Gilyong Chung

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Tampa, FL, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing substrates having improved carrier lifetimes
- Patent number 9,337,027
- Issue date May 10, 2016
- Dow Corning Corporation
- Gilyong Chung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High voltage power semiconductor device on SiC
- Patent number 9,337,277
- Issue date May 10, 2016
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power semiconductor devices on SiC
- Patent number 8,860,040
- Issue date Oct 14, 2014
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,727,340
- Issue date Jun 1, 2010
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,235,438
- Issue date Jun 26, 2007
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide intera...
- Patent number 6,939,756
- Issue date Sep 6, 2005
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE POWER SEMICONDUCTOR DEVICE ON SIC
- Publication number 20150333125
- Publication date Nov 19, 2015
- Dow Corning Corporation
- Mark LOBODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Substrates Having Improved Carrier Lifetimes
- Publication number 20140203297
- Publication date Jul 24, 2014
- Dow Corning Corporation
- Gilyong Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES ON SIC
- Publication number 20140070234
- Publication date Mar 13, 2014
- Dow Corning Corporation
- Mark LOBODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Substrates Having Improved Carrier Lifetimes
- Publication number 20100006859
- Publication date Jan 14, 2010
- Gilyong Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20080128709
- Publication date Jun 5, 2008
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20060024978
- Publication date Feb 2, 2006
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS