Gert J. Leusink

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration of ALD barrier layer and CVD Ru liner for void-free Cu...
- Patent number 9,607,888
- Issue date Mar 28, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structures and techniques for atomic layer deposition
- Patent number 8,722,548
- Issue date May 13, 2014
- International Business Machines Corporation
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-temperature dielectric formation for devices with strained germ...
- Patent number 8,580,034
- Issue date Nov 12, 2013
- Tokyo Electron Limited
- Gert Leusink
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for monitoring status of system components
- Patent number 8,460,945
- Issue date Jun 11, 2013
- Tokyo Electron Limited
- David L. O'Meara
- G01 - MEASURING TESTING
Information Patent Grant
UV-assisted dielectric formation for devices with strained germaniu...
- Patent number 8,168,548
- Issue date May 1, 2012
- Tokyo Electron Limited
- Gert Leusink
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of integrating metal-containing films into semiconductor dev...
- Patent number 7,674,710
- Issue date Mar 9, 2010
- Tokyo Electron Limited
- Shigeo Ashigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and processing system for monitoring status of system compon...
- Patent number 7,479,454
- Issue date Jan 20, 2009
- Tokyo Electron Limited
- David L. O'Meara
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for processing a substrate
- Patent number 7,419,702
- Issue date Sep 2, 2008
- Tokyo Electron Limited
- Kazuhito Nakamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 7,393,761
- Issue date Jul 1, 2008
- Tokyo Electron Limited
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for increasing tensile stress in a thin film usin...
- Patent number 7,300,891
- Issue date Nov 27, 2007
- Tokyo Electron, Ltd.
- Igeta Masonobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and system for increasing tensile stress in a thin film usin...
- Patent number 7,265,066
- Issue date Sep 4, 2007
- Tokyo Electron, Ltd.
- Igeta Masonobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a passivated metal layer
- Patent number 7,189,431
- Issue date Mar 13, 2007
- Tokyo Electron Limited
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing metal layers from metal-carbonyl precursors
- Patent number 7,078,341
- Issue date Jul 18, 2006
- Tokyo Electron Limited
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a tantalum-containing gate electrode structure
- Patent number 7,067,422
- Issue date Jun 27, 2006
- Tokyo Electron Limited
- Kazuhito Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for removing material from chamber and wafer s...
- Patent number 6,992,011
- Issue date Jan 31, 2006
- Tokyo Electron Limited
- Takenao Nemoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-pressure deposition of metal layers from metal-carbonyl precursors
- Patent number 6,989,321
- Issue date Jan 24, 2006
- Tokyo Electron Limited
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a metal layer using an intermittent precursor gas...
- Patent number 6,924,223
- Issue date Aug 2, 2005
- Tokyo Electron Limited
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for characterizing the performance of an electrostatic chuck
- Patent number 6,853,953
- Issue date Feb 8, 2005
- Tokyo Electron Limited
- Jozef Brcka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of passivating and stabilizing a Ti-PECVD process chamber an...
- Patent number 6,635,569
- Issue date Oct 21, 2003
- Tokyo Electron Limited
- Michael S. Ameen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN waf...
- Patent number 5,926,737
- Issue date Jul 20, 1999
- Tokyo Electron Limited
- Michael S. Ameen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...
- Publication number 20150221550
- Publication date Aug 6, 2015
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures And Techniques For Atomic Layer Deposition
- Publication number 20120074533
- Publication date Mar 29, 2012
- Tokyo Electron (TEL)Limited
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF INTEGRATING METAL-CONTAINING FILMS INTO SEMICONDUCTOR DEV...
- Publication number 20080119033
- Publication date May 22, 2008
- TOKYO ELECTRON LIMITED
- Shigeo Ashigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UV-assisted dielectric formation for devices with strained germaniu...
- Publication number 20080078987
- Publication date Apr 3, 2008
- TOKYO ELECTRON LIMITED
- Gert Leusink
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Low-temperature dielectric formation for devices with strained germ...
- Publication number 20070238268
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Gert Leusink
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for increasing tensile stress in a thin film usin...
- Publication number 20060226518
- Publication date Oct 12, 2006
- Igeta Masanobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for increasing tensile stress in a thin film usin...
- Publication number 20060226519
- Publication date Oct 12, 2006
- Igeta Masonobu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating a semiconductor device
- Publication number 20060172474
- Publication date Aug 3, 2006
- TOKYO ELECTRON LIMITED
- Cory Wajda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-pressure deposition of ruthenium and rhenium metal layers from...
- Publication number 20060068588
- Publication date Mar 30, 2006
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A PASSIVATED METAL LAYER
- Publication number 20060068097
- Publication date Mar 30, 2006
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition of ruthenium metal layers in a thermal chemical vapor de...
- Publication number 20060068098
- Publication date Mar 30, 2006
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a tantalum-containing gate electrode structure
- Publication number 20050227441
- Publication date Oct 13, 2005
- TOKYO ELECTRON LIMITED
- Kazuhito Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for processing a substrate
- Publication number 20050221002
- Publication date Oct 6, 2005
- TOKYO ELECTRON LIMITED
- Kazuhito Nakamura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of depositing metal layers from metal-carbonyl precursors
- Publication number 20050079708
- Publication date Apr 14, 2005
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and processing system for monitoring status of system compon...
- Publication number 20050070104
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Low-pressure deposition of metal layers from metal-carbonyl precursors
- Publication number 20050070100
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a metal layer using an intermittent precursor gas...
- Publication number 20050069632
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- Hideaki Yamasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for depositing metal layers using sequential flow deposition
- Publication number 20050069641
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- Tsukasa Matsuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for monitoring status of system components
- Publication number 20050068519
- Publication date Mar 31, 2005
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- G01 - MEASURING TESTING
Information Patent Application
Method and apparatus for removing material from chamber and wafer s...
- Publication number 20040137750
- Publication date Jul 15, 2004
- TOKYO ELECTRON LIMITED
- Takenao Nemoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for characterizing the performance of an electrostatic chuck
- Publication number 20030033116
- Publication date Feb 13, 2003
- Tokyo Electron Limited of TBS Broadcast Center
- Jozef Brcka
- H01 - BASIC ELECTRIC ELEMENTS

Gert J. Leusink

Person

Patents Grantslast 30 patents

Integration of ALD barrier layer and CVD Ru liner for void-free Cu...

Structures and techniques for atomic layer deposition

Low-temperature dielectric formation for devices with strained germ...

Method for monitoring status of system components

UV-assisted dielectric formation for devices with strained germaniu...

Method of integrating metal-containing films into semiconductor dev...

Method and processing system for monitoring status of system compon...

Method for processing a substrate

Method for fabricating a semiconductor device

Method and system for increasing tensile stress in a thin film usin...

Method and system for increasing tensile stress in a thin film usin...

Method for forming a passivated metal layer

Method of depositing metal layers from metal-carbonyl precursors

Method of forming a tantalum-containing gate electrode structure

Method and apparatus for removing material from chamber and wafer s...

Low-pressure deposition of metal layers from metal-carbonyl precursors

Method of forming a metal layer using an intermittent precursor gas...

Method for characterizing the performance of an electrostatic chuck

Method of passivating and stabilizing a Ti-PECVD process chamber an...

Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN waf...

Patents Applicationslast 30 patents

INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...

Structures And Techniques For Atomic Layer Deposition

METHOD OF INTEGRATING METAL-CONTAINING FILMS INTO SEMICONDUCTOR DEV...

UV-assisted dielectric formation for devices with strained germaniu...

Low-temperature dielectric formation for devices with strained germ...

Method and system for increasing tensile stress in a thin film usin...

Method and system for increasing tensile stress in a thin film usin...

Method for fabricating a semiconductor device

Low-pressure deposition of ruthenium and rhenium metal layers from...

METHOD FOR FORMING A PASSIVATED METAL LAYER

Deposition of ruthenium metal layers in a thermal chemical vapor de...

Method of forming a tantalum-containing gate electrode structure

Method for processing a substrate

Method of depositing metal layers from metal-carbonyl precursors

Method and processing system for monitoring status of system compon...

Low-pressure deposition of metal layers from metal-carbonyl precursors

Method of forming a metal layer using an intermittent precursor gas...

Method for depositing metal layers using sequential flow deposition

Method for monitoring status of system components

Method and apparatus for removing material from chamber and wafer s...

Method for characterizing the performance of an electrostatic chuck