE CONTROL FOR DAMPING MEMORY PROGRAMMING

SINGLE PULSE VERIFICATION OF MEMORY CELLS

MULTI-STATE AND CONFINED PHASE CHANGE MEMORY WITH VERTICAL CROSS-PO...

MULTI-STATE PHASE CHANGE MEMORY DEVICE WITH VERTICAL CROSS-POINT ST...

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

ERASE SPEED BASED WORD LINE CONTROL

CELL CURRENT BASED BIT LINE VOLTAGE

WORD LINE DEPENDENT TWO STROBE SENSING MODE FOR NONVOLATILE STORAGE...

TWO-STROBE SENSING FOR NONVOLATILE STORAGE

Systems and Methods for Lower Page Writes